Folgen
WARREN B JACKSON
WARREN B JACKSON
Principal Scientist
Bestätigte E-Mail-Adresse bei parc.com
Titel
Zitiert von
Zitiert von
Jahr
Photothermal deflection spectroscopy and detection
WB Jackson, NM Amer, AC Boccara, D Fournier
Applied optics 20 (8), 1333-1344, 1981
18011981
Light-induced metastable defects in hydrogenated amorphous silicon: A systematic study
M Stutzmann, WB Jackson, CC Tsai
Physical Review B 32 (1), 23, 1985
15681985
A polymer/semiconductor write-once read-many-times memory
S Möller, C Perlov, W Jackson, C Taussig, SR Forrest
Nature 426 (6963), 166-169, 2003
8932003
Direct measurement of gap-state absorption in hydrogenated amorphous silicon by photothermal deflection spectroscopy
WB Jackson, NM Amer
Physical Review B 25 (8), 5559, 1982
8301982
Stretched-exponential relaxation arising from dispersive diffusion of hydrogen in amorphous silicon
J Kakalios, RA Street, WB Jackson
Physical review letters 59 (9), 1037, 1987
7631987
Piezoelectric photoacoustic detection: theory and experiment
W Jackson, NM Amer
Journal of Applied Physics 51 (6), 3343-3353, 1980
4861980
Sensitive photothermal deflection technique for measuring absorption in optically thin media
AC Boccara, D Fournier, W Jackson, NM Amer
Optics Letters 5 (9), 377-379, 1980
4681980
Energy dependence of the optical matrix element in hydrogenated amorphous and crystalline silicon
WB Jackson, SM Kelso, CC Tsai, JW Allen, SJ Oh
Physical Review B 31 (8), 5187, 1985
4021985
High-performance flexible zinc tin oxide field-effect transistors
WB Jackson, RL Hoffman, GS Herman
Applied physics letters 87 (19), 2005
3382005
Hydrogen diffusion in amorphous silicon
RA Street, CC Tsai, J Kakalios, WB Jackson
Philosophical Magazine B 56 (3), 305-320, 1987
3231987
Passivation kinetics of two types of defects in polysilicon TFT by plasma hydrogenation
IW Wu, TY Huang, WB Jackson, AG Lewis, A Chiang
IEEE Electron Device Letters 12 (4), 181-183, 1991
2991991
Density of gap states of silicon grain boundaries determined by optical absorption
WB Jackson, NM Johnson, DK Biegelsen
Applied physics letters 43 (2), 195-197, 1983
2891983
Role of hydrogen in the formation of metastable defects in hydrogenated amorphous silicon
WB Jackson, JM Marshall, MD Moyer
Physical Review B 39 (2), 1164, 1989
2501989
Storage structure with cleaved layer
NW Meyer, AL Van Brocklin, P Fricke, W Jackson, KJ Eldredge
US Patent 6,967,149, 2005
2492005
Electronic device with recovery layer proximate to active layer
WB Jackson, M Hack
US Patent 5,081,513, 1992
2401992
Hydrogen transport in amorphous silicon
WB Jackson, CC Tsai
Physical Review B 45 (12), 6564, 1992
2011992
Hydrogen passivation of grain boundary defects in polycrystalline silicon thin films
NH Nickel, NM Johnson, WB Jackson
Applied physics letters 62 (25), 3285-3287, 1993
1911993
Mechanisms of thermal equilibration in doped amorphous silicon
RA Street, M Hack, WB Jackson
Physical Review B 37 (8), 4209, 1988
1901988
An accurate locally active memristor model for S-type negative differential resistance in NbOx
GA Gibson, S Musunuru, J Zhang, K Vandenberghe, J Lee, CC Hsieh, ...
Applied Physics Letters 108 (2), 2016
1882016
Microdevice valve structures to fluid control
DK Biegelsen, WB Jackson, PCP Cheung, MH Yim, AA Berlin
US Patent 5,971,355, 1999
1881999
Das System kann den Vorgang jetzt nicht ausführen. Versuchen Sie es später erneut.
Artikel 1–20