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| A 7nm FinFET technology featuring EUV patterning and dual strained high mobility channels R Xie, P Montanini, K Akarvardar, N Tripathi, B Haran, S Johnson, T Hook, ... 2016 IEEE international electron devices meeting (IEDM), 2.7. 1-2.7. 4, 2016 | 186 | 2016 |
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| FinFET parasitic capacitance reduction using air gap T Ando, JB Chang, SK Kanakasabapathy, P Kulkarni, TE Standaert, ... US Patent 8,637,930, 2014 | 118 | 2014 |
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| Air gap spacer formation for nano-scale semiconductor devices K Cheng, TJ Haigh, J Li, EG Liniger, SC Mehta, SV Nguyen, C Park, ... US Patent 10,418,277, 2019 | 78 | 2019 |
| Si nanowire CMOS fabricated with minimal deviation from RMG FinFET technology showing record performance I Lauer, N Loubet, SD Kim, JA Ott, S Mignot, R Venigalla, T Yamashita, ... 2015 Symposium on VLSI Technology (VLSI Technology), T140-T141, 2015 | 77 | 2015 |
| Sub-25nm FinFET with advanced fin formation and short channel effect engineering T Yamashita, VS Basker, T Standaert, CC Yeh, T Yamamoto, K Maitra, ... 2011 Symposium on VLSI Technology-Digest of Technical Papers, 14-15, 2011 | 76 | 2011 |
| Full bottom dielectric isolation to enable stacked nanosheet transistor for low power and high performance applications J Zhang, J Frougier, A Greene, X Miao, L Yu, R Vega, P Montanini, ... 2019 IEEE International Electron Devices Meeting (IEDM), 11.6. 1-11.6. 4, 2019 | 72 | 2019 |
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| FINFET technology featuring high mobility SiGe channel for 10nm and beyond D Guo, G Karve, G Tsutsui, KY Lim, R Robison, T Hook, R Vega, D Liu, ... 2016 IEEE Symposium on VLSI Technology, 1-2, 2016 | 66 | 2016 |
| Stacked nanowire field effect transistor VS Basker, T Yamashita, CC Yeh US Patent 8,679,902, 2014 | 64 | 2014 |
| Bulk fin-field effect transistors with well defined isolation K Cheng, BS Haran, S Ponoth, TE Standaert, T Yamashita US Patent 8,420,459, 2013 | 63 | 2013 |
| High-k metal gate fundamental learning and multi-Vt options for stacked nanosheet gate-all-around transistor J Zhang, T Ando, CW Yeung, M Wang, O Kwon, R Galatage, R Chao, ... 2017 IEEE International Electron Devices Meeting (IEDM), 22.1. 1-22.1. 4, 2017 | 62 | 2017 |
| Stacked nanosheet field-effect transistor with air gap spacers J Frougier, R Xie, H Zang, K Cheng, T Yamashita, CC Yeh US Patent 10,269,983, 2019 | 61 | 2019 |
