Recommended methods to study resistive switching devices M Lanza, HSP Wong, E Pop, D Ielmini, D Strukov, BC Regan, L Larcher, ...
Advanced Electronic Materials 5 (1), 1800143, 2019
599 2019 Reliability wearout mechanisms in advanced CMOS technologies AW Strong, EY Wu, RP Vollertsen, J Sune, G La Rosa, TD Sullivan, ...
John Wiley & Sons, 2009
268 2009 Power-law voltage acceleration: A key element for ultra-thin gate oxide reliability EY Wu, J Suné
Microelectronics reliability 45 (12), 1809-1834, 2005
190 2005 On the Weibull shape factor of intrinsic breakdown of dielectric films and its accurate experimental determination. Part I: theory, methodology, experimental techniques EY Wu, RP Vollertsen
IEEE Transactions on Electron Devices 49 (12), 2131-2140, 2002
169 2002 Interplay of voltage and temperature acceleration of oxide breakdown for ultra-thin gate oxides E Wu, J Sune, W Lai, E Nowak, J McKenna, A Vayshenker, D Harmon
Solid-State Electronics 46 (11), 1787-1798, 2002
168 2002 Ultra-thin oxide reliability for ULSI applications EY Wu, JH Stathis, LK Han
Semiconductor Science and Technology 15 (5), 425, 2000
152 2000 Experimental evidence of T/sub BD/power-law for voltage dependence of oxide breakdown in ultrathin gate oxides EY Wu, A Vayshenker, E Nowak, J Sune, RP Vollertsen, W Lai, D Harmon
IEEE Transactions on Electron Devices 49 (12), 2244-2253, 2002
133 2002 Voltage-dependent voltage-acceleration of oxide breakdown for ultra-thin oxides EY Wu, J Aitken, E Nowak, A Vayshenker, P Varekamp, G Hueckel, ...
International Electron Devices Meeting 2000. Technical Digest. IEDM (Cat. No …, 2000
128 2000 A manufacturable dual channel (Si and SiGe) high-k metal gate CMOS technology with multiple oxides for high performance and low power applications S Krishnan, U Kwon, N Moumen, MW Stoker, ECT Harley, S Bedell, ...
2011 International Electron Devices Meeting, 28.1. 1-28.1. 4, 2011
126 2011 Boron nitride as two dimensional dielectric: Reliability and dielectric breakdown Y Ji, C Pan, M Zhang, S Long, X Lian, F Miao, F Hui, Y Shi, L Larcher, ...
Applied Physics Letters 108 (1), 2016
122 2016 Challenges for accurate reliability projections in the ultra-thin oxide regime EY Wu, WW Abadeer, LK Han, SH Lo, GR Hueckel
1999 IEEE International Reliability Physics Symposium Proceedings. 37th …, 1999
118 1999 CMOS scaling beyond the 100-nm node with silicon-dioxide-based gate dielectrics EY Wu, EJ Nowak, A Vayshenker, WL Lai, DL Harmon
IBM Journal of Research and Development 46 (2.3), 287-298, 2002
115 2002 On the Weibull shape factor of intrinsic breakdown of dielectric films and its accurate experimental determination. Part II: experimental results and the effects of stress … EY Wu, J Suñé, W Lai
IEEE Transactions on Electron Devices 49 (12), 2141-2150, 2002
108 2002 Structural dependence of dielectric breakdown in ultra-thin gate oxides and its relationship to soft breakdown modes and device failure E Wu, E Nowak, J Aitken, W Abadeer, LK Han, S Lo
International Electron Devices Meeting 1998. Technical Digest (Cat. No …, 1998
99 1998 Gate oxide breakdown under current limited constant voltage stress BP Linder, JH Stathis, RA Wachnik, E Wu, SA Cohen, A Ray, ...
2000 Symposium on VLSI Technology. Digest of Technical Papers (Cat. No …, 2000
91 2000 Hydrogen-Release Mechanisms in the Breakdown of Thin J Suñé, EY Wu
Physical review letters 92 (8), 087601, 2004
85 2004 Statistics of successive breakdown events in gate oxides J Sune, EY Wu
IEEE Electron Device Letters 24 (4), 272-274, 2003
77 2003 Modeling of time-dependent non-uniform dielectric breakdown using a clustering statistical approach EY Wu, B Li, JH Stathis
Applied Physics Letters 103 (15), 2013
75 2013 Weibull breakdown characteristics and oxide thickness uniformity EY Wu, EJ Nowak, RP Vollertsen, LK Han
IEEE Transactions on Electron Devices 47 (12), 2301-2309, 2000
75 2000 IEEE EDL E Wu, J Suñé
IEEE EDL 21 (7), 341-343, 2000
75 2000 