Fabrice Oehler
Fabrice Oehler
CNRS researcher, Centre for Nanosciences and Nanotechnologies, Université Paris-Saclay (France)
Bestätigte E-Mail-Adresse bei
Zitiert von
Zitiert von
Control of gold surface diffusion on Si nanowires
MI den Hertog, JL Rouviere, F Dhalluin, PJ Desré, P Gentile, P Ferret, ...
Nano letters 8 (5), 1544-1550, 2008
Epitaxy Of GaN Nanowires On Graphene
V Kumaresan, L Largeau, A Madouri, F Glas, H Zhang, F Oehler, ...
Nano Letters, 2016
Sharpening the Interfaces of Axial Heterostructures in Self-Catalyzed AlGaAs Nanowires: Experiment and Theory
G Priante, F Glas, G Patriarche, K Pantzas, F Oehler, JC Harmand
Nano letters 16 (3), 1917-1924, 2016
Effect of HCl on the doping and shape control of silicon nanowires
P Gentile, A Solanki, N Pauc, F Oehler, B Salem, G Rosaz, T Baron, ...
Nanotechnology 23 (21), 215702, 2012
Measuring and modeling the growth dynamics of self-catalyzed GaP nanowire arrays
F Oehler, A Cattoni, A Scaccabarozzi, G Patriarche, F Glas, JC Harmand
Nano letters 18 (2), 701-708, 2018
Structural, electronic, and optical properties of m-plane InGaN/GaN quantum wells: Insights from experiment and atomistic theory
S Schulz, DP Tanner, EP O'Reilly, MA Caro, TL Martin, PAJ Bagot, ...
Physical Review B 92 (23), 235419, 2015
Abrupt GaP/GaAs Interfaces in Self-Catalyzed Nanowires
G Priante, G Patriarche, F Oehler, F Glas, JC Harmand
Nano letters 15 (9), 6036-6041, 2015
The impact of trench defects in InGaN/GaN light emitting diodes and implications for the “green gap” problem
FCP Massabuau, MJ Davies, F Oehler, SK Pamenter, EJ Thrush, ...
Applied physics letters 105 (11), 2014
Surface recombination velocity measurements of efficiently passivated gold-catalyzed silicon nanowires by a new optical method
O Demichel, V Calvo, A Besson, P Noé, B Salem, N Pauc, F Oehler, ...
Nano letters 10 (7), 2323-2329, 2010
The importance of the radial growth in the faceting of silicon nanowires
F Oehler, P Gentile, T Baron, P Ferret, M Den Hertog, J Rouviere
Nano letters 10 (7), 2335-2341, 2010
The effects of HCl on silicon nanowire growth: surface chlorination and existence of a'diffusion-limited minimum diameter'
F Oehler, P Gentile, T Baron, P Ferret
Nanotechnology 20 (47), 475307, 2009
Interface dipole and band bending in the hybrid heterojunction
H Henck, Z Ben Aziza, O Zill, D Pierucci, CH Naylor, MG Silly, N Gogneau, ...
Physical Review B 96 (11), 115312, 2017
Indium clustering in a-plane InGaN quantum wells as evidenced by atom probe tomography
F Tang, T Zhu, F Oehler, WY Fu, JT Griffiths, FCP Massabuau, ...
Applied Physics Letters 106 (7), 2015
Non-polar (11-20) InGaN quantum dots with short exciton lifetimes grown by metal-organic vapor phase epitaxy
T Zhu, F Oehler, BPL Reid, RM Emery, RA Taylor, MJ Kappers, RA Oliver
Applied Physics Letters 102, 251905, 2013
Structure and strain relaxation effects of defects in InxGa1− xN epilayers
SL Rhode, WY Fu, MA Moram, FCP Massabuau, MJ Kappers, ...
Journal of Applied Physics 116 (10), 2014
Surface morphology of homoepitaxial c-plane GaN: Hillocks and ridges
F Oehler, T Zhu, S Rhode, MJ Kappers, CJ Humphreys, RA Oliver
Journal of Crystal Growth 383, 12-18, 2013
Hidden defects in silicon nanowires
MI Den Hertog, C Cayron, P Gentile, F Dhalluin, F Oehler, T Baron, ...
Nanotechnology 23 (2), 025701, 2011
Determination of n-Type Doping Level in Single GaAs Nanowires by Cathodoluminescence
HL Chen, C Himwas, A Scaccabarozzi, P Rale, F Oehler, A Lemaître, ...
Nano letters 17 (11), 6667-6675, 2017
Self-induced growth of vertical GaN nanowires on silica
V Kumaresan, L Largeau, F Oehler, H Zhang, O Mauguin, F Glas, ...
Nanotechnology 27 (13), 135602, 2016
Indirect to direct band gap crossover in two-dimensional WS2(1−x)Se2x alloys
C Ernandes, L Khalil, H Almabrouk, D Pierucci, B Zheng, J Avila, P Dudin, ...
npj 2D Materials and Applications 5 (1), 7, 2021
Das System kann den Vorgang jetzt nicht ausführen. Versuchen Sie es später erneut.
Artikel 1–20