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Zhixian Zhou
Zhixian Zhou
Professor of Physics, Wayne State University
Bestätigte E-Mail-Adresse bei wayne.edu - Startseite
Titel
Zitiert von
Zitiert von
Jahr
Carbon dioxide gas sensor using a graphene sheet
HJ Yoon, JH Yang, Z Zhou, SS Yang, MMC Cheng
Sensors and Actuators B: Chemical 157 (1), 310-313, 2011
8132011
High Mobility WSe2 p- and n-Type Field-Effect Transistors Contacted by Highly Doped Graphene for Low-Resistance Contacts
HJ Chuang, X Tan, NJ Ghimire, MM Perera, B Chamlagain, MMC Cheng, ...
Nano letters 14 (6), 3594-3601, 2014
5142014
Low-Resistance 2D/2D Ohmic Contacts: A Universal Approach to High-Performance WSe2, MoS2, and MoSe2 Transistors
HJ Chuang, B Chamlagain, M Koehler, MM Perera, J Yan, D Mandrus, ...
Nano letters 16 (3), 1896-1902, 2016
4322016
Improved Carrier Mobility in Few-Layer MoS2 Field-Effect Transistors with Ionic-Liquid Gating
MM Perera, MW Lin, HJ Chuang, BP Chamlagain, C Wang, X Tan, ...
ACS nano 7 (5), 4449-4458, 2013
3922013
Polarized photocurrent response in black phosphorus field-effect transistors
T Hong, B Chamlagain, W Lin, HJ Chuang, M Pan, Z Zhou, YQ Xu
Nanoscale 6 (15), 8978-8983, 2014
3722014
Mobility Improvement and Temperature Dependence in MoSe2 Field-Effect Transistors on Parylene-C Substrate
B Chamlagain, Q Li, NJ Ghimire, HJ Chuang, MM Perera, H Tu, Y Xu, ...
ACS nano 8 (5), 5079-5088, 2014
2302014
Mobility enhancement and highly efficient gating of monolayer MoS2 transistors with polymer electrolyte
MW Lin, L Liu, Q Lan, X Tan, KS Dhindsa, P Zeng, VM Naik, MMC Cheng, ...
Journal of Physics D: Applied Physics 45 (34), 345102, 2012
1862012
Anisotropic photocurrent response at black phosphorus–MoS 2 p–n heterojunctions
T Hong, B Chamlagain, T Wang, HJ Chuang, Z Zhou, YQ Xu
Nanoscale 7 (44), 18537-18541, 2015
1482015
High-Performance WSe2 Phototransistors with 2D/2D Ohmic Contacts
T Wang, K Andrews, A Bowman, T Hong, M Koehler, J Yan, D Mandrus, ...
Nano letters 18 (5), 2766-2771, 2018
1282018
Room-temperature high on/off ratio in suspended graphene nanoribbon field-effect transistors
MW Lin, C Ling, Y Zhang, HJ Yoon, MMC Cheng, LA Agapito, N Kioussis, ...
Nanotechnology 22 (26), 265201, 2011
1182011
Ferromagnetism and magnetoresistance of Co–ZnO inhomogeneous magnetic semiconductors
S Yan, C Ren, X Wang, Y Xin, ZX Zhou, LM Mei, MJ Ren, YX Chen, ...
Appl. Phys. Lett. 84, 2376, 2004
1182004
Plasmonic Hot Electron Induced Photocurrent Response at MoS2–Metal Junctions
T Hong, B Chamlagain, S Hu, SM Weiss, Z Zhou, YQ Xu
Acs Nano 9 (5), 5357-5363, 2015
1142015
The effect of annealing on the electrical and thermal transport properties of macroscopic bundles of long multi-wall carbon nanotubes
R Jin, ZX Zhou, D Mandrus, IN Ivanov, G Eres, JY Howe, AA Puretzky, ...
Physica B: Condensed Matter 388 (1-2), 326-330, 2007
892007
Thermally Oxidized 2D TaS2 as a High-κ Gate Dielectric for MoS2 Field-Effect Transistors
PYCZZ Bhim Chamlagain, Qingsong Cui, Sagar Paudel, Mark Cheng
2D Materials, 2017
712017
Improved Contacts and Device Performance in MoS2 Transistors Using a 2D Semiconductor Interlayer
K Andrews, A Bowman, U Rijal, PY Chen, Z Zhou
ACS nano 14 (5), 6232-6241, 2020
672020
Colossal Magnetoresistance by Avoiding a Ferromagnetic State in the Mott System Ca 3 Ru 2 O 7
XN Lin, ZX Zhou, V Durairaj, P Schlottmann, G Cao
Physical review letters 95 (1), 017203, 2005
662005
Edge effects on the pH response of graphene nanoribbon field effect transistors
X Tan, HJ Chuang, MW Lin, Z Zhou, MMC Cheng
The Journal of Physical Chemistry C 117 (51), 27155-27160, 2013
622013
Vertically Stacked and Self-Encapsulated van der Waals Heterojunction Diodes Using Two-Dimensional Layered Semiconductors
CW Jinshui Miao, Zhihao Xu, Qing Li, Arthur Bowman, Suoming Zhang, Weida Hu ...
ACS Nano, 2017
612017
Enhanced electrochemical performance of graphene modified LiFePO4 cathode material for lithium ion batteries
KS Dhindsa, BP Mandal, K Bazzi, MW Lin, M Nazri, GA Nazri, VM Naik, ...
Solid State Ionics 253, 94-100, 2013
582013
Approaching the intrinsic band gap in suspended high-mobility graphene nanoribbons
MW Lin, C Ling, LA Agapito, N Kioussis, Y Zhang, MMC Cheng, WL Wang, ...
Physical Review B 84 (12), 125411, 2011
562011
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