Christophe Durand
Christophe Durand
Asso. Professor-HDR, Université Grenoble Alpes, CEA, IRIG, PHELIQS-NPSC
Bestätigte E-Mail-Adresse bei
Zitiert von
Zitiert von
Self-assembled growth of catalyst-free GaN wires by metal–organic vapour phase epitaxy
R Köster, JS Hwang, C Durand, DLS Dang, J Eymery
Nanotechnology 21 (1), 015602, 2009
M-plane core–shell InGaN/GaN multiple-quantum-wells on GaN wires for electroluminescent devices
R Koester, JS Hwang, D Salomon, X Chen, C Bougerol, JP Barnes, ...
Nano letters 11 (11), 4839-4845, 2011
Flexible light-emitting diodes based on vertical nitride nanowires
X Dai, A Messanvi, H Zhang, C Durand, J Eymery, C Bougerol, FH Julien, ...
Nano letters 15 (10), 6958-6964, 2015
Integrated photonic platform based on InGaN/GaN nanowire emitters and detectors
M Tchernycheva, A Messanvi, A de Luna Bugallo, G Jacopin, P Lavenus, ...
Nano letters 14 (6), 3515-3520, 2014
Homoepitaxial growth of catalyst-free GaN wires on N-polar substrates
XJ Chen, G Perillat-Merceroz, D Sam-Giao, C Durand, J Eymery
Applied Physics Letters 97 (15), 2010
Composition of wide bandgap semiconductor materials and nanostructures measured by atom probe tomography and its dependence on the surface electric field
L Mancini, N Amirifar, D Shinde, I Blum, M Gilbert, A Vella, F Vurpillot, ...
The Journal of Physical Chemistry C 118 (41), 24136-24151, 2014
Flexible white light emitting diodes based on nitride nanowires and nanophosphors
N Guan, X Dai, A Messanvi, H Zhang, J Yan, E Gautier, C Bougerol, ...
ACS photonics 3 (4), 597-603, 2016
Flexible photodiodes based on nitride core/shell p–n junction nanowires
H Zhang, X Dai, N Guan, A Messanvi, V Neplokh, V Piazza, M Vallo, ...
ACS applied materials & interfaces 8 (39), 26198-26206, 2016
Effect of the quantum well thickness on the performance of InGaN photovoltaic cells
L Redaelli, A Mukhtarova, S Valdueza-Felip, A Ajay, C Bougerol, ...
Applied Physics Letters 105 (13), 2014
Photoluminescent silicon nanocrystals synthesized by reactive laser ablation
D Riabinina, C Durand, M Chaker, F Rosei
Applied physics letters 88 (7), 2006
Correlation of microphotoluminescence spectroscopy, scanning transmission electron microscopy, and atom probe tomography on a single nano-object containing an InGaN/GaN …
L Rigutti, I Blum, D Shinde, D Hernández-Maldonado, W Lefebvre, ...
Nano letters 14 (1), 107-114, 2014
Single-wire photodetectors based on InGaN/GaN radial quantum wells in GaN wires grown by catalyst-free metal-organic vapor phase epitaxy
A Bugallo, L Rigutti, G Jacopin, FH Julien, C Durand, XJ Chen, ...
Applied Physics Letters 98 (23), 2011
Single-wire light-emitting diodes based on GaN wires containing both polar and nonpolar InGaN/GaN quantum wells
G Jacopin, ADL Bugallo, P Lavenus, L Rigutti, FH Julien, LF Zagonel, ...
Applied Physics Express 5 (1), 014101, 2011
Nucleation and growth of Si nanocrystals in an amorphous Si O 2 matrix
D Riabinina, C Durand, J Margot, M Chaker, GA Botton, F Rosei
Physical Review B 74 (7), 075334, 2006
Microstructure and electrical characterizations of yttrium oxide and yttrium silicate thin films deposited by pulsed liquid-injection plasma-enhanced metal-organic chemical …
C Durand, C Dubourdieu, C Vallée, V Loup, M Bonvalot, O Joubert, ...
Journal of applied physics 96 (3), 1719-1729, 2004
Light emitting diodes based on GaN core/shell wires grown by MOVPE on n-type Si substrate
AL Bavencove, D Salomon, M Lafossas, B Martin, A Dussaigne, F Levy, ...
Electronics letters 47 (13), 765-767, 2011
A novel approach to the synthesis of photoluminescent germanium nanoparticles by reactive laser ablation
D Riabinina, C Durand, M Chaker, N Rowell, F Rosei
Nanotechnology 17 (9), 2152, 2006
M-Plane GaN/InAlN Multiple Quantum Wells in Core–Shell Wire Structure for UV Emission
C Durand, C Bougerol, JF Carlin, G Rossbach, F Godel, J Eymery, ...
ACS photonics 1 (1), 38-46, 2014
Experimental and theoretical analysis of transport properties of core–shell wire light emitting diodes probed by electron beam induced current microscopy
P Lavenus, A Messanvi, L Rigutti, ADL Bugallo, H Zhang, F Bayle, ...
Nanotechnology 25 (25), 255201, 2014
Catalyst-free growth of high-optical quality GaN nanowires by metal-organic vapor phase epitaxy
XJ Chen, B Gayral, D Sam-Giao, C Bougerol, C Durand, J Eymery
Applied Physics Letters 99 (25), 2011
Das System kann den Vorgang jetzt nicht ausführen. Versuchen Sie es später erneut.
Artikel 1–20