Eva Monroy
Eva Monroy
CEA, IRIG, PHELIQS-NPSC, Grenoble, France
Bestätigte E-Mail-Adresse bei - Startseite
Zitiert von
Zitiert von
Wide-bandgap semiconductor ultraviolet photodetectors
E Monroy, F Omnes, F Calle
Semiconductor science and technology 18, R33, 2003
The effect of the III/V ratio and substrate temperature on the morphology and properties of GaN-and AlN-layers grown by molecular beam epitaxy on Si(111)
MA Sanchez-Garcia, E Calleja, E Monroy, FJ Sanchez, F Calle, E Munoz, ...
Journal of crystal growth 183 (1), 23-30, 1998
III nitrides and UV detection
E Munoz, E Monroy, JL Pau, F Calle, F Omnes, P Gibart
Journal of Physics: Condensed Matter 13, 7115, 2001
Systematic experimental and theoretical investigation of intersubband absorption in GaN∕ AlN quantum wells
M Tchernycheva, L Nevou, L Doyennette, FH Julien, E Warde, F Guillot, ...
Physical Review B 73 (12), 125347, 2006
High-speed, low-noise metal–semiconductor–metal ultraviolet photodetectors based on GaN
D Walker, E Monroy, P Kung, J Wu, M Hamilton, FJ Sanchez, J Diaz, ...
Applied physics letters 74, 762, 1999
High-performance GaN pn junction photodetectors for solar ultraviolet applications
E Monroy, E Munoz, FJ Sánchez, F Calle, E Calleja, B Beaumont, P Gibart, ...
Semiconductor science and technology 13, 1042, 1998
GaN/AlN short-period superlattices for intersubband optoelectronics: A systematic study of their epitaxial growth, design, and performance
PK Kandaswamy, F Guillot, E Bellet-Amalric, E Monroy, L Nevou, ...
Journal of Applied Physics 104 (9), 093501, 2008
III-nitride semiconductors for intersubband optoelectronics: a review
M Beeler, E Trichas, E Monroy
Semiconductor Science and Technology 28 (7), 074022, 2013
AlGaN-based UV photodetectors
E Monroy, F Calle, JL Pau, E Munoz, F Omnes, B Beaumont, P Gibart
Journal of crystal growth 230 (3), 537-543, 2001
High-quality visible-blind AlGaN pin photodiodes
E Monroy, M Hamilton, D Walker, P Kung, FJ Sánchez, M Razeghi
Applied physics letters 74, 1171, 1999
Photoconductor gain mechanisms in GaN ultraviolet detectors
E Munoz, E Monroy, JA Garrido, I Izpura, FJ Sanchez, ...
Applied physics letters 71, 870, 1997
Growth of III-nitrides on Si (1 1 1) by molecular beam epitaxy Doping, optical, and electrical properties
E Calleja, MA Sánchez-Garcı́a, FJ Sánchez, F Calle, FB Naranjo, ...
Journal of crystal growth 201, 296-317, 1999
Photoconductive gain modelling of GaN photodetectors
JA Garrido, E Monroy, I Izpura, E Munoz
Semiconductor science and technology 13, 563, 1998
AlGaN metal–semiconductor–metal photodiodes
E Monroy, F Calle, E Munoz, F Omnes
Applied physics letters 74, 3401, 1999
Room-Temperature Photodetection Dynamics of Single GaN Nanowires
F González-Posada, R Songmuang, M Den Hertog, E Monroy
Nano Letters 12 (1), 172-176, 2012
Near infrared quantum cascade detector in GaN/AlGaN/AlN heterostructures
A Vardi, G Bahir, F Guillot, C Bougerol, E Monroy, SE Schacham, ...
Applied Physics Letters 92 (1), 011112, 2008
Intrinsic ferromagnetism in wurtzite (Ga, Mn) N semiconductor
E Sarigiannidou, F Wilhelm, E Monroy, RM Galera, E Bellet-Amalric, ...
Physical Review B 74 (4), 041306, 2006
Analysis and modeling of AlGaN-based Schottky barrier photodiodes
E Monroy, F Calle, JL Pau, FJ Sanchez, E Munoz, F Omnes, B Beaumont, ...
Journal of Applied Physics 88, 2081, 2000
Structure of GaN quantum dots grown under “modified Stranski–Krastanow” conditions on AlN
N Gogneau, D Jalabert, E Monroy, T Shibata, M Tanaka, B Daudin
Journal of applied physics 94, 2254, 2003
Wide bandgap UV photodetectors: A short review of devices and applications
F Omnès, E Monroy, E Muñoz, JL Reverchon
Proceedings of SPIE 6473, 64730E, 2007
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