| Semiconducting graphene from highly ordered substrate interactions MS Nevius, M Conrad, F Wang, A Celis, MN Nair, A Taleb-Ibrahimi, ... Physical review letters 115 (13), 136802, 2015 | 204 | 2015 |
| Effect of ultraviolet and x-ray radiation on the work function of TiO2 surfaces S Gutmann, MA Wolak, M Conrad, MM Beerbom, R Schlaf Journal of Applied Physics 107 (10), 2010 | 65 | 2010 |
| Work function measurements on nano-crystalline zinc oxide surfaces S Gutmann, M Conrad, MA Wolak, MM Beerbom, R Schlaf Journal of Applied Physics 111 (12), 2012 | 54 | 2012 |
| Band gap opening induced by the structural periodicity in epitaxial graphene buffer layer M N. Nair, I Palacio, A Celis, A Zobelli, A Gloter, S Kubsky, JP Turmaud, ... Nano letters 17 (4), 2681-2689, 2017 | 51 | 2017 |
| Structure and evolution of semiconducting buffer graphene grown on SiC (0001) M Conrad, J Rault, Y Utsumi, Y Garreau, A Vlad, A Coati, JP Rueff, ... Physical Review B 96 (19), 195304, 2017 | 40 | 2017 |
| Wide band gap semiconductor from a hidden 2D incommensurate graphene phase M Conrad, F Wang, M Nevius, K Jinkins, A Celis, M Narayanan Nair, ... Nano letters 17 (1), 341-347, 2017 | 35 | 2017 |
| Electronic structure of indium tin oxide/nanocrystalline TiO2 interfaces as used in dye-sensitized solar cell devices S Gutmann, MA Wolak, M Conrad, MM Beerbom, R Schlaf Journal of Applied Physics 109 (11), 2011 | 15 | 2011 |
| Experimental investigations and theoretical modeling of large area maskless photopolymerization with grayscale exposure M Conrad Georgia Institute of Technology, 2011 | 8 | 2011 |
| Charge injection barriers and chemical interaction at the CdTe/NbSe2 interface MA Wolak, S Gutmann, M Conrad, MM Beerbom, C Ferekides, R Schlaf Journal of Applied Physics 109 (2), 2011 | 8 | 2011 |
| Revealing interfacial disorder at the growth-front of thick many-layer epitaxial graphene on SiC: a complementary neutron and X-ray scattering investigation AR Mazza, A Miettinen, AA Daykin, X He, TR Charlton, M Conrad, S Guha, ... Nanoscale 11 (30), 14434-14445, 2019 | 7 | 2019 |
| The structural modification and magnetism of many-layer epitaxial graphene implanted with low-energy light ions AR Mazza, A Miettinen, Z Gai, X He, TR Charlton, TZ Ward, M Conrad, ... Carbon 192, 462-472, 2022 | 4 | 2022 |
| From wafers to bits and back again: using deep learning to accelerate the development and characterization of SiC R Leonard, M Conrad, E Van Brunt, J Giles, E Hutchins, E Balkas Materials science forum 1004, 321-327, 2020 | 4 | 2020 |
| Structure and properties of incommensurate and commensurate phases of graphene on SiC (0001) MD Conrad Georgia Institute of Technology, 2017 | 4 | 2017 |
| Alignment for wafer images RT Leonard, MD Conrad, ER Van Brunt US Patent 11,361,454, 2022 | 3 | 2022 |
| Large diameter silicon carbide wafers Y Khlebnikov, VR Sakhalkar, CA Kent, VF Tsvetkov, MJ Paisley, ... US Patent 12,054,850, 2024 | 2 | 2024 |
| Atomic deuteration of epitaxial many-layer graphene on 4H-SiC (0001¯) AR Mazza, A Miettinen, M Conrad, TR Charlton, X He, S Guha, G Bian, ... Journal of Vacuum Science & Technology B 37 (4), 2019 | 2 | 2019 |
| Nondestructive characterization for crystalline wafers RT Leonard, MD Conrad, ER Van Brunt US Patent 12,040,355, 2024 | 1 | 2024 |
| Large dimension silicon carbide single crystalline materials with reduced crystallographic stress Y Khlebnikov, VR Sakhalkar, CA Kent, VF Tsvetkov, MJ Paisley, ... US Patent App. 17/121,863, 2022 | 1 | 2022 |
| Semiconducting graphene and its incommensurate SiC interface M Conrad, M Nevius, F Wang, K Jinkins, A Celis, M Nair, A Coati, ... APS March Meeting Abstracts 2016, V26. 013, 2016 | 1 | 2016 |
| Implementation of Large Scale Deep Learning Non-Destructive Methods for Characterizing 4H-SiC Materials R Leonard, M Conrad, E Van Brunt, J Witry, E Balkas Defect and Diffusion Forum 426, 3-9, 2023 | | 2023 |
Amina Taleb IbrahimiCNRS Research Director - Science Director @ Synchrotron SOLEILBestätigte E-Mail-Adresse bei synchrotron-soleil.fr
