| Inverted electron-hole alignment in InAs-GaAs self-assembled quantum dots PW Fry, IE Itskevich, DJ Mowbray, MS Skolnick, JJ Finley, JA Barker, ... Physical review letters 84 (4), 733, 2000 | 718 | 2000 |
| Improved performance of 1.3 μm multilayer InAs quantum-dot lasers using a high-growth-temperature GaAs spacer layer HY Liu, IR Sellers, TJ Badcock, DJ Mowbray, MS Skolnick, KM Groom, ... Applied Physics Letters 85 (5), 704-706, 2004 | 343 | 2004 |
| Nature of the Stranski-Krastanow transition during epitaxy of InGaAs on GaAs T Walther, AG Cullis, DJ Norris, M Hopkinson Physical Review Letters 86 (11), 2381, 2001 | 337 | 2001 |
| Determination of the shape and indium distribution of low-growth-rate InAs quantum dots by cross-sectional scanning tunneling microscopy DM Bruls, J Vugs, PM Koenraad, HWM Salemink, JH Wolter, ... Applied physics letters 81 (9), 1708-1710, 2002 | 293 | 2002 |
| Charged and neutral exciton complexes in individual self-assembled In (Ga) As quantum dots JJ Finley, AD Ashmore, A Lemaître, DJ Mowbray, MS Skolnick, ... Physical Review B 63 (7), 073307, 2001 | 242 | 2001 |
| Electronic energy levels and energy relaxation mechanisms in self-organized InAs/GaAs quantum dots MJ Steer, DJ Mowbray, WR Tribe, MS Skolnick, MD Sturge, M Hopkinson, ... Physical Review B 54 (24), 17738, 1996 | 228 | 1996 |
| Optimizing the growth of 1.3 μm InAs/InGaAs dots-in-a-well structure HY Liu, M Hopkinson, CN Harrison, MJ Steer, R Frith, IR Sellers, ... Journal of applied physics 93 (5), 2931-2936, 2003 | 220 | 2003 |
| Observation of multicharged excitons and biexcitons in a single InGaAs quantum dot JJ Finley, PW Fry, AD Ashmore, A Lemaître, AI Tartakovskii, R Oulton, ... Physical Review B 63 (16), 161305, 2001 | 206 | 2001 |
| Emission spectra and mode structure of InAs/GaAs self-organized quantum dot lasers L Harris, DJ Mowbray, MS Skolnick, M Hopkinson, G Hill Applied physics letters 73 (7), 969-971, 1998 | 198 | 1998 |
| Nuclear spin switch in semiconductor quantum dots AI Tartakovskii, T Wright, A Russell, VI Fal’Ko, AB Van’Kov, ... Physical Review Letters 98 (2), 026806, 2007 | 195 | 2007 |
| Experimental investigation of the effect of wetting-layer states on the gain–current characteristic of quantum-dot lasers DR Matthews, HD Summers, PM Smowton, M Hopkinson Applied Physics Letters 81 (26), 4904-4906, 2002 | 187 | 2002 |
| Fast optical preparation, control, and readout of a single quantum dot spin AJ Ramsay, SJ Boyle, RS Kolodka, JBB Oliveira, J Skiba-Szymanska, ... Physical review letters 100 (19), 197401, 2008 | 181 | 2008 |
| Long-wavelength light emission and lasing from InAs∕ GaAs quantum dots covered by a GaAsSb strain-reducing layer HY Liu, MJ Steer, TJ Badcock, DJ Mowbray, MS Skolnick, P Navaretti, ... Applied Physics Letters 86 (14), 2005 | 180 | 2005 |
| Quantum-confined Stark shifts of charged exciton complexes in quantum dots JJ Finley, M Sabathil, P Vogl, G Abstreiter, R Oulton, AI Tartakovskii, ... Physical Review B—Condensed Matter and Materials Physics 70 (20), 201308, 2004 | 169 | 2004 |
| High-performance three-layer 1.3-μm InAs-GaAs quantum-dot lasers with very low continuous-wave room-temperature threshold currents HY Liu, DT Childs, TJ Badcock, KM Groom, IR Sellers, M Hopkinson, ... IEEE Photonics Technology Letters 17 (6), 1139-1141, 2005 | 166 | 2005 |
| Stranski-Krastanow transition and epitaxial island growth AG Cullis, DJ Norris, T Walther, MA Migliorato, M Hopkinson Physical Review B 66 (8), 081305, 2002 | 163 | 2002 |
| Fine structure of charged and neutral excitons in InAs-Al 0.6 Ga 0.4 As quantum dots JJ Finley, DJ Mowbray, MS Skolnick, AD Ashmore, C Baker, AFG Monte, ... Physical Review B 66 (15), 153316, 2002 | 160 | 2002 |
| 1.3 µm InAs/GaAs multilayer quantum-dot laser with extremely low room-temperature threshold current density IR Sellers, HY Liu, KM Groom, DT Childs, D Robbins, TJ Badcock, ... Electronics Letters 40 (22), 1412-1413, 2004 | 159 | 2004 |
| Mode structure of the L3 photonic crystal cavity ARA Chalcraft, S Lam, D O’Brien, TF Krauss, M Sahin, D Szymanski, ... Applied physics letters 90 (24), 2007 | 153 | 2007 |
| InGaAs∕ AlAsSb∕ InP quantum cascade lasers operating at wavelengths close to 3μm DG Revin, JW Cockburn, MJ Steer, RJ Airey, M Hopkinson, AB Krysa, ... Applied Physics Letters 90 (2), 2007 | 145 | 2007 |
M S SkolnickProfessor of Physics, University of SheffieldBestätigte E-Mail-Adresse bei sheffield.ac.uk
