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Hsin-wei Tseng
Hsin-wei Tseng
SK-Hynix America
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Titel
Zitiert von
Zitiert von
Jahr
Spin-torque switching with the giant spin Hall effect of tantalum
L Liu, CF Pai, Y Li, HW Tseng, DC Ralph, RA Buhrman
Science 336 (6081), 555-558, 2012
42302012
Spin transfer torque devices utilizing the giant spin Hall effect of tungsten
CF Pai, L Liu, Y Li, HW Tseng, DC Ralph, RA Buhrman
Applied Physics Letters 101 (12), 2012
16092012
Central role of domain wall depinning for perpendicular magnetization switching driven by spin torque from the spin Hall effect
OJ Lee, LQ Liu, CF Pai, Y Li, HW Tseng, PG Gowtham, JP Park, DC Ralph, ...
Physical Review B 89 (2), 024418, 2014
3122014
Atomic-scale spectroscopic imaging of CoFeB/Mg–B–O/CoFeB magnetic tunnel junctions
JJ Cha, JC Read, WF Egelhoff, PY Huang, HW Tseng, Y Li, RA Buhrman, ...
Applied Physics Letters 95 (3), 2009
602009
Bottom pinned SOT-MRAM bit structure and method of fabrication
PM Braganca, H Tseng, L Wan
US Patent 9,768,229, 2017
372017
High magnetoresistance tunnel junctions with Mg–B–O barriers and Ni–Fe–B free electrodes
JC Read, JJ Cha, WF Egelhoff, HW Tseng, PY Huang, Y Li, DA Muller, ...
Applied Physics Letters 94 (11), 2009
302009
Immunity of nanoscale magnetic tunnel junctions with perpendicular magnetic anisotropy to ionizing radiation
EA Montoya, JR Chen, R Ngelale, HK Lee, HW Tseng, L Wan, E Yang, ...
Scientific reports 10 (1), 10220, 2020
262020
Process optimization of perpendicular magnetic tunnel junction arrays for last-level cache beyond 7 nm node
L Xue, C Ching, A Kontos, J Ahn, X Wang, R Whig, H Tseng, J Howarth, ...
2018 IEEE Symposium on VLSI Technology, 117-118, 2018
202018
Improvement of the low-frequency sensitivity of MgO-based magnetic tunnel junctions by annealing
H Duan, HW Tseng, Y Li, RB van Dover
Journal of Applied Physics 109 (11), 2011
102011
Bottom pinned SOT-MRAM bit structure and method of fabrication
PM Braganca, H Tseng, L Wan
US Patent 10,490,601, 2019
92019
Spin orbit torque MRAM and manufacture thereof
AHN Jaesoo, C Park, H Tseng, XUE Lin, M Pakala
US Patent 10,756,259, 2020
82020
Enhanced signal-to-noise ratio in current-perpendicular-to-plane giant-magnetoresistance sensors by suppression of spin-torque effects
G Mihajlović, TM Nakatani, N Smith, JC Read, YS Choi, HW Tseng, ...
IEEE Magnetics Letters 6, 1-4, 2015
72015
Methods for forming structures for MRAM applications
AHN Jaesoo, H Tseng, XUE Lin, M Pakala
US Patent 10,497,858, 2019
42019
Enabling STT-MRAM in high volume manufacturing for LLC applications
R Whig, C Ching, X Wang, P Agrawal, D Kim, R Wang, J Lei, R Zheng, ...
2019 IEEE 11th International Memory Workshop (IMW), 1-3, 2019
42019
Spin transfer torque devices utilizing the spin Hall effect of tungsten
CF Pai, L Liu, Y Li, HW Tseng, DC Ralph, RA Buhrman
Bulletin of the American Physical Society 58, 2013
32013
Interface and oxide quality of CoFeB/MgO/Si tunnel junctions
JT Shaw, HW Tseng, S Rajwade, LT Tung, RA Buhrman, EC Kan
Journal of Applied Physics 111 (9), 2012
22012
Methods to form top contact to a magnetic tunnel junction
XUE Lin, AHN Jaesoo, H Tseng, M Pakala
US Patent 11,374,170, 2022
12022
Back end memory integration process
H Tseng, M Pakala, XUE Lin, AHN Jaesoo, SA HASSAN
US Patent 11,239,086, 2022
12022
Methods for forming structures for MRAM applications
H Tseng, C Park, AHN Jaesoo, XUE Lin, M Pakala
US Patent 11,069,853, 2021
12021
Self-recovery magnetic random access memory unit
PM Braganca, L Cargnini, JA Katine, H Tseng
US Patent App. 14/859,002, 2017
12017
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