Arnab Bhattacharya

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A Azizur RahmanScientific Officer, Tata Institute of Fundamental ResearchBestätigte E-Mail-Adresse bei tifr.res.in
LUKE MAWSTUniversity of WisconsinBestätigte E-Mail-Adresse bei wisc.edu
D. BotezPhilip Dunham Reed Professor, University of Wisconsin-MadisonBestätigte E-Mail-Adresse bei engr.wisc.edu
Brij Mohan AroraVisiting Professor , Indian Institute of Technology BombayBestätigte E-Mail-Adresse bei ee.iitb.ac.in
Kadir AbdulSingapore-MIT Alliance for Research and TechnologyBestätigte E-Mail-Adresse bei smart.mit.edu
Nirupam HatuiUC Santa BarbaraBestätigte E-Mail-Adresse bei ucsb.edu
Mandar M. DeshmukhCondensed Matter Physics and Materials Science, TIFR, Mumbai 400005 IndiaBestätigte E-Mail-Adresse bei tifr.res.in
Amit P ShahDCMP & MS, Tata Institute of Fundamental ResearchBestätigte E-Mail-Adresse bei tifr.res.in
Arumugam ThamizhavelProfessor, Tata Institute of Fundamental Research, Colaba, Mumbai, IndiaBestätigte E-Mail-Adresse bei tifr.res.in
Mahesh GokhaleDCMP & MS Tata Institute of Fundamental ResearchBestätigte E-Mail-Adresse bei tifr.res.in
Masihhur LaskarUniversity of Wisconsin-MadisonBestätigte E-Mail-Adresse bei wisc.edu
Priti GuptaCrayoNano ASBestätigte E-Mail-Adresse bei crayonano.com
Markus WeyersDept. Head Materials Technology, Ferdinand-Braun-InstitutBestätigte E-Mail-Adresse bei fbh-berlin.de
Sajal DharaAssistant ProfessorBestätigte E-Mail-Adresse bei phy.iitkgp.ernet.in
Emroj HossainVisicon Power ElectronicsBestätigte E-Mail-Adresse bei visiconpower.com
Bhakti JariwalaPostdoc FellowBestätigte E-Mail-Adresse bei psu.edu
Carina B MaliakkalKarlsruhe Institute of TechnologyBestätigte E-Mail-Adresse bei kit.edu
Sandip GhoshTata Institute of Fundamental ResearchBestätigte E-Mail-Adresse bei tifr.res.in
Vibhor SinghIndian Institute of Science, BangaloreBestätigte E-Mail-Adresse bei iisc.ac.in
Ashish AroraAssistant Professor, IISER Pune (ResID AAN-2736-2020)Bestätigte E-Mail-Adresse bei iiserpune.ac.in

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Arnab Bhattacharya

Professor, Dept. of CMPMS, Tata Institute of Fundamental Research

Bestätigte E-Mail-Adresse bei tifr.res.in - Startseite

Semiconductors epitaxial growth nitrides 2D layered materials Science education


Titel Nach Zitationen sortieren Nach Jahr sortieren Nach Titel sortieren	Zitiert von Zitiert von	Jahr
Gate Leakage Mechanisms in AlGaN/GaN and AlInN/GaN HEMTs: Comparison and Modeling S Turuvekere, N Karumuri, AA Rahman, A Bhattacharya, A DasGupta, ... IEEE Transactions on Electron Devices 60 (10), 3157-3165, 2013	281	2013
8 W continuous wave front‐facet power from broad‐waveguide Al‐free 980 nm diode lasers LJ Mawst, A Bhattacharya, J Lopez, D Botez, DZ Garbuzov, L DeMarco, ... Applied Physics Letters 69 (11), 1532-1534, 1996	243	1996
8 W continuous wave front‐facet power from broad‐waveguide Al‐free 980 nm diode lasers LJ Mawst, A Bhattacharya, J Lopez, D Botez, DZ Garbuzov, L DeMarco, ... Applied physics letters 69 (11), 1532-1534, 1996	241	1996
Synthesis and characterization of ReS2 and ReSe2 layered chalcogenide single crystals AB Bhakti Jariwala, Damien Voiry, Apoorv Jindal, Bhagyashree A Chalke ... Chemistry of Materials, 10.1021/acs.chemmater.6b00364, 2016	224*	2016
Highly Anisotropic in-Plane Excitons in Atomically Thin and Bulklike 1T′-ReSe₂ A Arora, J Noky, M Drüppel, B Jariwala, T Deilmann, R Schneider, ... Nano letters 17 (5), 3202-3207, 2017	163	2017
66% CW wallplug efficiency from Al-free 0.98 μm-emitting diode lasers D Botez, LJ Mawst, A Bhattacharya, J Lopez, J Li, TF Kuech, VP Iakovlev, ... Electronics Letters 32 (21), 2012-2013, 1996	123	1996
A facile process for soak-and-peel delamination of CVD graphene from substrates using water P Gupta, PD Dongare, S Grover, S Dubey, H Mamgain, A Bhattacharya, ... Scientific reports 4 (1), 3882, 2014	119	2014
Layered transition metal dichalcogenides: promising near-lattice-matched substrates for GaN growth P Gupta, AA Rahman, S Subramanian, S Gupta, A Thamizhavel, T Orlova, ... Scientific Reports 6, 23708, 2016	113	2016
Magnetotransport properties of individual InAs nanowires S Dhara, HS Solanki, V Singh, A Narayanan, P Chaudhari, M Gokhale, ... Physical Review B 79 (12), 121311, 2009	105	2009
Recharging and rejuvenation of decontaminated N95 masks E Hossain, S Bhadra, H Jain, S Das, A Bhattacharya, S Ghosh, D Levine Physics of Fluids 32 (9), 093304, 2020	102	2020
MOVPE growth of semipolar III-nitride semiconductors on CVD graphene P Gupta, AA Rahman, N Hatui, MR Gokhale, MM Deshmukh, ... Journal of Crystal Growth 372, 105-108, 2013	93	2013
Correlation of InGaP (001) surface structure during growth and bulk ordering M Zorn, P Kurpas, AI Shkrebtii, B Junno, A Bhattacharya, K Knorr, ... Physical Review B 60 (11), 8185, 1999	85	1999
Nanostructured MoS2/BiVO4 Composites for Energy Storage Applications Y Arora, AP Shah, S Battu, CB Maliakkal, S Haram, A Bhattacharya, ... Scientific Reports 6, 36294, 2016	68	2016
Distorted wurtzite unit cells: Determination of lattice parameters of nonpolar a-plane AlGaN and estimation of solid phase Al content MR Laskar, T Ganguli, AA Rahman, A Mukherjee, N Hatui, MR Gokhale, ... Journal of Applied Physics 109 (1), 013107-013107-8, 2011	63	2011
Study of sputtered molybdenum nitride as a diffusion barrier NG Anitha, V.P., Bhattacharya, A., Patil, M S. Thin Solid Films 236 (1), 306-310, 1993	62	1993
Quantum-confined stark effect in localized luminescent centers within InGaN/GaN quantum-well based light emitting diodes S De, A Layek, S Bhattacharya, D Kumar Das, A Kadir, A Bhattacharya, ... Applied Physics Letters 101 (12), 121919, 2012	61	2012
High continuous wave output power InGaAs/InGaAsP/InGaP diode lasers: Effect of substrate misorientation LJ Mawst, A Bhattacharya, M Nesnidal, J Lopez, D Botez, JA Morris, ... Applied physics letters 67 (20), 2901-2903, 1995	60	1995
Three-core ARROW-type diode laser: novel high-power, single-mode device, and effective master oscillator for flared antiguided MOPA's C Zmudzinski, D Botez, LI Mawst, A Bhattacharya, M Nesnidal, RF Nabiev IEEE Journal of Selected Topics in Quantum Electronics 1 (2), 129-137, 1995	60	1995
Inductively coupled plasma reactive-ion etching of β-Ga₂O₃: Comprehensive investigation of plasma chemistry and temperature AP Shah, A Bhattacharya Journal of Vacuum Science & Technology A: Vacuum, Surfaces, and Films 35 (4 …, 2017	59	2017
Two Distinct Origins of Highly Localized Luminescent Centers within InGaN/GaN Quantum‐Well Light‐Emitting Diodes S De, A Layek, A Raja, A Kadir, MR Gokhale, A Bhattacharya, S Dhar, ... Advanced Functional Materials 21 (20), 3828-3835, 2011	59	2011

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