Folgen
Subhabrata Dhar
Subhabrata Dhar
Bestätigte E-Mail-Adresse bei phy.iitb.ac.in
Titel
Zitiert von
Zitiert von
Jahr
Colossal magnetic moment of Gd in GaN
S Dhar, O Brandt, M Ramsteiner, VF Sapega, KH Ploog
Physical Review Letters 94 (3), 037205, 2005
4372005
Origin of high-temperature ferromagnetism in (Ga, Mn) N layers grown on 4H–SiC (0001) by reactive molecular-beam epitaxy
S Dhar, O Brandt, A Trampert, L Däweritz, KJ Friedland, KH Ploog, ...
Applied Physics Letters 82 (13), 2077-2079, 2003
2452003
Impact of nucleation conditions on the structural and optical properties of M-plane GaN (1100) grown on γ-LiAlO2
YJ Sun, O Brandt, U Jahn, TY Liu, A Trampert, S Cronenberg, S Dhar, ...
Journal of Applied Physics 92 (10), 5714-5719, 2002
1952002
Gd-doped GaN: A very dilute ferromagnetic semiconductor with a Curie temperature above 300 K
S Dhar, L Pérez, O Brandt, A Trampert, KH Ploog, J Keller, B Beschoten
Physical Review B 72 (24), 245203, 2005
1792005
Ferromagnetism and colossal magnetic moment in Gd-focused ion-beam-implanted GaN
S Dhar, T Kammermeier, A Ney, L Pérez, KH Ploog, A Melnikov, ...
Applied Physics Letters 89 (6), 2006
1472006
Observation of spin-glass behavior in homogeneous (Ga, Mn) N layers grown by reactive molecular-beam epitaxy
S Dhar, O Brandt, A Trampert, KJ Friedland, YJ Sun, KH Ploog
Physical Review B 67 (16), 165205, 2003
1452003
Nonpolar In x Ga 1− x N/GaN (11¯ 0 0) multiple quantum wells grown on γ− LiAlO 2 (100) by plasma-assisted molecular-beam epitaxy
YJ Sun, O Brandt, S Cronenberg, S Dhar, HT Grahn, KH Ploog, ...
Physical Review B 67 (4), 041306, 2003
1332003
Effect of surface groups on the luminescence property of ZnO nanoparticles synthesized by sol–gel route
A Sharma, BP Singh, S Dhar, A Gondorf, M Spasova
Surface Science 606 (3-4), L13-L17, 2012
1172012
Rare earth doped III-nitrides for optoelectronic and spintronic applications
K O’Donnell, V Dierolf
Springer Netherlands, 2010
1152010
A generalized three-stage mechanism of ZnO nanoparticle formation in homogeneous liquid medium
A Layek, G Mishra, A Sharma, M Spasova, S Dhar, A Chowdhury, ...
The Journal of Physical Chemistry C 116 (46), 24757-24769, 2012
832012
Low field electron mobility in GaN
S Dhar, S Ghosh
Journal of Applied Physics 86 (5), 2668-2676, 1999
791999
Effect of annealing on the magnetic properties of Gd focused ion beam implanted GaN
MA Khaderbad, S Dhar, L Pérez, KH Ploog, A Melnikov, AD Wieck
Applied Physics Letters 91 (7), 2007
712007
Element specific investigations of the structural and magnetic properties of Gd: GaN
A Ney, T Kammermeier, E Manuel, V Ney, S Dhar, KH Ploog, F Wilhelm, ...
Applied Physics Letters 90 (25), 2007
632007
Strictly monolayer large continuous MoS2 films on diverse substrates and their luminescence properties
PK Mohapatra, S Deb, BP Singh, P Vasa, S Dhar
Applied Physics Letters 108, 042101, 2016
612016
Structural and magnetic properties of (Ga, Mn) N layers grown on SiC by reactive molecular beam epitaxy
KH Ploog, S Dhar, A Trampert
Journal of Vacuum Science & Technology B: Microelectronics and Nanometer …, 2003
602003
Exciton Emission Intensity Modulation of Monolayer MoS2 via Au Plasmon Coupling
B Mukherjee, N Kaushik, R Tripathi, AM Joseph, P Mohapatra, S Dhar, ...
Scientific Reports 7, 41175, 2017
592017
Quantum-confined stark effect in localized luminescent centers within InGaN/GaN quantum-well based light emitting diodes
S De, A Layek, S Bhattacharya, D Kumar Das, A Kadir, A Bhattacharya, ...
Applied Physics Letters 101 (12), 2012
592012
Two Distinct Origins of Highly Localized Luminescent Centers within InGaN/GaN Quantum‐Well Light‐Emitting Diodes
S De, A Layek, A Raja, A Kadir, MR Gokhale, A Bhattacharya, S Dhar, ...
Advanced Functional Materials 21 (20), 3828-3835, 2011
562011
Ferrimagnetic Mn4N (111) layers grown on 6H-SiC (0001) and GaN (0001) by reactive molecular-beam epitaxy
S Dhar, O Brandt, KH Ploog
Applied Physics Letters 86 (11), 2005
522005
Magnetic phases and anisotropy in Gd-doped
L Pérez, GS Lau, S Dhar, O Brandt, KH Ploog
Physical Review B 74 (19), 195207, 2006
492006
Das System kann den Vorgang jetzt nicht ausführen. Versuchen Sie es später erneut.
Artikel 1–20