Ali Shahhoseini
Ali Shahhoseini
Associate professor of Electrical Engineering, Qazvin Islamic Azad University
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Zitiert von
Zitiert von
A fast modeling of the double-diode model for PV modules using combined analytical and numerical approach
A Yahya-Khotbehsara, A Shahhoseini
Solar Energy 162, 403-409, 2018
A new method on designing and simulating CNTFET_based ternary gates and arithmetic circuits
H Samadi, A Shahhoseini, F Agaei-Liavali
Microelectronics Journal 63, 41-48, 2017
Negative differential resistance and rectification effects in zigzag graphene nanoribbon heterojunctions: induced by edge oxidation and symmetry concept
M Nazirfakhr, A Shahhoseini
Physics Letters A 382 (10), 704-709, 2018
Direct current (DC) microgrid control in the presence of electrical vehicle/photovoltaic (EV/PV) systems and hybrid energy storage systems: A Case study of grounding and …
B Taheri, A Shahhoseini
IET Generation, Transmission & Distribution 17 (13), 3084-3099, 2023
Using Molybdenum Trioxide as a TCO Layer to Improve Performance of CdTe/CdS Thin-film Solar Cell
B Mozafari, A Shahhoseini
Signal processing and Renewable Energy 4 (3), 57-65, 2020
The vacancy defect in graphene nano-ribbon field-effect transistor in the presence of an external perpendicular magnetic field
S Bahrami, A Shahhoseini
Microsystem Technologies Microsystem Technologies, 2015
A fast and accurate five parameters double-diode model of photovoltaic modules
AY Khotbehsara, A Shahhoseini
2017 Iranian Conference on Electrical Engineering (ICEE), 265-270, 2017
Performance analysis of junctionless carbon nanotube field effect transistors using NEGF formalism
S Barbastegan, A Shahhoseini
Modern Physics Letters B 30 (10), 1650125, 2016
Using superlattice structure in the source of GNRFET to improve its switching performance
B Behtoee, R Faez, A Shahhoseini, MK Moravvej-Farshi
IEEE Transactions on Electron Devices 67 (3), 1334-1339, 2020
The non-equilibrium Green's function (NEGF) simulation of nanoscale lightly doped drain and source double gate MOSFETs
Z Rajabi, A Shahhoseini, R Faez
2012 International Conference on Devices, Circuits and Systems (ICDCS), 25-28, 2012
Local impact of Stone–Wales defect on a single layer GNRFET
H Shamloo, A Nazari, R Faez, A Shahhoseini
Physics Letters A 384 (7), 126170, 2020
Analysis of a 3–5 GHz UWB CMOS low-noise amplifier for wireless applications
B Ansari, H Shamsi, A Shahhoseini
2009 52nd IEEE International Midwest Symposium on Circuits and Systems, 979-982, 2009
Hydrogenated fluorinated microcrystalline silicon oxide (µc-SiO: F: H): a new material for the emitter layer of HIT solar cells
H Delavaran, A Shahhoseini
2019 27th Iranian Conference on Electrical Engineering (ICEE), 36-40, 2019
Electrical conductance of telescoping double-walled carbon nanotubes with Stone-Wales and monovacancy defects
E Aghabararian, A Shahhoseini
5th International Congress on Nanoscience & Nanotechnology (ICNN2014) , 2014
Techno-Economic Study and Sensitivity Analysis of an On-Grid Photovoltaic-Battery-Diesel Hybrid System Under Blackouts Conditions: A Case Study on an Industrial Unit in Iran
A Shahhoseini, A Azimi-Shaghaghi, S Yazdanipour
Available at SSRN 4017462, 2022
Investigating the Role of Niobium Pentoxide as Transparent Conductive Oxide layer on the Efficiency of Thin Film Amorphous Silicon Solar Cell
M Afzali, A Shahhoseini, H Keshvari
2019 27th Iranian Conference on Electrical Engineering (ICEE), 54-59, 2019
Design, Simulation and Sensitivity Analysis of an Off-grid Hybrid System based on Renewable Energies for a Rural Area in Iran
M Ghorbanzadeh, A Shahhoseini
1st IEEE International Conference on Power Electronics, Intelligent Control …, 2016
Stability Improvement and consumption power of CNTFET-based ternary memory ell
R Azhari, A Shahhoseini, F Aghaei-liavali
submitted to 2015 IEEE International Conference on Research in Computational …, 2015
Detemining the Thickness of Barriers and Well of Resonance Tunneling Diodes by Specified IV Characteristic
A Shahhoseini, S Ghorbanalipour, R Faez
Applied Mechanics and Materials 110, 5464-5470, 2012
An Analytic Model for Kink Effect in IV Characteristics of Single Electron Transistors
Iranian Journal of Electrical and Electronic Engineering 5 (4), 234-243, 2009
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