Eduard A Cartier
Eduard A Cartier
IBM Research, T. J. Watson Research Center
Bestätigte E-Mail-Adresse bei
Zitiert von
Zitiert von
Effective electron mobility in Si inversion layers in metal–oxide–semiconductor systems with a high-κ insulator: The role of remote phonon scattering
MV Fischetti, DA Neumayer, EA Cartier
Journal of Applied Physics 90 (9), 4587-4608, 2001
Impact ionization, trap creation, degradation, and breakdown in silicon dioxide films on silicon
DJ DiMaria, E Cartier, D Arnold
Journal of Applied Physics 73 (7), 3367-3384, 1993
Mechanism for stress‐induced leakage currents in thin silicon dioxide films
DJ DiMaria, E Cartier
Journal of Applied physics 78 (6), 3883-3894, 1995
Materials characterization of ZrO2–SiO2 and HfO2–SiO2 binary oxides deposited by chemical solution deposition
DA Neumayer, E Cartier
Journal of Applied Physics 90 (4), 1801-1808, 2001
High-resolution depth profiling in ultrathin films on Si
EP Gusev, M Copel, E Cartier, IJR Baumvol, C Krug, MA Gribelyuk
Applied Physics Letters 76 (2), 176-178, 2000
Ultrathin high-K metal oxides on silicon: processing, characterization and integration issues
EP Gusev, E Cartier, DA Buchanan, M Gribelyuk, M Copel, ...
Microelectronic Engineering 59 (1-4), 341-349, 2001
Passivation and depassivation of silicon dangling bonds at the Si/SiO2 interface by atomic hydrogen
E Cartier, JH Stathis, DA Buchanan
Applied physics letters 63 (11), 1510-1512, 1993
Origin of the threshold voltage instability in SiO2/HfO2 dual layer gate dielectrics
A Kerber, E Cartier, L Pantisano, R Degraeve, T Kauerauf, Y Kim, A Hou, ...
IEEE Electron Device Letters 24 (2), 87-89, 2003
Atomic beam deposition of lanthanum-and yttrium-based oxide thin films for gate dielectrics
S Guha, E Cartier, MA Gribelyuk, NA Bojarczuk, MC Copel
Applied Physics Letters 77 (17), 2710-2712, 2000
Ultrathin high-K gate stacks for advanced CMOS devices
EP Gusev, DA Buchanan, E Cartier, A Kumar, D DiMaria, S Guha, ...
International Electron Devices Meeting. Technical Digest (Cat. No. 01CH37224 …, 2001
Physical and electrical characterization of Hafnium oxide and Hafnium silicate sputtered films
A Callegari, E Cartier, M Gribelyuk, HF Okorn-Schmidt, T Zabel
Journal of Applied Physics 90 (12), 6466-6475, 2001
Theory of high-field electron transport and impact ionization in silicon dioxide
D Arnold, E Cartier, DJ DiMaria
Physical Review B 49 (15), 10278, 1994
Threshold voltage instabilities in high-/spl kappa/gate dielectric stacks
S Zafar, A Kumar, E Gusev, E Cartier
IEEE Transactions on Device and Materials Reliability 5 (1), 45-64, 2005
Enabling enhanced reliability and mobility for replacement gate planar and finfet structures
T Ando, EA Cartier, K Choi, WL Lai, V Narayanan, R Ramachandran
US Patent App. 14/696,015, 2015
Nitrogen-containing field effect transistor gate stack containing a threshold voltage control layer formed via deposition of a metal oxide
NA Bojarczuk Jr, C Cabral Jr, EA Cartier, MM Frank, EP Gousev, S Guha, ...
US Patent 7,242,055, 2007
Formation of a stratified lanthanum silicate dielectric by reaction with Si (001)
M Copel, E Cartier, FM Ross
Applied Physics Letters 78 (11), 1607-1609, 2001
Gate-all-around silicon nanowire 25-stage CMOS ring oscillators with diameter down to 3 nm
S Bangsaruntip, A Majumdar, GM Cohen, SU Engelmann, Y Zhang, ...
2010 symposium on VLSI technology, 21-22, 2010
Switching of ferroelectric polarization in epitaxial BaTiO3 films on silicon without a conducting bottom electrode
C Dubourdieu, J Bruley, TM Arruda, A Posadas, J Jordan-Sweet, ...
Nature nanotechnology 8 (10), 748, 2013
Anode hole injection and trapping in silicon dioxide
DJ DiMaria, E Cartier, DA Buchanan
Journal of applied physics 80 (1), 304-317, 1996
Reliability challenges for CMOS technology qualifications with hafnium oxide/titanium nitride gate stacks
A Kerber, EA Cartier
IEEE Transactions on Device and Materials Reliability 9 (2), 147-162, 2009
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