Effect of p-type last barrier on efficiency droop of blue InGaN light-emitting diodes YK Kuo, MC Tsai, SH Yen, TC Hsu, YJ Shen
IEEE Journal of Quantum Electronics 46 (8), 1214-1220, 2010
125 2010 Improvement in light-output efficiency of near-ultraviolet InGaN–GaN LEDs fabricated on stripe patterned sapphire substrates YJ Lee, TC Hsu, HC Kuo, SC Wang, YL Yang, SN Yen, YT Chu, YJ Shen, ...
Materials Science and Engineering: B 122 (3), 184-187, 2005
89 2005 A scatterometer for measuring the bidirectional reflectance and transmittance of semiconductor wafers with rough surfaces YJ Shen, QZ Zhu, ZM Zhang
Review of scientific instruments 74 (11), 4885-4892, 2003
87 2003 Effect of n-type AlGaN layer on carrier transportation and efficiency droop of blue InGaN light-emitting diodes SH Yen, MC Tsai, ML Tsai, YJ Shen, TC Hsu, YK Kuo
IEEE photonics technology letters 21 (14), 975-977, 2009
84 2009 Bidirectional reflectance distribution function of rough silicon wafers YJ Shen, ZM Zhang, BK Tsai, DP DeWitt
International Journal of Thermophysics 22, 1311-1326, 2001
65 2001 A Monte Carlo model for predicting the effective emissivity of the silicon wafer in rapid thermal processing furnaces YH Zhou, YJ Shen, ZM Zhang, BK Tsai, DP DeWitt
International Journal of Heat and Mass Transfer 45 (9), 1945-1949, 2002
52 2002 Three dimensional numerical study on the efficiency of a core-shell InGaN/GaN multiple quantum well nanowire light-emitting diodes CK Li, HC Yang, TC Hsu, YJ Shen, AS Liu, YR Wu
Journal of Applied Physics 113 (18), 2013
35 2013 Enhancement of light power for blue InGaN LEDs by using low-indium-content InGaN barriers YK Kuo, MC Tsai, SH Yen, TC Hsu, YJ Shen
IEEE Journal of Selected Topics in Quantum Electronics 15 (4), 1115-1121, 2009
31 2009 Theoretical investigation of Auger recombination on internal quantum efficiency of blue light-emitting diodes SH Yen, MC Tsai, ML Tsai, YJ Shen, TC Hsu, YK Kuo
Applied Physics A 97, 705-708, 2009
22 2009 Room-temperature, mid-infrared electroluminescence from single-stage intersubband -based edge emitters DP Xu, A Mirabedini, M D’Souza, S Li, D Botez, A Lyakh, YJ Shen, P Zory, ...
Applied physics letters 85 (20), 4573-4575, 2004
20 2004 Method of manufacturing a semiconductor structure and separating the semiconductor from a substrate S Chang, Y Hung-Chi, YJ Shen
US Patent 8,664,087, 2014
16 2014 Optoelectronic device and method for manufacturing the same WC Peng, TC Hsu, YJ Shen, CF Tsai
US Patent 8,344,409, 2013
14 2013 InGaN LEDs prepared on beta-Ga2O3 (-201) substrates K Iizuka, Y Morishima, A Kuramata, YJ Shen, CY Tsai, YY Su, G Liu, ...
Gallium Nitride Materials and Devices X 9363, 267-272, 2015
11 2015 Design and characterization of a bidirectional reflectometer YJ Shen, ZM Zhang
International Heat Transfer Conference Digital Library, 2002
9 2002 Impact of directional properties on the radiometric temperature measurement in rapid thermal processing YH Zhou, YJ Shen, ZM Zhang, BK Tsai, DP DeWitt
the 8th International Conference on Advanced. Thermal Processing of …, 2000
8 2000 Semiconductor power device Y Ya-Yu, YJ Shen, CC Liu
US Patent 10,290,730, 2019
7 2019 Semiconductor light-emitting device and manufacturing method thereof SN Yen, JT Chiu, YJ Shen, CF Tsai
US Patent 7,615,773, 2009
7 2009 Light-emitting diode structure HC Yang, MC Hsu, TC Hsu, CC Yang, TY Tang, YS Chen, WY Shiao, ...
US Patent App. 13/008,702, 2011
6 2011 High electron mobility transistor and methods for manufacturing the same TU Shang-Ju, CC Liu, TC Chang, Y Ya-Yu, YJ Shen, JI Chyi
US Patent 11,049,961, 2021
3 2021 Monte Carlo Simulation for Radiometric Temperature Measurement in Rapid Thermal Processing YH Zhou, YJ Shen, ZM Zhang, BK Tsai, DP DeWitt
ASME International Mechanical Engineering Congress and Exposition 26638, 187-190, 2000
2 2000