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David Allred
David Allred
Brigham Young University
Bestätigte E-Mail-Adresse bei byu.edu - Startseite
Titel
Zitiert von
Zitiert von
Jahr
Superconductivity at 155 K
SR Ovshinsky, RT Young, DD Allred, G DeMaggio, GA Van der Leeden
Physical review letters 58 (24), 2579, 1987
3601987
The extreme ultraviolet imager investigation for the IMAGE mission
BR Sandel, AL Broadfoot, CC Curtis, RA King, TC Stone, RH Hill, J Chen, ...
The image mission, 197-242, 2000
2842000
Profiling hydrogen in materials using ion beams
JF Ziegler, CP Wu, P Williams, CW White, B Terreault, BMU Scherzer, ...
nuclear instruments and methods 149 (1-3), 19-39, 1978
2241978
Optical properties and structure of amorphous silicon films prepared by CVD
M Janai, DD Allred, DC Booth, BO Seraphin
Solar Energy Materials 1 (1-2), 11-27, 1979
1661979
Photovoltaic device having incident radiation directing means for total internal reflection
W Czubatyj, R Singh, J Doehler, DD Allred, JM Reyes
US Patent 4,419,533, 1983
1381983
Chemically vapor-deposited ZrB2 as a selective solar absorber
E Randich, DD Allred
Thin Solid Films 83 (4), 393-398, 1981
1211981
Photo-assisted CVD
DD Allred, L Walter, JM Reyes, SR Ovshinsky
US Patent 4,435,445, 1984
1161984
Method of depositing semiconductor films by free radical generation
SR Ovshinsky, DD Allred, L Walter, SJ Hudgens
US Patent 4,615,905, 1986
1121986
Method of making amorphous semiconductor alloys and devices using microwave energy
SR Ovshinsky, DD Allred, L Walter, SJ Hudgens
US Patent 4,504,518, 1985
971985
X-ray wave diffraction optics constructed by atomic layer epitaxy
JM Thorne, JK Shurtleff, DD Allred, RT Perkins
US Patent 5,458,084, 1995
951995
Photoluminescence and absorption studies of defects in CdTe and Zn x Cd 1− x Te crystals
CB Davis, DD Allred, A Reyes-Mena, J González-Hernández, O González, ...
Physical Review B 47 (20), 13363, 1993
771993
Determination of the insulation gap of uranium oxides by spectroscopic ellipsometry and density functional theory
H He, DA Andersson, DD Allred, KD Rector
The Journal of Physical Chemistry C 117 (32), 16540-16551, 2013
752013
The use of nuclear reactions and SIMS for quantitative depth profiling of hydrogen in amorphous silicon
GJ Clark, CW White, DD Allred, BR Appleton, CW Magee, DE Carlson
Applied Physics Letters 31 (9), 582-585, 1977
751977
Method of making amorphous semiconductor alloys and devices using microwave energy
SR Ovshinsky, DD Allred, L Walter, SJ Hudgens
US Patent 4,517,223, 1985
681985
Stabilized CVD amorphous silicon for high temperature photothermal solar energy conversion
DC Booth, DD Allred, BO Seraphin
Solar Energy Materials 2 (1), 107-124, 1979
641979
High throughput reflectivity and resolution x-ray dispersive and reflective structures for the 100 eV to 5000 eV energy range and method of making the devices
HK Pew, DD Allred
US Patent 5,485,499, 1996
551996
The application of nuclear reactions for quantitative hydrogen analysis in a variety of different materials problems
GJ Clark, CW White, DD Allred, BR Appleton, FB Koch, CW Magee
Nuclear Instruments and Methods 149 (1-3), 9-18, 1978
531978
Low-frequency feature in the first-order Raman spectrum of amorphous carbon
Q Wang, DD Allred, J Gonza
Physical Review B 47 (10), 6119, 1993
481993
Coating for preventing corrosion to beryllium x-ray windows and method of preparing
DD Allred, F Yuan, I Rudich
US Patent 5,226,067, 1993
441993
Eliminating carbon contamination on oxidized Si surfaces using a VUV excimer lamp
EL Strein, D Allred
Thin Solid Films 517 (3), 1011-1015, 2008
432008
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