Folgen
Thibault Sohier
Thibault Sohier
CNRS, Laboratoire Charles Coulomb, Montpellier
Bestätigte E-Mail-Adresse bei umontpellier.fr - Startseite
Titel
Zitiert von
Zitiert von
Jahr
Two-dimensional materials from high-throughput computational exfoliation of experimentally known compounds
N Mounet, M Gibertini, P Schwaller, D Campi, A Merkys, A Marrazzo, ...
Nature nanotechnology 13 (3), 246-252, 2018
16382018
Density functional perturbation theory for gated two-dimensional heterostructures: Theoretical developments and application to flexural phonons in graphene
T Sohier, M Calandra, F Mauri
Physical Review B 96 (7), 075448, 2017
2542017
Electron–phonon interactions and the intrinsic electrical resistivity of graphene
CH Park, N Bonini, T Sohier, G Samsonidze, B Kozinsky, M Calandra, ...
Nano letters 14 (3), 1113-1119, 2014
1962014
Two-dimensional Fröhlich interaction in transition-metal dichalcogenide monolayers: Theoretical modeling and first-principles calculations
T Sohier, M Calandra, F Mauri
Physical Review B 94 (8), 085415, 2016
1952016
Breakdown of optical phonons' splitting in two-dimensional materials
T Sohier, M Gibertini, M Calandra, F Mauri, N Marzari
Nano Letters 17 (6), 3758-3763, 2017
1582017
Phonon-limited resistivity of graphene by first-principles calculations: Electron-phonon interactions, strain-induced gauge field, and Boltzmann equation
T Sohier, M Calandra, CH Park, N Bonini, N Marzari, F Mauri
Physical Review B 90 (12), 125414, 2014
1462014
Mobility of two-dimensional materials from first principles in an accurate and automated framework
T Sohier, D Campi, N Marzari, M Gibertini
Physical Review Materials 2 (11), 114010, 2018
1382018
Enhanced electron-phonon interaction in multivalley materials
T Sohier, E Ponomarev, M Gibertini, H Berger, N Marzari, N Ubrig, ...
Physical Review X 9 (3), 031019, 2019
932019
Hot-carrier cooling in high-quality graphene is intrinsically limited by optical phonons
EAA Pogna, X Jia, A Principi, A Block, L Banszerus, J Zhang, X Liu, ...
ACS nano 15 (7), 11285-11295, 2021
612021
Extraordinary high room-temperature carrier mobility in graphene-WSe heterostructures
L Banszerus, T Sohier, A Epping, F Winkler, F Libisch, F Haupt, ...
arXiv preprint arXiv:1909.09523, 2019
402019
Valley-engineering mobilities in two-dimensional materials
T Sohier, M Gibertini, D Campi, G Pizzi, N Marzari
Nano letters 19 (6), 3723-3729, 2019
302019
Electron mobility in monolayer WS2 encapsulated in hexagonal boron-nitride
Y Wang, T Sohier, K Watanabe, T Taniguchi, MJ Verstraete, E Tutuc
Applied Physics Letters 118 (10), 2021
292021
Density-functional calculation of static screening in two-dimensional materials: The long-wavelength dielectric function of graphene
T Sohier, M Calandra, F Mauri
Physical Review B 91 (16), 165428, 2015
272015
Ultralow-voltage design of graphene PN junction quantum reflective switch transistor
T Sohier, B Yu
Applied Physics Letters 98 (21), 2011
182011
Remote free-carrier screening to boost the mobility of Fröhlich-limited two-dimensional semiconductors
T Sohier, M Gibertini, MJ Verstraete
Physical Review Materials 5 (2), 024004, 2021
172021
Profiling novel high-conductivity 2D semiconductors
T Sohier, M Gibertini, N Marzari
2D Materials 8 (1), 015025, 2020
122020
Electrons and phonons in graphene: electron-phonon coupling, screening and transport in the field effect setup
T Sohier
Université Pierre et Marie Curie-Paris VI, 2015
122015
Electron-phonon interaction and phonon frequencies in two-dimensional doped semiconductors
F Macheda, T Sohier, P Barone, F Mauri
Physical Review B 107 (9), 094308, 2023
92023
Electric field exfoliation and high-TC superconductivity in field-effect hole-doped hydrogenated diamond (111)
D Romanin, T Sohier, D Daghero, F Mauri, RS Gonnelli, M Calandra
Applied Surface Science 496, 143709, 2019
92019
Infrared-active phonons in one-dimensional materials and their spectroscopic signatures
N Rivano, N Marzari, T Sohier
npj Computational Materials 9 (1), 194, 2023
52023
Das System kann den Vorgang jetzt nicht ausführen. Versuchen Sie es später erneut.
Artikel 1–20