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Nguyen Tien Son
Nguyen Tien Son
professor i semiconductor physics, Linköping University
Bestätigte E-Mail-Adresse bei ifm.liu.se
Titel
Zitiert von
Zitiert von
Jahr
Coherent control of single spins in silicon carbide at room temperature
M Widmann, SY Lee, T Rendler, NT Son, H Fedder, S Paik, LP Yang, ...
Nature materials 14 (2), 164-168, 2015
6602015
Isolated electron spins in silicon carbide with millisecond coherence times
DJ Christle, AL Falk, P Andrich, PV Klimov, JU Hassan, NT Son, E Janzén, ...
Nature materials 14 (2), 160-163, 2015
5182015
Deep level defects in electron-irradiated SiC epitaxial layers
C Hemmingsson, NT Son, O Kordina, JP Bergman, E Janzén, ...
Journal of Applied Physics 81 (9), 6155-6159, 1997
3611997
Silicon vacancy related defect in 4H and 6H SiC
E Sörman, NT Son, WM Chen, O Kordina, C Hallin, E Janzén
Physical Review B 61 (4), 2613, 2000
2992000
Negative- System of Carbon Vacancy in -SiC
NT Son, XT Trinh, LS Løvlie, BG Svensson, K Kawahara, J Suda, ...
Physical review letters 109 (18), 187603, 2012
2792012
Divacancy in 4h-sic
NT Son, P Carlsson, J Ul Hassan, E Janzén, T Umeda, J Isoya, A Gali, ...
Physical review letters 96 (5), 055501, 2006
2592006
Isolated spin qubits in SiC with a high-fidelity infrared spin-to-photon interface
DJ Christle, PV Klimov, CF de las Casas, K Szász, V Ivády, ...
Physical Review X 7 (2), 021046, 2017
2422017
Electrically active defects in n-type 4H–silicon carbide grown in a vertical hot-wall reactor
J Zhang, L Storasta, JP Bergman, NT Son, E Janzén
Journal of Applied Physics 93 (8), 4708-4714, 2003
2312003
Electrical and optical control of single spins integrated in scalable semiconductor devices
CP Anderson, A Bourassa, KC Miao, G Wolfowicz, PJ Mintun, AL Crook, ...
Science 366 (6470), 1225-1230, 2019
2292019
High-fidelity spin and optical control of single silicon-vacancy centres in silicon carbide
R Nagy, M Niethammer, M Widmann, YC Chen, P Udvarhelyi, C Bonato, ...
Nature communications 10 (1), 1-8, 2019
2292019
Scalable quantum photonics with single color centers in silicon carbide
M Radulaski, M Widmann, M Niethammer, JL Zhang, SY Lee, T Rendler, ...
Nano letters 17 (3), 1782-1786, 2017
1952017
Growth of SiC by “Hot‐Wall” CVD and HTCVD
O Kordina, C Hallin, A Henry, JP Bergman, I Ivanov, A Ellison, NT Son, ...
physica status solidi (b) 202 (1), 321-334, 1997
1941997
Negative-U centers in 4H silicon carbide
CG Hemmingsson, NT Son, A Ellison, J Zhang, E Janzén
Physical Review B 58 (16), R10119, 1998
1831998
Entanglement and control of single nuclear spins in isotopically engineered silicon carbide
A Bourassa, CP Anderson, KC Miao, M Onizhuk, H Ma, AL Crook, H Abe, ...
Nature Materials 19 (12), 1319-1325, 2020
1572020
Electron effective masses in 4H SiC
NT Son, WM Chen, O Kordina, AO Konstantinov, B Monemar, E Janzén, ...
Applied physics letters 66 (9), 1074-1076, 1995
1501995
Developing silicon carbide for quantum spintronics
NT Son, CP Anderson, A Bourassa, KC Miao, C Babin, M Widmann, ...
Applied Physics Letters 116 (19), 2020
1482020
Quantum properties of dichroic silicon vacancies in silicon carbide
R Nagy, M Widmann, M Niethammer, DBR Dasari, I Gerhardt, ÖO Soykal, ...
Physical Review Applied 9 (3), 034022, 2018
1312018
The silicon vacancy in SiC
E Janzén, A Gali, P Carlsson, A Gällström, B Magnusson, NT Son
Physica B: Condensed Matter 404 (22), 4354-4358, 2009
1302009
Carbon vacancy-related defect in 4H and 6H SiC
NT Son, PN Hai, E Janzén
Physical Review B 63 (20), 201201, 2001
1262001
Ab initio density-functional supercell calculations of hydrogen defects in cubic SiC
B Aradi, A Gali, P Deák, JE Lowther, NT Son, E Janzén, WJ Choyke
Physical Review B 63 (24), 245202, 2001
1232001
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