Surface group modification and carrier transport properties of layered transition metal carbides (Ti 2 CT x, T:–OH,–F and–O) S Lai, J Jeon, SK Jang, J Xu, YJ Choi, JH Park, E Hwang, S Lee Nanoscale 7 (46), 19390-19396, 2015 | 345 | 2015 |
Plasma-treated thickness-controlled two-dimensional black phosphorus and its electronic transport properties J Jia, SK Jang, S Lai, J Xu, YJ Choi, JH Park, S Lee ACS nano 9 (9), 8729-8736, 2015 | 204 | 2015 |
Large-Area Highly Conductive Transparent Two-Dimensional Ti2CTx Film Y Yang, S Umrao, S Lai, S Lee The journal of physical chemistry letters 8 (4), 859-865, 2017 | 133 | 2017 |
Magnetic Proximity Effect in Graphene/CrBr3 van der Waals Heterostructures C Tang, Z Zhang, S Lai, Q Tan, W Gao Advanced Materials 32 (16), 1908498, 2020 | 116 | 2020 |
Tunneling field effect transistor integrated with black phosphorus-MoS2 junction and ion gel dielectric J Xu, J Jia, S Lai, J Ju, S Lee Applied Physics Letters 110 (3), 2017 | 97 | 2017 |
Third-order nonlinear Hall effect induced by the Berry-connection polarizability tensor S Lai, H Liu, Z Zhang, J Zhao, X Feng, N Wang, C Tang, Y Liu, ... Nature Nanotechnology 16 (8), 869-873, 2021 | 94 | 2021 |
HfO 2/HfS 2 hybrid heterostructure fabricated via controllable chemical conversion of two-dimensional HfS 2 S Lai, S Byeon, SK Jang, J Lee, BH Lee, JH Park, YH Kim, S Lee Nanoscale 10 (39), 18758-18766, 2018 | 66 | 2018 |
Berry connection polarizability tensor and third-order Hall effect H Liu, J Zhao, YX Huang, X Feng, C Xiao, W Wu, S Lai, W Gao, SA Yang Physical Review B 105 (4), 045118, 2022 | 44 | 2022 |
Organic field-effect transistors integrated with Ti 2 CT x electrodes S Lai, SK Jang, JH Cho, S Lee Nanoscale 10 (11), 5191-5197, 2018 | 35 | 2018 |
Epitaxial Growth of Large‐Grain NiSe Films by Solid‐State Reaction for High‐Responsivity Photodetector Arrays C Cai, Y Ma, J Jeon, F Huang, F Jia, S Lai, Z Xu, C Wu, R Zhao, Y Hao, ... Advanced Materials 29 (17), 1606180, 2017 | 27 | 2017 |
Water-penetration-assisted mechanical transfer of large-scale molybdenum disulfide onto arbitrary substrates S Lai, J Jeon, YJ Song, S Lee RSC advances 6 (62), 57497-57501, 2016 | 27 | 2016 |
Room-temperature third-order nonlinear Hall effect in Weyl semimetal TaIrTe4 C Wang, RC Xiao, H Liu, Z Zhang, S Lai, C Zhu, H Cai, N Wang, S Chen, ... National Science Review 9 (12), nwac020, 2022 | 23 | 2022 |
A room-temperature gate-tunable bipolar valley Hall effect in molybdenum disulfide/tungsten diselenide heterostructures C Jiang, A Rasmita, H Ma, Q Tan, Z Zhang, Z Huang, S Lai, N Wang, S Liu, ... Nature Electronics 5 (1), 23-27, 2022 | 18 | 2022 |
Probing graphene defects and estimating graphene quality with optical microscopy S Lai, S Kyu Jang, Y Jae Song, S Lee Applied Physics Letters 104 (4), 2014 | 18 | 2014 |
Dual-gate all-electrical valleytronic transistors S Lai, Z Zhang, N Wang, A Rasmita, Y Deng, Z Liu, W Gao Nano Letters 23 (1), 192-197, 2023 | 10 | 2023 |
Correction: Surface group modification and carrier transport properties of layered transition metal carbides (Ti 2 CT x, T:–OH,–F and–O) S Lai, J Jeon, SK Jang, J Xu, YJ Choi, JH Park, E Hwang, S Lee Nanoscale 8 (2), 1216-1216, 2016 | 10 | 2016 |
Resolidified Chalcogen‐Assisted Growth of Bilayer Semiconductors with Controlled Stacking Orders Q Wu, L He, D Wang, H Nong, J Wang, Z Cai, S Zhao, R Zheng, S Lai, ... Small 20 (2), 2305506, 2024 | 3 | 2024 |
Room-temperature bipolar valleytronic transistor in MoS2/WSe2 heterostructures C Jiang, A Rasmita, H Ma, Q Tan, Z Huang, S Lai, S Liu, X Liu, Q Xiong, ... arXiv preprint arXiv:2102.03756, 2021 | 3 | 2021 |
Non-centrosymmetric topological phase probed by non-linear Hall effect N Wang, JY You, A Wang, X Zhou, Z Zhang, S Lai, YP Feng, H Lin, ... National Science Review 11 (6), nwad103, 2024 | 2 | 2024 |
Electrically tunable Γ–Q interlayer excitons in twisted MoSe2 bilayers J Huang, Z Xiong, J He, X Wu, K Watanabe, T Taniguchi, S Lai, T Zhang, ... Journal of Materials Science & Technology 207, 70-75, 2025 | 1 | 2025 |