Luca Donetti
Luca Donetti
Departamento de Electrónica, Universidad de Granada
Bestätigte E-Mail-Adresse bei
Zitiert von
Zitiert von
Detecting network communities: a new systematic and efficient algorithm
L Donetti, MA Munoz
Journal of Statistical Mechanics: Theory and Experiment 2004 (10), P10012, 2004
Entangled networks, synchronization, and optimal network topology
L Donetti, PI Hurtado, MA Munoz
Physical Review Letters 95 (18), 188701, 2005
Trophic coherence determines food-web stability
S Johnson, V Domínguez-García, L Donetti, MA Muñoz
Proceedings of the National Academy of Sciences 111 (50), 17923-17928, 2014
Optimal network topologies: expanders, cages, Ramanujan graphs, entangled networks and all that
L Donetti, F Neri, MA Munoz
Journal of Statistical Mechanics: Theory and Experiment 2006 (08), P08007, 2006
A comprehensive study of the corner effects in Pi-gate MOSFETs including quantum effects
FJG Ruiz, A Godoy, F Gamiz, C Sampedro, L Donetti
IEEE Transactions on Electron Devices 54 (12), 3369-3377, 2007
Acoustic phonon confinement in silicon nanolayers: Effect on electron mobility
L Donetti, F Gámiz, JB Roldán, A Godoy
Journal of Applied Physics 100 (1), 2006
Improved spectral algorithm for the detection of network communities
L Donetti, MA Muñoz
arXiv preprint physics/0504059, 2005
Influence of acoustic phonon confinement on electron mobility in ultrathin silicon on insulator layers
L Donetti, F Gámiz, N Rodriguez, F Jimenez, C Sampedro
Applied physics letters 88 (12), 2006
Modeling the equivalent oxide thickness of surrounding gate SOI devices with high-κ insulators
IM Tienda-Luna, FJG Ruiz, L Donetti, A Godoy, F Gámiz
Solid-State Electronics 52 (12), 1854-1860, 2008
Equivalent Oxide Thickness of Trigate SOI MOSFETs With High- Insulators
FJG Ruiz, IM Tienda-Luna, A Godoy, L Donetti, F Gámiz
IEEE Transactions on Electron Devices 56 (11), 2711-2719, 2009
Hole effective mass in silicon inversion layers with different substrate orientations and channel directions
L Donetti, F Gámiz, S Thomas, TE Whall, DR Leadley, PE Hellström, ...
Journal of Applied Physics 110 (6), 2011
Network synchronization: optimal and pessimal scale-free topologies
L Donetti, PI Hurtado, MA Munoz
Journal of Physics A: Mathematical and Theoretical 41 (22), 224008, 2008
Simulation of hole mobility in two-dimensional systems
L Donetti, F Gamiz, N Rodriguez
Semiconductor science and technology 24 (3), 035016, 2009
Reaching sub-32 nm nodes: ET-FDSOI and BOX optimization
C Sampedro, F Gámiz, L Donetti, A Godoy
Solid-State Electronics 70, 101-105, 2012
Hole transport in DGSOI devices: Orientation and silicon thickness effects
L Donetti, F Gámiz, N Rodriguez, F Jiménez-Molinos, JB Roldán
Solid-state electronics 54 (2), 191-195, 2010
Hole mobility in ultrathin double-gate SOI devices: the effect of acoustic phonon confinement
L Donetti, F Gamiz, N Rodriguez, A Godoy
IEEE electron device letters 30 (12), 1338-1340, 2009
A model of the gate capacitance of surrounding gate transistors: Comparison with double-gate MOSFETs
FJG Ruiz, IM Tienda-Luna, A Godoy, L Donetti, F Gamiz
IEEE transactions on electron devices 57 (10), 2477-2483, 2010
Inversion charge modeling in n-type and p-type Double-Gate MOSFETs including quantum effects: The role of crystallographic orientation
M Balaguer, JB Roldan, L Donetti, F Gamiz
Solid-state electronics 67 (1), 30-37, 2012
Coulomb scattering in high-κ gate stack silicon-on-insulator metal-oxide-semiconductor field effect transistors
F Jiménez-Molinos, F Gámiz, L Donetti
Journal of Applied Physics 104 (6), 2008
Lee-Yang zeros and the Ising model on the Sierpinski gasket
R Burioni, D Cassi, L Donetti
Journal of Physics A: Mathematical and General 32 (27), 5017, 1999
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