Linear optical properties in the projector-augmented wave methodology M Gajdoš, K Hummer, G Kresse, J Furthmüller, F Bechstedt
Physical Review B—Condensed Matter and Materials Physics 73 (4), 045112, 2006
2743 2006 Absorption and emission of hexagonal InN. Evidence of narrow fundamental band gap VY Davydov, AA Klochikhin, RP Seisyan, VV Emtsev, SV Ivanov, ...
physica status solidi (b) 229 (3), r1-r3, 2002
1411 2002 Semiempirical van der Waals correction to the density functional description of solids and molecular structures F Ortmann, F Bechstedt, WG Schmidt
Physical Review B—Condensed Matter and Materials Physics 73 (20), 205101, 2006
845 2006 Quasiparticle band structure based on a generalized Kohn-Sham scheme F Fuchs, J Furthmüller, F Bechstedt, M Shishkin, G Kresse
Physical Review B—Condensed Matter and Materials Physics 76 (11), 115109, 2007
623 2007 Properties of strained wurtzite GaN and AlN: Ab initio studies JM Wagner, F Bechstedt
Physical Review B 66 (11), 115202, 2002
555 2002 Band gap, electronic structure, and surface electron accumulation of cubic and rhombohedral PDC King, TD Veal, F Fuchs, CY Wang, DJ Payne, A Bourlange, H Zhang, ...
Physical Review B—Condensed Matter and Materials Physics 79 (20), 205211, 2009
525 2009 First-principles study of ground- and excited-state properties of A Schleife, F Fuchs, J Furthmüller, F Bechstedt
Physical Review B—Condensed Matter and Materials Physics 73 (24), 245212, 2006
495 2006 Band gap of hexagonal InN and InGaN alloys VY Davydov, AA Klochikhin, VV Emtsev, DA Kurdyukov, SV Ivanov, ...
physica status solidi (b) 234 (3), 787-795, 2002
448 2002 Band Gap of InN and In‐Rich Inx Ga1—x N alloys (0.36 < x < 1) VY Davydov, AA Klochikhin, VV Emtsev, SV Ivanov, VV Vekshin, ...
physica status solidi (b) 230 (2), R4-R6, 2002
435 2002 Absolute surface energies of group-IV semiconductors: dependence on orientation and reconstruction AA Stekolnikov, J Furthmüller, F Bechstedt
Physical Review B 65 (11), 115318, 2002
414 2002 Principles of surface physics F Bechstedt
Springer Science & Business Media, 2012
383 2012 Polytypism and properties of silicon carbide F Bechstedt, P Käckell, A Zywietz, K Karch, B Adolph, K Tenelsen, ...
physica status solidi (b) 202 (1), 35-62, 1997
368 1997 Direct band gap wurtzite gallium phosphide nanowires S Assali, I Zardo, S Plissard, D Kriegner, MA Verheijen, G Bauer, ...
Nano letters 13 (4), 1559-1563, 2013
359 2013 Attracted by long-range electron correlation: adenine on graphite F Ortmann, WG Schmidt, F Bechstedt
Physical review letters 95 (18), 186101, 2005
338 2005 Quasiparticle band structures of the antiferromagnetic transition-metal oxides MnO, FeO, CoO, and NiO C Rödl, F Fuchs, J Furthmüller, F Bechstedt
Physical Review B—Condensed Matter and Materials Physics 79 (23), 235114, 2009
324 2009 Direct-bandgap emission from hexagonal Ge and SiGe alloys EMT Fadaly, A Dijkstra, JR Suckert, D Ziss, MAJ Van Tilburg, C Mao, ...
Nature 580 (7802), 205-209, 2020
319 2020 Optical properties of semiconductors using projector-augmented waves B Adolph, J Furthmüller, F Bechstedt
Physical Review B 63 (12), 125108, 2001
319 2001 Ab initio lattice dynamics of BN and AlN: Covalent versus ionic forces K Karch, F Bechstedt
Physical Review B 56 (12), 7404, 1997
315 1997 Indium-oxide polymorphs from first principles: Quasiparticle electronic states F Fuchs, F Bechstedt
Physical Review B—Condensed Matter and Materials Physics 77 (15), 155107, 2008
308 2008 Semiconductor surfaces and interfaces: their atomic and electronic structures F Bechstedt, R Enderlein
De Gruyter, 1988
302 1988 