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Vertically self-organized InAs quantum box islands on GaAs (100)
Q Xie, A Madhukar, P Chen, NP Kobayashi
Physical review letters 75 (13), 2542, 1995
17271995
Onset of incoherency and defect introduction in the initial stages of molecular beam epitaxical growth of highly strained InxGa1− xAs on GaAs (100)
S Guha, A Madhukar, KC Rajkumar
Applied Physics Letters 57 (20), 2110-2112, 1990
8811990
High-Resolution X-Ray Photoelectron Spectroscopy as a Probe of Local Atomic Structure: Application to Amorphous Si O 2 and the Si-Si O 2 Interface
FJ Grunthaner, PJ Grunthaner, RP Vasquez, BF Lewis, J Maserjian, ...
Physical Review Letters 43 (22), 1683, 1979
4351979
Local atomic and electronic structure of oxide/GaAs and SiO2/Si interfaces using high‐resolution XPS
FJ Grunthaner, PJ Grunthaner, RP Vasquez, BF Lewis, J Maserjian, ...
Journal of Vacuum Science and Technology 16 (5), 1443-1453, 1979
4081979
Collective modes of spatially separated, two-component, two-dimensional plasma in solids
SD Sarma, A Madhukar
Physical Review B 23 (2), 805, 1981
3761981
Nature of strained InAs three‐dimensional island formation and distribution on GaAs (100)
A Madhukar, Q Xie, P Chen, A Konkar
Applied physics letters 64 (20), 2727-2729, 1994
3251994
Excited states and energy relaxation in stacked InAs/GaAs quantum dots
R Heitz, A Kalburge, Q Xie, M Grundmann, P Chen, A Hoffmann, ...
Physical Review B 57 (15), 9050, 1998
3211998
Enhanced polar exciton-LO-phonon interaction in quantum dots
R Heitz, I Mukhametzhanov, O Stier, A Madhukar, D Bimberg
Physical review letters 83 (22), 4654, 1999
3201999
In situ, atomic force microscope studies of the evolution of InAs three‐dimensional islands on GaAs (001)
NP Kobayashi, TR Ramachandran, P Chen, A Madhukar
Applied physics letters 68 (23), 3299-3301, 1996
2891996
High detectivity InAs quantum dot infrared photodetectors
ET Kim, A Madhukar, Z Ye, JC Campbell
Applied Physics Letters 84 (17), 3277-3279, 2004
2712004
InAs island‐induced‐strain driven adatom migration during GaAs overlayer growth
Q Xie, P Chen, A Madhukar
Applied physics letters 65 (16), 2051-2053, 1994
2701994
Nanoparticle manipulation by mechanical pushing: underlying phenomena and real-time monitoring
C Baur, A Bugacov, BE Koel, A Madhukar, N Montoya, TR Ramachandran, ...
Nanotechnology 9 (4), 360, 1998
2201998
Observation of reentrant 2D to 3D morphology transition in highly strained epitaxy: InAs on GaAs
R Heitz, TR Ramachandran, A Kalburge, Q Xie, I Mukhametzhanov, ...
Physical review letters 78 (21), 4071, 1997
2141997
Independent manipulation of density and size of stress-driven self-assembled quantum dots
I Mukhametzhanov, R Heitz, J Zeng, P Chen, A Madhukar
Applied physics letters 73 (13), 1841-1843, 1998
2071998
The nature of molecular beam epitaxial growth examined via computer simulations
A Madhukar, SV Ghaisas
Critical Reviews in Solid State and Materials Sciences 14 (1), 1-130, 1988
1911988
Normal incidence InAs/AlxGa1− xAs quantum dot infrared photodetectors with undoped active region
Z Chen, O Baklenov, ET Kim, I Mukhametzhanov, J Tie, A Madhukar, Z Ye, ...
Journal of Applied Physics 89 (8), 4558-4563, 2001
1872001
Far from equilibrium vapour phase growth of lattice matched III–V compound semiconductor interfaces: Some basic concepts and monte-carlo computer simulations
A Madhukar
Surface Science 132 (1-3), 344-374, 1983
1821983
Punctuated island growth: An approach to examination and control of quantum dot density, size, and shape evolution
I Mukhametzhanov, Z Wei, R Heitz, A Madhukar
Applied physics letters 75 (1), 85-87, 1999
1721999
Study of electron-phonon interaction and magneto-optical anomalies in two-dimensionally confined systems
SD Sarma, A Madhukar
Physical Review B 22 (6), 2823, 1980
1671980
Study of electron-phonon interaction and magneto-optical anomalies in two-dimensionally confined systems
SD Sarma, A Madhukar
Physical Review B 22 (6), 2823, 1980
1671980
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