Folgen
René H.J. Vervuurt
René H.J. Vervuurt
ASM
Bestätigte E-Mail-Adresse bei asm.com
Titel
Zitiert von
Zitiert von
Jahr
Method for fabricating layer structure having target topological profile
E Shiba, Y Ota, RHJ Vervuurt, N Kobayashi, A Kobayashi
US Patent 11,961,741, 2024
1802024
Atomic layer deposition for graphene device integration
RHJ Vervuurt, WMM Kessels, AA Bol
Advanced Materials Interfaces 4 (18), 1700232, 2017
1172017
Atomic layer deposition of Pd and Pt nanoparticles for catalysis: on the mechanisms of nanoparticle formation
AJM Mackus, MJ Weber, NFW Thissen, D Garcia-Alonso, RHJ Vervuurt, ...
Nanotechnology 27 (3), 034001, 2015
1072015
High‐efficiency InP‐based photocathode for hydrogen production by interface energetics design and photon management
L Gao, Y Cui, RHJ Vervuurt, D van Dam, RPJ van Veldhoven, ...
Advanced functional materials 26 (5), 679-686, 2016
882016
Uniform Atomic Layer Deposition of Al2O3 on Graphene by Reversible Hydrogen Plasma Functionalization
RHJ Vervuurt, B Karasulu, MA Verheijen, WEMM Kessels, AA Bol
Chemistry of Materials 29 (5), 2090-2100, 2017
812017
Continuous and ultrathin platinum films on graphene using atomic layer deposition: a combined computational and experimental study
B Karasulu, RHJ Vervuurt, WMM Kessels, AA Bol
Nanoscale 8 (47), 19829-19845, 2016
472016
Area-selective atomic layer deposition of platinum using photosensitive polyimide
RHJ Vervuurt, A Sharma, Y Jiao, WEMM Kessels, AA Bol
Nanotechnology 27 (40), 405302, 2016
452016
Stability of CoPx Electrocatalysts in Continuous and Interrupted Acidic Electrolysis of Water
A Goryachev, L Gao, Y Zhang, RY Rohling, RHJ Vervuurt, AA Bol, ...
ChemElectroChem 5 (8), 1230-1239, 2018
432018
In Situ Monitoring of Surface Reactions during Atomic Layer Etching of Silicon Nitride Using Hydrogen Plasma and Fluorine Radicals
K Nakane, RHJ Vervuurt, T Tsutsumi, N Kobayashi, M Hori
ACS applied materials & interfaces 11 (40), 37263-37269, 2019
332019
In-situ Raman spectroscopy to elucidate the influence of adsorption in graphene electrochemistry
WTE van den Beld, M Odijk, RHJ Vervuurt, JW Weber, AA Bol, ...
Scientific reports 7 (1), 45080, 2017
282017
Graphene devices with bottom-up contacts by area-selective atomic layer deposition
NFW Thissen, RHJ Vervuurt, AJM Mackus, JJL Mulders, JW Weber, ...
2D Materials 4 (2), 025046, 2017
272017
Mechanistic studies of hydrogen transport through Mo2C/V composite membranes
CA Wolden, K Adeyemo, RHJ Vervuurt, M Ostwal, JD Way
Journal of membrane science 427, 150-154, 2013
272013
The effect of residual gas scattering on Ga ion beam patterning of graphene
NFW Thissen, RHJ Vervuurt, JJL Mulders, JW Weber, WMM Kessels, ...
Applied Physics Letters 107 (21), 2015
222015
Broadband optical response of graphene measured by terahertz time-domain spectroscopy and FTIR spectroscopy
K Arts, R Vervuurt, A Bhattacharya, J Gómez Rivas, JW Oosterbeek, ...
Journal of Applied Physics 124 (7), 2018
122018
Pt–graphene contacts fabricated by plasma functionalization and atomic layer deposition
RHJ Vervuurt, B Karasulu, NFW Thissen, Y Jiao, JW Weber, ...
Advanced Materials Interfaces 5 (13), 1800268, 2018
122018
Diffraction enhanced transparency in a hybrid gold-graphene THz metasurface
NJJ van Hoof, SET ter Huurne, RHJ Vervuurt, AA Bol, A Halpin, ...
APL Photonics 4 (3), 2019
72019
Reaction Mechanism and Selectivity Control of Si Compound ALE Based on Plasma Modification and F-Radical Exposure
RHJ Vervuurt, B Mukherjee, K Nakane, T Tsutsumi, M Hori, N Kobayashi
Langmuir 37 (43), 12663-12672, 2021
62021
Bottom-up meets top-down: tailored raspberry-like Fe 3 O 4–Pt nanocrystal superlattices
F Qiu, RHJ Vervuurt, MA Verheijen, EW Zaia, EB Creel, Y Kim, JJ Urban, ...
Nanoscale 10 (13), 5859-5863, 2018
52018
Methods and systems for filling a gap
E Färm, S Iwashita, C Dezelah, JW Maes, T Blanquart, RHJ Vervuurt, ...
US Patent App. 17/680,711, 2022
22022
Methods and aparatuses for flowable gap-fill
S Yoshimoto, T Onuma, M Igarashi, Y Mori, H Fukuda, RHJ Vervuurt, ...
US Patent App. 17/451,299, 2022
12022
Das System kann den Vorgang jetzt nicht ausführen. Versuchen Sie es später erneut.
Artikel 1–20