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Lise Lahourcade
Lise Lahourcade
LASPE @ EPFL - Switzerland
Bestätigte E-Mail-Adresse bei epfl.ch
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Zitiert von
Zitiert von
Jahr
Structural and optoelectronic characterization of RF sputtered ZnSnN2
L Lahourcade, NC Coronel, KT Delaney, SK Shukla, NA Spaldin, ...
Adv. Mater 25 (18), 2562-2566, 2013
2202013
Critical impact of Ehrlich–Schwöbel barrier on GaN surface morphology during homoepitaxial growth
NAK Kaufmann, L Lahourcade, B Hourahine, D Martin, N Grandjean
Journal of Crystal Growth 433, 36-42, 2016
802016
Plasma-assisted molecular-beam epitaxy of AlN (112¯ 2) on m sapphire
L Lahourcade, E Bellet-Amalric, E Monroy, M Abouzaid, P Ruterana
Applied Physics Letters 90 (13), 2007
772007
Enhancement of Auger recombination induced by carrier localization in InGaN/GaN quantum wells
M Shahmohammadi, W Liu, G Rossbach, L Lahourcade, A Dussaigne, ...
Physical Review B 95 (12), 125314, 2017
532017
Defect structure in heteroepitaxial semipolar ()(Ga, Al) N
YAR Dasilva, MP Chauvat, P Ruterana, L Lahourcade, E Monroy, G Nataf
Journal of Physics: Condensed Matter 22 (35), 355802, 2010
492010
Interband and intersubband optical characterization of semipolar (112 2)-oriented GaN/AlN multiple-quantum-well structures
L Lahourcade, PK Kandaswamy, J Renard, P Ruterana, H Machhadani, ...
Applied Physics Letters 93 (11), 2008
492008
Ga kinetics in plasma-assisted molecular-beam epitaxy of GaN (112¯ 2): Effect on the structural and optical properties
L Lahourcade, J Renard, B Gayral, E Monroy, MP Chauvat, P Ruterana
Journal of Applied Physics 103 (9), 2008
452008
Optical absorption edge broadening in thick InGaN layers: Random alloy atomic disorder and growth mode induced fluctuations
R Butté, L Lahourcade, TK Uždavinys, G Callsen, M Mensi, M Glauser, ...
Applied Physics Letters 112 (3), 2018
352018
Room-Temperature Transport of Indirect Excitons in Quantum Wells
F Fedichkin, T Guillet, P Valvin, B Jouault, C Brimont, T Bretagnon, ...
Physical Review Applied 6 (1), 014011, 2016
352016
Mg doping and its effect on the semipolar GaN (112¯ 2) growth kinetics
L Lahourcade, J Pernot, A Wirthmüller, MP Chauvat, P Ruterana, A Laufer, ...
Applied Physics Letters 95 (17), 2009
322009
Morphology and strain of self-assembled semipolar GaN quantum dots in (112¯ 2) AlN
GP Dimitrakopulos, E Kalesaki, J Kioseoglou, T Kehagias, A Lotsari, ...
Journal of Applied Physics 108 (10), 2010
252010
Earth-abundant ZnSnxGe1−xN2alloys as potential photovoltaic absorber materials
NC Coronel, L Lahourcade, KT Delaney, AM Shing, HA Atwater
2012 38th IEEE Photovoltaic Specialists Conference, 003204-003207, 2012
242012
Stranski–Krastanow growth of (112¯ 2)-oriented GaN/AlN quantum dots
L Lahourcade, S Valdueza-Felip, T Kehagias, GP Dimitrakopulos, ...
Applied Physics Letters 94 (11), 2009
212009
Influence of deposition conditions on nanocrystalline InN layers synthesized on Si (1 1 1) and GaN templates by RF sputtering
S Valdueza-Felip, FB Naranjo, M González-Herráez, L Lahourcade, ...
Journal of crystal growth 312 (19), 2689-2694, 2010
162010
Interfacial structure of semipolar AlN grown on m‐plane sapphire by MBE
T Kehagias, L Lahourcade, A Lotsari, E Monroy, GP Dimitrakopulos, ...
physica status solidi (b) 247 (7), 1637-1640, 2010
162010
Impact of surface morphology on the properties of light emission in InGaN epilayers
TK Uždavinys, S Marcinkevičius, M Mensi, L Lahourcade, JF Carlin, ...
Applied Physics Express 11 (5), 051004, 2018
152018
Molecular beam epitaxy of semipolar AlN () and GaN () on m-sapphire
L Lahourcade, E Bellet-Amalric, E Monroy, MP Chauvat, P Ruterana
Journal of Materials Science: Materials in Electronics 19 (8), 805-809, 2008
122008
Correlation of optical, structural, and compositional properties with V-pit distribution in InGaN/GaN multiquantum wells
MH Zoellner, GA Chahine, L Lahourcade, C Mounir, CL Manganelli, ...
ACS applied materials & interfaces 11 (25), 22834-22839, 2019
102019
InGaN laser diodes emitting at 500 nm with p-layers grown by molecular beam epitaxy
M Malinverni, JM Lamy, D Martin, L Lahourcade, E Feltin, J Dorsaz, ...
Applied Physics Express 8 (2), 022105, 2015
102015
High‐surface‐quality nanocrystalline InN layers deposited on GaN templates by RF sputtering
S Valdueza‐Felip, FB Naranjo, M González‐Herráez, L Lahourcade, ...
physica status solidi (a) 208 (1), 65-69, 2011
102011
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