C M Knoedler
C M Knoedler
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Zitiert von
Zitiert von
Direct observation of ballistic transport in GaAs
M Heiblum, MI Nathan, DC Thomas, CM Knoedler
Physical review letters 55 (20), 2200, 1985
Zeeman bifurcation of quantum-dot spectra
W Hansen, TP Smith III, KY Lee, JA Brum, CM Knoedler, JM Hong, ...
Physical review letters 62 (18), 2168, 1989
Influence of geometry on the Hall effect in ballistic wires
CJB Ford, S Washburn, M Büttiker, CM Knoedler, JM Hong
Physical review letters 62 (23), 2724, 1989
Chucks and methods for positioning multiple objects on a substrate
HCS Sun, CM Knoedler
US Patent 5,788,814, 1998
Tunneling hot‐electron transfer amplifier: A hot‐electron GaAs device with current gain
M Heiblum, DC Thomas, CM Knoedler, MI Nathan
Applied physics letters 47 (10), 1105-1107, 1985
Electronic spectroscopy of zero-dimensional systems
TP Smith III, KY Lee, CM Knoedler, JM Hong, DP Kern
Physical Review B 38 (3), 2172, 1988
Capacitance oscillations in one-dimensional electron systems
TP Smith III, H Arnot, JM Hong, CM Knoedler, SE Laux, H Schmid
Physical review letters 59 (24), 2802, 1987
Electron interference effects in quantum wells: Observation of bound and resonant states
M Heiblum, MV Fischetti, WP Dumke, DJ Frank, IM Anderson, ...
Physical review letters 58 (8), 816, 1987
Lateral tunneling, ballistic transport, and spectroscopy in a two-dimensional electron gas
A Palevski, M Heiblum, CP Umbach, CM Knoedler, AN Broers, RH Koch
Physical review letters 62 (15), 1776, 1989
A GaAs gate heterojunction FET
PM Solomon, CM Knoedler, SL Wright
IEEE electron device letters 5 (9), 379-381, 1984
Uncooled IR imager with 5-mK NEDT
R Amantea, CM Knoedler, FP Pantuso, V Patel, DJ Sauer, JR Tower
Infrared Technology and Applications XXIII 3061, 210-222, 1997
Liquid distribution system
R Demers, SE McBride, CM Knoedler, R Amantea, R Moroney, ...
US Patent 6,033,544, 2000
dc performance of ballistic tunneling hot‐electron transfer amplifiers
M Heiblum, IM Anderson, CM Knoedler
Applied physics letters 49 (4), 207-209, 1986
Reactive ion etching damage to GaAs layers with etch stops
CM Knoedler, L Osterling, H Shtrikman
Journal of Vacuum Science & Technology B: Microelectronics Processing and …, 1988
High density, high performance memory circuit package
TM Cipolla, PW Coteus, BC Derdall, CM Knoedler, AP Lanzetta, ...
US Patent 5,268,815, 1993
Phase-slip shot noise at the two-dimensional superconducting transition: evidence for vortices?
RF Voss, CM Knoedler, PM Horn
Physical Review Letters 45 (18), 1523, 1980
Magnetic anisotropy of a one-dimensional electron system
TP Smith III, JA Brum, JM Hong, CM Knoedler, H Arnot, L Esaki
Physical review letters 61 (5), 585, 1988
Gated, asymmetric rings as tunable electron interferometers
CJB Ford, AB Fowler, JM Hong, CM Knoedler, SE Laux, JJ Wainer, ...
Surface science 229 (1-3), 307-311, 1990
Evidence of hot-electron transfer into an upper valley in GaAs
M Heiblum, E Calleja, IM Anderson, WP Dumke, CM Knoedler, L Osterling
Physical review letters 56 (26), 2854, 1986
High-gain pseudomorphic InGaAs base ballistic hot-electron device
K Seo, M Heiblum, CM Knoedler, JE Oh, J Pamulapati, P Bhattacharya
IEEE Electron device letters 10 (2), 73-75, 1989
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