Martin M. Frank
Martin M. Frank
IBM Research
Bestätigte E-Mail-Adresse bei - Startseite
Zitiert von
Zitiert von
High performance and highly uniform gate-all-around silicon nanowire MOSFETs with wire size dependent scaling
S Bangsaruntip, GM Cohen, A Majumdar, Y Zhang, SU Engelmann, ...
2009 IEEE International Electron Devices Meeting (IEDM), 1-4, 2009
and gate dielectrics on GaAs grown by atomic layer deposition
MM Frank, GD Wilk, D Starodub, T Gustafsson, E Garfunkel, YJ Chabal, ...
Applied Physics Letters 86 (15), 152904, 2005
Advanced high-κ dielectric stacks with polySi and metal gates: Recent progress and current challenges
EP Gusev, V Narayanan, MM Frank
IBM Journal of Research and Development 50 (4.5), 387-410, 2006
Nitrogen-containing field effect transistor gate stack containing a threshold voltage control layer formed via deposition of a metal oxide
NA Bojarczuk Jr, C Cabral Jr, EA Cartier, MM Frank, EP Gousev, S Guha, ...
US Patent 7,242,055, 2007
Switching of ferroelectric polarization in epitaxial BaTiO 3 films on silicon without a conducting bottom electrode
C Dubourdieu, J Bruley, TM Arruda, A Posadas, J Jordan-Sweet, ...
Nature nanotechnology 8 (10), 748-754, 2013
Absence of magnetism in hafnium oxide films
DW Abraham, MM Frank, S Guha
Applied Physics Letters 87 (25), 252502, 2005
Metallic contact formation for molecular electronics: interactions between vapor-deposited metals and self-assembled monolayers of conjugated mono-and dithiols
B De Boer, MM Frank, YJ Chabal, W Jiang, E Garfunkel, Z Bao
Langmuir 20 (5), 1539-1542, 2004
High-/Metal-Gate Fully Depleted SOI CMOS With Single-Silicide Schottky Source/Drain With Sub-30-nm Gate Length
MH Khater, Z Zhang, J Cai, C Lavoie, C D'Emic, Q Yang, B Yang, ...
IEEE Electron Device Letters 31 (4), 275-277, 2010
Germanium channel MOSFETs: Opportunities and challenges
H Shang, MM Frank, EP Gusev, JO Chu, SW Bedell, KW Guarini, M Ieong
IBM Journal of Research and Development 50 (4.5), 377-386, 2006
From atoms to crystallites: adsorption on oxide-supported metal particles (vol 2, pg 3723, 2000)
M Frank, M Baumer
From atoms to crystallites: adsorption on oxide-supported metal particles
M Frank, M Bäumer
Physical Chemistry Chemical Physics 2 (17), 3723-3737, 2000
Nucleation and interface formation mechanisms in atomic layer deposition of gate oxides
MM Frank, YJ Chabal, GD Wilk
Applied physics letters 82 (26), 4758-4760, 2003
Sub-bandgap defect states in polycrystalline hafnium oxide and their suppression by admixture of silicon
NV Nguyen, AV Davydov, D Chandler-Horowitz, MM Frank
Applied Physics Letters 87 (19), 192903, 2005
Synthesis and characterization of conjugated mono-and dithiol oligomers and characterization of their self-assembled monolayers
B De Boer, H Meng, DF Perepichka, J Zheng, MM Frank, YJ Chabal, ...
Langmuir 19 (10), 4272-4284, 2003
Hafnium oxide gate dielectrics on sulfur-passivated germanium
MM Frank, SJ Koester, M Copel, JA Ott, VK Paruchuri, H Shang, ...
Applied physics letters 89 (11), 112905, 2006
Enhanced initial growth of atomic-layer-deposited metal oxides on hydrogen-terminated silicon
MM Frank, YJ Chabal, ML Green, A Delabie, B Brijs, GD Wilk, MY Ho, ...
Applied physics letters 83 (4), 740-742, 2003
Interaction of rhodium with hydroxylated alumina model substrates
J Libuda, M Frank, A Sandell, S Andersson, PA Brühwiler, M Bäumer, ...
Surface science 384 (1-3), 106-119, 1997
Surface reactivity of Pd nanoparticles supported on polycrystalline substrates as compared to thin film model catalysts: infrared study of CO adsorption
S Bertarione, D Scarano, A Zecchina, V Johánek, J Hoffmann, ...
The Journal of Physical Chemistry B 108 (11), 3603-3613, 2004
A manufacturable dual channel (Si and SiGe) high-k metal gate CMOS technology with multiple oxides for high performance and low power applications
S Krishnan, U Kwon, N Moumen, MW Stoker, ECT Harley, S Bedell, ...
2011 International Electron Devices Meeting, 28.1. 1-28.1. 4, 2011
Fundamental aspects of HfO2-based high-k metal gate stack reliability and implications on tinv-scaling
E Cartier, A Kerber, T Ando, MM Frank, K Choi, S Krishnan, B Linder, ...
2011 International Electron Devices Meeting, 18.4. 1-18.4. 4, 2011
Das System kann den Vorgang jetzt nicht ausführen. Versuchen Sie es später erneut.
Artikel 1–20