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Shen Lai (賴屾)
Shen Lai (賴屾)
University of Macau
Bestätigte E-Mail-Adresse bei um.edu.mo
Titel
Zitiert von
Zitiert von
Jahr
Surface group modification and carrier transport properties of layered transition metal carbides (Ti 2 CT x, T:–OH,–F and–O)
S Lai, J Jeon, SK Jang, J Xu, YJ Choi, JH Park, E Hwang, S Lee
Nanoscale 7 (46), 19390-19396, 2015
3452015
Plasma-treated thickness-controlled two-dimensional black phosphorus and its electronic transport properties
J Jia, SK Jang, S Lai, J Xu, YJ Choi, JH Park, S Lee
ACS nano 9 (9), 8729-8736, 2015
2042015
Large-Area Highly Conductive Transparent Two-Dimensional Ti2CTx Film
Y Yang, S Umrao, S Lai, S Lee
The journal of physical chemistry letters 8 (4), 859-865, 2017
1332017
Magnetic Proximity Effect in Graphene/CrBr3 van der Waals Heterostructures
C Tang, Z Zhang, S Lai, Q Tan, W Gao
Advanced Materials 32 (16), 1908498, 2020
1162020
Tunneling field effect transistor integrated with black phosphorus-MoS2 junction and ion gel dielectric
J Xu, J Jia, S Lai, J Ju, S Lee
Applied Physics Letters 110 (3), 2017
972017
Third-order nonlinear Hall effect induced by the Berry-connection polarizability tensor
S Lai, H Liu, Z Zhang, J Zhao, X Feng, N Wang, C Tang, Y Liu, ...
Nature Nanotechnology 16 (8), 869-873, 2021
942021
HfO 2/HfS 2 hybrid heterostructure fabricated via controllable chemical conversion of two-dimensional HfS 2
S Lai, S Byeon, SK Jang, J Lee, BH Lee, JH Park, YH Kim, S Lee
Nanoscale 10 (39), 18758-18766, 2018
662018
Berry connection polarizability tensor and third-order Hall effect
H Liu, J Zhao, YX Huang, X Feng, C Xiao, W Wu, S Lai, W Gao, SA Yang
Physical Review B 105 (4), 045118, 2022
442022
Organic field-effect transistors integrated with Ti 2 CT x electrodes
S Lai, SK Jang, JH Cho, S Lee
Nanoscale 10 (11), 5191-5197, 2018
352018
Epitaxial Growth of Large‐Grain NiSe Films by Solid‐State Reaction for High‐Responsivity Photodetector Arrays
C Cai, Y Ma, J Jeon, F Huang, F Jia, S Lai, Z Xu, C Wu, R Zhao, Y Hao, ...
Advanced Materials 29 (17), 1606180, 2017
272017
Water-penetration-assisted mechanical transfer of large-scale molybdenum disulfide onto arbitrary substrates
S Lai, J Jeon, YJ Song, S Lee
RSC advances 6 (62), 57497-57501, 2016
272016
Room-temperature third-order nonlinear Hall effect in Weyl semimetal TaIrTe4
C Wang, RC Xiao, H Liu, Z Zhang, S Lai, C Zhu, H Cai, N Wang, S Chen, ...
National Science Review 9 (12), nwac020, 2022
232022
A room-temperature gate-tunable bipolar valley Hall effect in molybdenum disulfide/tungsten diselenide heterostructures
C Jiang, A Rasmita, H Ma, Q Tan, Z Zhang, Z Huang, S Lai, N Wang, S Liu, ...
Nature Electronics 5 (1), 23-27, 2022
182022
Probing graphene defects and estimating graphene quality with optical microscopy
S Lai, S Kyu Jang, Y Jae Song, S Lee
Applied Physics Letters 104 (4), 2014
182014
Dual-gate all-electrical valleytronic transistors
S Lai, Z Zhang, N Wang, A Rasmita, Y Deng, Z Liu, W Gao
Nano Letters 23 (1), 192-197, 2023
102023
Correction: Surface group modification and carrier transport properties of layered transition metal carbides (Ti 2 CT x, T:–OH,–F and–O)
S Lai, J Jeon, SK Jang, J Xu, YJ Choi, JH Park, E Hwang, S Lee
Nanoscale 8 (2), 1216-1216, 2016
102016
Resolidified Chalcogen‐Assisted Growth of Bilayer Semiconductors with Controlled Stacking Orders
Q Wu, L He, D Wang, H Nong, J Wang, Z Cai, S Zhao, R Zheng, S Lai, ...
Small 20 (2), 2305506, 2024
32024
Room-temperature bipolar valleytronic transistor in MoS2/WSe2 heterostructures
C Jiang, A Rasmita, H Ma, Q Tan, Z Huang, S Lai, S Liu, X Liu, Q Xiong, ...
arXiv preprint arXiv:2102.03756, 2021
32021
Non-centrosymmetric topological phase probed by non-linear Hall effect
N Wang, JY You, A Wang, X Zhou, Z Zhang, S Lai, YP Feng, H Lin, ...
National Science Review 11 (6), nwad103, 2024
22024
Electrically tunable Γ–Q interlayer excitons in twisted MoSe2 bilayers
J Huang, Z Xiong, J He, X Wu, K Watanabe, T Taniguchi, S Lai, T Zhang, ...
Journal of Materials Science & Technology 207, 70-75, 2025
12025
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