Atomic layer deposition method for depositing a layer P Zimmerman, M Caymax, S De Gendt, A Delabie, LA Ragnarsson
US Patent 7,579,285, 2009
433 2009 Method for manufacturing a semiconductor device comprising transistors each having a different effective work function LA Ragnarsson, T Schram, HFW Dekkers, SA Chew
US Patent 9,287,273, 2016
397 2016 Ultrathin high-K gate stacks for advanced CMOS devices EP Gusev, DA Buchanan, E Cartier, A Kumar, D DiMaria, S Guha, ...
International Electron Devices Meeting. Technical Digest (Cat. No. 01CH37224 …, 2001
394 2001 Origin of NBTI variability in deeply scaled pFETs B Kaczer, T Grasser, PJ Roussel, J Franco, R Degraeve, LA Ragnarsson, ...
2010 IEEE International Reliability Physics Symposium, 26-32, 2010
389 2010 Electrical properties of high-κ gate dielectrics: Challenges, current issues, and possible solutions M Houssa, L Pantisano, LÅ Ragnarsson, R Degraeve, T Schram, ...
Materials Science and Engineering: R: Reports 51 (4-6), 37-85, 2006
341 2006 Ultra low-EOT (5 Å) gate-first and gate-last high performance CMOS achieved by gate-electrode optimization LÅ Ragnarsson, Z Li, J Tseng, T Schram, E Rohr, MJ Cho, T Kauerauf, ...
2009 IEEE International Electron Devices Meeting (IEDM), 1-4, 2009
332 2009 Vertically stacked gate-all-around Si nanowire CMOS transistors with dual work function metal gates H Mertens, R Ritzenthaler, A Chasin, T Schram, E Kunnen, A Hikavyy, ...
2016 IEEE International Electron Devices Meeting (IEDM), 19.7. 1-19.7. 4, 2016
171 2016 Benchmarking SOI and bulk FinFET alternatives for PLANAR CMOS scaling succession T Chiarella, L Witters, A Mercha, C Kerner, M Rakowski, C Ortolland, ...
Solid-State Electronics 54 (9), 855-860, 2010
161 2010 High performance Ge pMOS devices using a Si-compatible process flow P Zimmerman, G Nicholas, B De Jaeger, B Kaczer, A Stesmans, ...
2006 International Electron Devices Meeting, 1-4, 2006
151 2006 Novel forksheet device architecture as ultimate logic scaling device towards 2nm P Weckx, J Ryckaert, ED Litta, D Yakimets, P Matagne, P Schuddinck, ...
2019 IEEE International Electron Devices Meeting (IEDM), 36.5. 1-36.5. 4, 2019
136 2019 High temperature stability of S Guha, EP Gusev, H Okorn-Schmidt, M Copel, LÅ Ragnarsson, ...
Applied Physics Letters 81 (16), 2956-2958, 2002
119 2002 Electrical characterization of Pb centers in (100)Si-SiO2 structures: The influence of surface potential on passivation during post metallization anneal LÅ Ragnarsson, P Lundgren
Journal of Applied Physics 88 (2), 938-942, 2000
114 2000 Impact of single charged gate oxide defects on the performance and scaling of nanoscaled FETs J Franco, B Kaczer, M Toledano-Luque, PJ Roussel, J Mitard, ...
2012 IEEE International Reliability Physics Symposium (IRPS), 5A. 4.1-5A. 4.6, 2012
112 2012 Insight into N/PBTI mechanisms in sub-1-nm-EOT devices M Cho, JD Lee, M Aoulaiche, B Kaczer, P Roussel, T Kauerauf, ...
IEEE Transactions on Electron Devices 59 (8), 2042-2048, 2012
107 2012 Molecular-beam-deposited yttrium-oxide dielectrics in aluminum-gated metal–oxide–semiconductor field-effect transistors: Effective electron mobility LÅ Ragnarsson, S Guha, M Copel, E Cartier, NA Bojarczuk, J Karasinski
Applied Physics Letters 78 (26), 4169-4171, 2001
100 2001 Estimation of fixed charge densities in hafnium-silicate gate dielectrics VS Kaushik, BJ O'Sullivan, G Pourtois, N Van Hoornick, A Delabie, ...
IEEE Transactions on Electron Devices 53 (10), 2627-2633, 2006
90 2006 DTCO including sustainability: Power-performance-area-cost-environmental score (PPACE) analysis for logic technologies MG Bardon, P Wuytens, LÅ Ragnarsson, G Mirabelli, D Jang, G Willems, ...
2020 IEEE International Electron Devices Meeting (IEDM), 41.4. 1-41.4. 4, 2020
80 2020 Ultrathin EOT high-κ/metal gate devices for future technologies: Challenges, achievements and perspectives LÅ Ragnarsson, T Chiarella, M Togo, T Schram, P Absil, T Hoffmann
Microelectronic Engineering 88 (7), 1317-1322, 2011
80 2011 Degradation and breakdown of 0.9 nm EOT SiO/sub 2/ALD HfO/sub 2/metal gate stacks under positive constant voltage stress R Degraeve, T Kauerauf, M Cho, M Zahid, LA Ragnarsson, DP Brunco, ...
IEEE InternationalElectron Devices Meeting, 2005. IEDM Technical Digest …, 2005
77 2005 1.5× 10− 9 Ωcm2 Contact resistivity on highly doped Si: P using Ge pre-amorphization and Ti silicidation H Yu, M Schaekers, E Rosseel, A Peter, JG Lee, WB Song, S Demuynck, ...
2015 IEEE International Electron Devices Meeting (IEDM), 21.7. 1-21.7. 4, 2015
72 2015 
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