Folgen
Jan Vanhellemont
Jan Vanhellemont
Department of Solid State Sciences, Ghent University
Bestätigte E-Mail-Adresse bei ugent.be
Titel
Zitiert von
Zitiert von
Jahr
A theoretical study of the critical radius of precipitates and its application to silicon oxide in silicon
J Vanhellemont, C Claeys
Journal of applied physics 62 (9), 3960-3967, 1987
2451987
Micro‐Raman study of stress distribution in local isolation structures and correlation with transmission electron microscopy
I De Wolf, J Vanhellemont, A Romano‐Rodríguez, H Norström, HE Maes
Journal of Applied Physics 71 (2), 898-906, 1992
1981992
Brother silicon, sister germanium
J Vanhellemont, E Simoen
journal of the electrochemical society 154 (7), H572, 2007
1492007
Film‐edge‐induced dislocation generation in silicon substrates. I. Theoretical model
J Vanhellemont, S Amelinckx, C Claeys
Journal of applied physics 61 (6), 2170-2175, 1987
125*1987
Diffusion limited oxygen precipitation in silicon: Precipitate growth kinetics and phase formation
J Vanhellemont
Journal of applied physics 78 (6), 4297-4299, 1995
1141995
On the solubility and diffusivity of the intrinsic point defects in germanium
J Vanhellemont, P Śpiewak, K Sueoka
Journal of applied physics 101 (3), 2007
1092007
Impact of oxygen related extended defects on silicon diode characteristics
J Vanhellemont, E Simoen, A Kaniava, M Libezny, C Claeys
Journal of Applied Physics 77 (11), 5669-5676, 1995
1071995
Impact of Fe and Cu contamination on the minority carrier lifetime of silicon substrates
ALP Rotondaro, TQ Hurd, A Kaniava, J Vanhellemont, E Simoen, ...
Journal of the Electrochemical Society 143 (9), 3014, 1996
1001996
Dependence of carrier lifetime in germanium on resisitivity and carrier injection level
E Gaubas, J Vanhellemont
Applied physics letters 89 (14), 2006
972006
Density functional theory study on the impact of heavy doping on Si intrinsic point defect properties and implications for single crystal growth from a melt
K Sueoka, E Kamiyama, J Vanhellemont
Journal of Applied Physics 114 (15), 2013
872013
On the diffusion and activation of n-type dopants in Ge
J Vanhellemont, E Simoen
Materials Science in Semiconductor Processing 15 (6), 642-655, 2012
792012
Extended Defects Formation in Si Crystals by Clustering of Intrinsic Point Defects Studied by in‐situ Electron Irradiation in an HREM
L Fedina, A Gutakovskii, A Aseev, J Van Landuyt, J Vanhellemont
physica status solidi (a) 171 (1), 147-158, 1999
711999
Evaluation of the crystalline quality of β-Ga2O3 films by optical absorption measurements
K Takakura, D Koga, H Ohyama, JM Rafi, Y Kayamoto, M Shibuya, ...
Physica B: Condensed Matter 404 (23-24), 4854-4857, 2009
702009
On the diffusion and activation of ion-implanted n-type dopants in germanium
E Simoen, J Vanhellemont
Journal of Applied Physics 106 (10), 2009
702009
Rod‐like defects in silicon: Coesite or hexagonal silicon?
H Bender, J Vanhellemont
Physica status solidi (a) 107 (2), 455-467, 1988
691988
Comparative study of carrier lifetime dependence on dopant concentration in silicon and germanium
E Gaubas, J Vanhellemont
Journal of The Electrochemical Society 154 (3), H231, 2007
682007
A fast preparation technique for high-quality plan view and cross-section TEM specimens of semiconducting materials
A Romano, J Vanhellemont, H Bender, JR Morante
Ultramicroscopy 31 (2), 183-192, 1989
631989
Intrinsic point defect incorporation in silicon single crystals grown from a melt, revisited
J Vanhellemont
Journal of Applied Physics 110 (6), 2011
612011
A simple technique for the separation of bulk and surface recombination parameters in silicon
E Gaubas, J Vanhellemont
Journal of Applied Physics 80 (11), 6293-6297, 1996
601996
Numerical aspects of the implementation of effective-medium approximation models in spectroscopic ellipsometry regression software
PJ Rouseel, J Vanhellemont, HE Maes
Thin solid films 234 (1-2), 423-427, 1993
601993
Das System kann den Vorgang jetzt nicht ausführen. Versuchen Sie es später erneut.
Artikel 1–20