Maria Tchernycheva
Maria Tchernycheva
Researcher at Centre de Nanosciences et de Nanotechnologies (C2N), CNRS, Universite Paris-Sud
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Zitiert von
Zitiert von
Systematic experimental and theoretical investigation of intersubband absorption in quantum wells
M Tchernycheva, L Nevou, L Doyennette, FH Julien, E Warde, F Guillot, ...
Physical Review B—Condensed Matter and Materials Physics 73 (12), 125347, 2006
M-plane core–shell InGaN/GaN multiple-quantum-wells on GaN wires for electroluminescent devices
R Koester, JS Hwang, D Salomon, X Chen, C Bougerol, JP Barnes, ...
Nano letters 11 (11), 4839-4845, 2011
Flexible light-emitting diodes based on vertical nitride nanowires
X Dai, A Messanvi, H Zhang, C Durand, J Eymery, C Bougerol, FH Julien, ...
Nano letters 15 (10), 6958-6964, 2015
Nanometer scale spectral imaging of quantum emitters in nanowires and its correlation to their atomically resolved structure
LF Zagonel, S Mazzucco, M Tencé, K March, R Bernard, B Laslier, ...
Nano letters 11 (2), 568-573, 2011
GaN/AlN short-period superlattices for intersubband optoelectronics: A systematic study of their epitaxial growth, design, and performance
PK Kandaswamy, F Guillot, E Bellet-Amalric, E Monroy, L Nevou, ...
Journal of Applied Physics 104 (9), 2008
InGaN/GaN core–shell single nanowire light emitting diodes with graphene-based p-contact
M Tchernycheva, P Lavenus, H Zhang, AV Babichev, G Jacopin, ...
Nano letters 14 (5), 2456-2465, 2014
Integrated photonic platform based on InGaN/GaN nanowire emitters and detectors
M Tchernycheva, A Messanvi, A de Luna Bugallo, G Jacopin, P Lavenus, ...
Nano letters 14 (6), 3515-3520, 2014
Ultraviolet photodetector based on GaN/AlN quantum disks in a single nanowire
L Rigutti, M Tchernycheva, A De Luna Bugallo, G Jacopin, FH Julien, ...
Nano letters 10 (8), 2939-2943, 2010
Au-assisted molecular beam epitaxy of InAs nanowires: Growth and theoretical analysis
M Tchernycheva, L Travers, G Patriarche, F Glas, JC Harmand, GE Cirlin, ...
Journal of Applied Physics 102 (9), 2007
Growth and characterization of InP nanowires with InAsP insertions
M Tchernycheva, GE Cirlin, G Patriarche, L Travers, V Zwiller, U Perinetti, ...
Nano letters 7 (6), 1500-1504, 2007
Near infrared quantum cascade detector in GaN∕ AlGaN∕ AlN heterostructures
A Vardi, G Bahir, F Guillot, C Bougerol, E Monroy, SE Schacham, ...
Applied Physics Letters 92 (1), 2008
Growth of GaN free-standing nanowires by plasma-assisted molecular beam epitaxy: structural and optical characterization
M Tchernycheva, C Sartel, G Cirlin, L Travers, G Patriarche, JC Harmand, ...
Nanotechnology 18 (38), 385306, 2007
GaN nanowire ultraviolet photodetector with a graphene transparent contact
AV Babichev, H Zhang, P Lavenus, FH Julien, AY Egorov, YT Lin, LW Tu, ...
Applied Physics Letters 103, 201103, 2013
Temperature conditions for GaAs nanowire formation by Au-assisted molecular beam epitaxy
M Tchernycheva, JC Harmand, G Patriarche, L Travers, GE Cirlin
Nanotechnology 17 (16), 4025, 2006
Characterization and modeling of a ZnO nanowire ultraviolet photodetector with graphene transparent contact
H Zhang, AV Babichev, G Jacopin, P Lavenus, FH Julien, A Yu Egorov, ...
Journal of Applied Physics 114 (23), 2013
Epitaxy of GaN nanowires on graphene
V Kumaresan, L Largeau, A Madouri, F Glas, H Zhang, F Oehler, ...
Nano letters 16 (8), 4895-4902, 2016
Intersubband spectroscopy of doped and undoped GaN/AlN quantum wells grown by molecular-beam epitaxy
A Helman, M Tchernycheva, A Lusson, E Warde, FH Julien, K Moumanis, ...
Applied physics letters 83 (25), 5196-5198, 2003
GaN/AlGaN intersubband optoelectronic devices
H Machhadani, P Kandaswamy, S Sakr, A Vardi, A Wirtmüller, L Nevou, ...
New Journal of Physics 11 (12), 125023, 2009
Flexible white light emitting diodes based on nitride nanowires and nanophosphors
N Guan, X Dai, A Messanvi, H Zhang, J Yan, E Gautier, C Bougerol, ...
ACS photonics 3 (4), 597-603, 2016
Facet and in-plane crystallographic orientations of GaN nanowires grown on Si (111)
L Largeau, DL Dheeraj, M Tchernycheva, GE Cirlin, JC Harmand
Nanotechnology 19 (15), 155704, 2008
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