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Paul J Simmonds
Paul J Simmonds
Bestätigte E-Mail-Adresse bei tufts.edu
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Zitiert von
Zitiert von
Jahr
Quantum dot resonant tunneling diode for telecommunication wavelength single photon detection
HW Li, BE Kardynał, P See, AJ Shields, P Simmonds, HE Beere, ...
Applied Physics Letters 91 (7), 073516-073516-3, 2007
882007
Electrochemically induced amorphous-to-rock-salt phase transformation in niobium oxide electrode for Li-ion batteries
P Barnes, Y Zuo, K Dixon, D Hou, S Lee, Z Ma, JG Connell, H Zhou, ...
Nature Materials 21 (7), 795-803, 2022
862022
Review Article: Molecular beam epitaxy of lattice-matched InAlAs and InGaAs layers on InP (111) A,(111) B, and (110)
CD Yerino, B Liang, DL Huffaker, PJ Simmonds, ML Lee
Journal of Vacuum Science & Technology B, Nanotechnology and …, 2017
612017
Tensile-strained growth on low-index GaAs
PJ Simmonds, M Larry Lee
Journal of Applied Physics 112 (5), 054313, 2012
522012
GaSb thermophotovoltaic cells grown on GaAs by molecular beam epitaxy using interfacial misfit arrays
BC Juang, RB Laghumavarapu, BJ Foggo, PJ Simmonds, A Lin, B Liang, ...
Applied Physics Letters 106 (11), 111101, 2015
512015
Strain-driven quantum dot self-assembly by molecular beam epitaxy
KE Sautter, KD Vallejo, PJ Simmonds
Journal of Applied Physics 128 (3), 031101, 2020
482020
Strain-driven growth of GaAs (111) quantum dots with low fine structure splitting
CD Yerino, PJ Simmonds, B Liang, D Jung, C Schneider, S Unsleber, ...
Applied Physics Letters 105 (25), 251901, 2014
452014
Tuning Quantum Dot Luminescence Below the Bulk Band Gap Using Tensile Strain
PJ Simmonds, CD Yerino, M Sun, B Liang, DL Huffaker, VG Dorogan, ...
ACS nano 7 (6), 5017-5023, 2013
412013
Metamorphic GaAsP buffers for growth of wide-bandgap InGaP solar cells
J Simon, S Tomasulo, PJ Simmonds, M Romero, ML Lee
Journal of Applied Physics 109 (1), 013708, 2011
392011
Structural and optical properties of InAs/AlAsSb quantum dots with GaAs (Sb) cladding layers
PJ Simmonds, R Babu Laghumavarapu, M Sun, A Lin, CJ Reyner, ...
Applied Physics Letters 100 (24), 243108, 2012
382012
Self-assembly on (111)-oriented III-V surfaces
PJ Simmonds, M Larry Lee
Applied Physics Letters 99 (12), 123111, 2011
382011
Photoluminescence from In0.5Ga0.5P/GaP quantum dots coupled to photonic crystal cavities
K Rivoire, S Buckley, Y Song, P Simmonds, ML Lee, J Vučković
Frontiers in Optics 2011/Laser Science XXVII, OSA Technical Digest (Optical …, 2011
332011
Quantum transport in In 0.75 Ga 0.25 As quantum wires
PJ Simmonds, F Sfigakis, HE Beere, DA Ritchie, M Pepper, D Anderson, ...
Appl. Phys. Lett 92, 152108, 2008
322008
Hybrid type-I InAs/GaAs and type-II GaSb/GaAs quantum dot structure with enhanced photoluminescence
HM Ji, B Liang, PJ Simmonds, BC Juang, T Yang, RJ Young, DL Huffaker
Applied Physics Letters 106 (10), 103104, 2015
312015
Self-assembled In 0.5 Ga 0.5 As quantum dots on GaP
Y Song, PJ Simmonds, ML Lee
Applied Physics Letters 97, 223110, 2010
292010
Anomalous Stranski-Krastanov growth of (111)-oriented quantum dots with tunable wetting layer thickness
CF Schuck, SK Roy, T Garrett, Q Yuan, Y Wang, CI Cabrera, ...
Scientific reports 9 (1), 18179, 2019
282019
Self-assembly of (111)-oriented tensile-strained quantum dots by molecular beam epitaxy
CF Schuck, RA McCown, A Hush, A Mello, S Roy, JW Spinuzzi, B Liang, ...
Journal of Vacuum Science & Technology B, Nanotechnology and …, 2018
282018
Defect generation in TiO 2 nanotube anodes via heat treatment in various atmospheres for lithium-ion batteries
AI Savva, KA Smith, M Lawson, SR Croft, AE Weltner, CD Jones, H Bull, ...
Physical Chemistry Chemical Physics 20 (35), 22537-22546, 2018
282018
Tensile strained island growth at step-edges on GaAs (110)
PJ Simmonds, ML Lee
Applied Physics Letters 97 (15), 153101, 2010
262010
Improved quantum dot stacking for intermediate band solar cells using strain compensation
PJ Simmonds, M Sun, RB Laghumavarapu, B Liang, AG Norman, JW Luo, ...
Nanotechnology 25 (44), 445402, 2014
242014
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