G.D.J. Smit
G.D.J. Smit
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Zitiert von
Zitiert von
PSP: An advanced surface-potential-based MOSFET model for circuit simulation
G Gildenblat, X Li, W Wu, H Wang, A Jha, R Van Langevelde, GDJ Smit, ...
IEEE Transactions on Electron Devices 53 (9), 1979-1993, 2006
Scaling of nano-Schottky-diodes
GDJ Smit, S Rogge, TM Klapwijk
Applied Physics Letters 81 (20), 3852-3854, 2002
Enhanced tunneling across nanometer-scale metal–semiconductor interfaces
GDJ Smit, S Rogge, TM Klapwijk
Applied Physics Letters 80 (14), 2568-2570, 2002
Best practices for compact modeling in Verilog-A
CC McAndrew, GJ Coram, KK Gullapalli, JR Jones, LW Nagel, AS Roy, ...
IEEE Journal of the Electron Devices Society 3 (5), 383-396, 2015
Experimental assessment of self-heating in SOI FinFETs
AJ Scholten, GDJ Smit, RMT Pijper, LF Tiemeijer, HP Tuinhout, ...
2009 IEEE International Electron Devices Meeting (IEDM), 1-4, 2009
Gate-induced ionization of single dopant atoms
GDJ Smit, S Rogge, J Caro, TM Klapwijk
Physical Review B 68 (19), 193302, 2003
RF-noise modeling in advanced CMOS technologies
GDJ Smit, AJ Scholten, RMT Pijper, LF Tiemeijer, R van der Toorn, ...
IEEE Transactions on Electron Devices 61 (2), 245-254, 2013
Stark effect in shallow impurities in
GDJ Smit, S Rogge, J Caro, TM Klapwijk
Physical Review B—Condensed Matter and Materials Physics 70 (3), 035206, 2004
Introduction to PSP MOSFET model
G Gildenblat, X Li, H Wang, W Wu, R Van Langevelde, AJ Scholten, ...
Proc. the MSM 2005 Int. Conf., Nanotech 2005, 2005
A unified nonquasi-static MOSFET model for large-signal and small-signal simulations
H Wang, X Li, W Wu, G Gildenblat, R Van Langevelde, GDJ Smit, ...
IEEE transactions on electron devices 53 (9), 2035-2043, 2006
The new CMC standard compact MOS model PSP: Advantages for RF applications
AJ Scholten, GDJ Smit, BA De Vries, LF Tiemeijer, JA Croon, ...
IEEE Journal of Solid-State Circuits 44 (5), 1415-1424, 2009
The physical background of JUNCAP2
AJ Scholten, GDJ Smit, M Durand, R Van Langevelde, DBM Klaassen
IEEE transactions on electron devices 53 (9), 2098-2107, 2006
PSP-based scalable compact FinFET model
GDJ Smit, AJ Scholten, G Curatola, R Van Langevelde, G Gildenblat, ...
Proc. Nanotech, 520-525, 2007
The relation between degradation under DC and RF stress conditions
AJ Scholten, D Stephens, GDJ Smit, GT Sasse, J Bisschop
IEEE Transactions on Electron Devices 58 (8), 2721-2728, 2011
PSP-based compact FinFET model describing dc and RF measurements
GDJ Smit, AJ Scholten, N Serra, RMT Pijper, R van Langevelde, ...
2006 International Electron Devices Meeting, 1-4, 2006
Benchmark tests for MOSFET compact models with application to the PSP model
X Li, W Wu, A Jha, G Gildenblat, R van Langevelde, GDJ Smit, ...
IEEE Transactions on Electron Devices 56 (2), 243-251, 2009
Scaling of micro-fabricated nanometer-sized Schottky diodes
GDJ Smit, MG Flokstra, S Rogge, TM Klapwijk
Microelectronic Engineering 64 (1-4), 429-433, 2002
Symmetric linearization method for double-gate and surrounding-gate MOSFET models
G Dessai, A Dey, G Gildenblat, GDJ Smit
Solid-state electronics 53 (5), 548-556, 2009
Surface-potential-based compact model of bulk MOSFET
G Gildenblat, W Wu, X Li, R van Langevelde, AJ Scholten, GDJ Smit, ...
Compact Modeling: Principles, Techniques and Applications, 3-40, 2010
PSP-SOI: An advanced surface potential based compact model of partially depleted SOI MOSFETs for circuit simulations
W Wu, X Li, G Gildenblat, GO Workman, S Veeraraghavan, CC McAndrew, ...
Solid-State Electronics 53 (1), 18-29, 2009
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