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Mihir Pendharkar
Mihir Pendharkar
Q-FARM Bloch Postdoctoral Fellow, Stanford University
Bestätigte E-Mail-Adresse bei stanford.edu - Startseite
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Zitiert von
Zitiert von
Jahr
Electric field tunable superconductor-semiconductor coupling in Majorana nanowires
MWA De Moor, JDS Bommer, D Xu, GW Winkler, AE Antipov, A Bargerbos, ...
New Journal of Physics 20 (10), 103049, 2018
1052018
Conductance-matrix symmetries of a three-terminal hybrid device
GC Ménard, GLR Anselmetti, EA Martinez, D Puglia, FK Malinowski, ...
Physical Review Letters 124 (3), 036802, 2020
952020
Electrically reconfigurable metasurfaces using heterojunction resonators
PP Iyer, M Pendharkar, JA Schuller
Advanced Optical Materials 4 (10), 1582-1588, 2016
932016
Ultrawide thermal free-carrier tuning of dielectric antennas coupled to epsilon-near-zero substrates
PP Iyer, M Pendharkar, CJ Palmstrøm, JA Schuller
Nature Communications 8 (1), 472, 2017
842017
Parity-preserving and magnetic field–resilient superconductivity in InSb nanowires with Sn shells
M Pendharkar, B Zhang, H Wu, A Zarassi, P Zhang, CP Dempsey, JS Lee, ...
Science 372 (6541), 508-511, 2021
74*2021
Parity transitions in the superconducting ground state of hybrid InSb–Al Coulomb islands
J Shen, S Heedt, F Borsoi, B Van Heck, S Gazibegovic, RLMO het Veld, ...
Nature communications 9 (1), 4801, 2018
722018
Selective-area chemical beam epitaxy of in-plane InAs one-dimensional channels grown on InP (001), InP (111) B, and InP (011) surfaces
JS Lee, S Choi, M Pendharkar, DJ Pennachio, B Markman, M Seas, ...
Physical Review Materials 3 (8), 084606, 2019
662019
Gate-tunable superconducting diode effect in a three-terminal Josephson device
M Gupta, GV Graziano, M Pendharkar, JT Dong, CP Dempsey, ...
Nature communications 14 (1), 3078, 2023
65*2023
Transport Studies of Epi-Al/InAs Two-Dimensional Electron Gas Systems for Required Building-Blocks in Topological Superconductor Networks
JS Lee, B Shojaei, M Pendharkar, AP McFadden, Y Kim, HJ Suominen, ...
Nano letters 19 (5), 3083-3090, 2019
622019
Transport studies in a gate-tunable three-terminal Josephson junction
GV Graziano, JS Lee, M Pendharkar, CJ Palmstrøm, VS Pribiag
Physical Review B 101 (5), 054510, 2020
552020
In-plane selective area InSb–Al nanowire quantum networks
RLM Op het Veld, D Xu, V Schaller, MA Verheijen, SME Peters, J Jung, ...
Communications Physics 3 (1), 1-7, 2020
512020
End-to-end correlated subgap states in hybrid nanowires
GLR Anselmetti, EA Martinez, GC Ménard, D Puglia, FK Malinowski, ...
Physical Review B 100 (20), 205412, 2019
512019
Large zero-bias peaks in InSb-Al hybrid semiconductor-superconductor nanowire devices
H Zhang, MWA de Moor, JDS Bommer, D Xu, G Wang, N van Loo, CX Liu, ...
arXiv preprint arXiv:2101.11456, 2021
442021
III–V heterojunction platform for electrically reconfigurable dielectric metasurfaces
PP Iyer, M Pendharkar, CJ Palmstrøm, JA Schuller
ACS Photonics 6 (6), 1345-1350, 2019
342019
Mirage Andreev spectra generated by mesoscopic leads in nanowire quantum dots
Z Su, A Zarassi, JF Hsu, P San-Jose, E Prada, R Aguado, EJH Lee, ...
Physical review letters 121 (12), 127705, 2018
342018
A full parity phase diagram of a proximitized nanowire island
J Shen, GW Winkler, F Borsoi, S Heedt, V Levajac, JY Wang, D van Driel, ...
Phys. Rev. B 104, 045422, 2021
262021
Materials considerations for forming the topological insulator phase in InAs/GaSb heterostructures
B Shojaei, AP McFadden, M Pendharkar, JS Lee, ME Flatté, ...
Physical Review Materials 2 (6), 064603, 2018
262018
Selective control of conductance modes in multi-terminal Josephson junctions
GV Graziano, M Gupta, M Pendharkar, JT Dong, CP Dempsey, ...
Nature Communications 13, 5933, 2022
222022
Limits to mobility in InAs quantum wells with nearly lattice-matched barriers
B Shojaei, ACC Drachmann, M Pendharkar, DJ Pennachio, MP Echlin, ...
Physical Review B 94 (24), 245306, 2016
212016
Contribution of top barrier materials to high mobility in near-surface InAs quantum wells grown on GaSb (001)
JS Lee, B Shojaei, M Pendharkar, M Feldman, K Mukherjee, ...
Physical Review Materials 3 (1), 014603, 2019
162019
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