| Photoluminescence of Si-rich silicon nitride: Defect-related states and silicon nanoclusters M Wang, D Li, Z Yuan, D Yang, D Que Applied physics letters 90 (13), 2007 | 171 | 2007 |
| High power efficiency in Si-nc/SiO2 multilayer light emitting devices by bipolar direct tunneling A Marconi, A Anopchenko, M Wang, G Pucker, P Bellutti, L Pavesi Applied Physics Letters 94 (22), 2009 | 139 | 2009 |
| Low-voltage onset of electroluminescence in nanocrystalline-Si/SiO2 multilayers A Anopchenko, A Marconi, E Moser, S Prezioso, M Wang, L Pavesi, ... Journal of applied physics 106 (3), 2009 | 103 | 2009 |
| Light emitting devices based on nanocrystalline-silicon multilayer structure M Wang, A Anopchenko, A Marconi, E Moser, S Prezioso, L Pavesi, ... Physica E: Low-dimensional Systems and Nanostructures 41 (6), 912-915, 2009 | 64 | 2009 |
| Electroluminescence of SnO2∕ p-Si heterojunction Z Yuan, D Li, M Wang, P Chen, D Gong, P Cheng, D Yang Applied Physics Letters 92 (12), 2008 | 64 | 2008 |
| Graded-size Si quantum dot ensembles for efficient light-emitting diodes A Anopchenko, A Marconi, M Wang, G Pucker, P Bellutti, L Pavesi Applied Physics Letters 99 (18), 2011 | 50 | 2011 |
| Superlinear photovoltaic effect in Si nanocrystals based metal-insulator-semiconductor devices S Prezioso, SM Hossain, A Anopchenko, L Pavesi, M Wang, G Pucker, ... Applied Physics Letters 94 (6), 2009 | 44 | 2009 |
| Light emission properties and mechanism of low-temperature prepared amorphous SiNx films. I. Room-temperature band tail states photoluminescence M Wang, M Xie, L Ferraioli, Z Yuan, D Li, D Yang, L Pavesi Journal of Applied Physics 104 (8), 2008 | 43 | 2008 |
| Light emission properties and mechanism of low-temperature prepared amorphous SiNx films. II. Defect states electroluminescence M Wang, J Huang, Z Yuan, A Anopchenko, D Li, D Yang, L Pavesi Journal of Applied Physics 104 (8), 2008 | 43 | 2008 |
| Photoluminescence of Tb3+ doped SiNx films grown by plasma-enhanced chemical vapor deposition Z Yuan, D Li, M Wang, P Chen, D Gong, L Wang, D Yang Journal of applied physics 100 (8), 2006 | 37 | 2006 |
| Photoluminescence of silicon nanocrystals in silicon oxide L Ferraioli, M Wang, G Pucker, D Navarro-Urrios, N Daldosso, ... Journal of Nanomaterials 2007, 2007 | 35 | 2007 |
| Correlation between luminescence and structural evolution of Si-rich silicon oxide film annealed at different temperatures M Wang, D Yang, D Li, Z Yuan, D Que Journal of applied physics 101 (10), 2007 | 34 | 2007 |
| Optical properties of single-phase β-FeSi2 films fabricated by electron beam evaporation D Gong, D Li, Z Yuan, M Wang, D Yang Applied surface science 254 (15), 4875-4878, 2008 | 20 | 2008 |
| Enhanced photoluminescence of Tb3+ in SnO2 film by phosphorus diffusion process Z Yuan, D Li, Z Liu, X Li, M Wang, P Cheng, P Chen, D Yang Journal of alloys and compounds 474 (1-2), 246-249, 2009 | 18 | 2009 |
| Localized surface plasmon resonance enhanced photoluminescence from SiNx with different N/Si ratios F Wang, M Wang, D Li, D Yang Optical Materials Express 2 (10), 1437-1448, 2012 | 11 | 2012 |
| Low dimensional silicon structures for photonic and sensor applications R Adamo, A Anopchenko, P Bettotti, M Cazzanelli, E D’Amato, ... Applied surface science 255 (3), 624-627, 2008 | 11 | 2008 |
| Optical and xerographic properties of phthalocyanine codeposited composite film and ultrathin multilayered structure MS Xu, JB Xu, M Wang, DL Que Journal of applied physics 91 (2), 748-752, 2002 | 10 | 2002 |
| Photoluminescence of Tb3+-doped SiNx films with different Si concentrations Z Yuan, D Li, M Wang, D Gong, P Cheng, P Chen, D Yang Materials Science and Engineering: B 146 (1-3), 126-130, 2008 | 7 | 2008 |
| Electron-beam-induced current evidence for room-temperature photoluminescence of silicon pn diode Z Yuan, D Li, M Wang, D Gong, R Fan, D Yang Vacuum 82 (11), 1337-1340, 2008 | 5 | 2008 |
| Effects of defect, carrier concentration and annealing process on the photoluminescence of silicon pn diodes Z Yuan, D Li, D Gong, M Wang, R Fan, D Yang Materials science in semiconductor processing 10 (4-5), 173-178, 2007 | 4 | 2007 |
