Harald Okorn-Schmidt (HF Schmidt)
Harald Okorn-Schmidt (HF Schmidt)
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Zitiert von
Zitiert von
EAU guidelines on prostate cancer
G Aus, CC Abbou, M Bolla, A Heidenreich, HP Schmid, H Van Poppel, ...
European urology 48 (4), 546-551, 2005
Ultrathin high-K metal oxides on silicon: processing, characterization and integration issues
EP Gusev, E Cartier, DA Buchanan, M Gribelyuk, M Copel, ...
Microelectronic Engineering 59 (1-4), 341-349, 2001
Ultrathin high-K gate stacks for advanced CMOS devices
EP Gusev, DA Buchanan, E Cartier, A Kumar, D DiMaria, S Guha, ...
International Electron Devices Meeting. Technical Digest (Cat. No. 01CH37224 …, 2001
Physical and electrical characterization of Hafnium oxide and Hafnium silicate sputtered films
A Callegari, E Cartier, M Gribelyuk, HF Okorn-Schmidt, T Zabel
Journal of Applied Physics 90 (12), 6466-6475, 2001
EAU guidelines on prostate cancer
G Aus, CC Abbou, D Pacik, HP Schmid, H Van Poppel, JM Wolff, F Zattoni
European urology 40 (2), 97-101, 2001
Characterization of silicon surface preparation processes for advanced gate dielectrics
HF Okorn-Schmidt
ibm Journal of Research and Development 43 (3), 351-326, 1999
The IMEC clean: A new concept for particle and metal removal on Si surfaces
M Meuris, PW Mertens, A Opdebeeck, HF Schmidt, M Depas, G Vereecke, ...
Solid State Technology 38 (7), 109-113, 1995
High mobility p-channel germanium MOSFETs with a thin Ge oxynitride gate dielectric
H Shang, H Okorn-Schmidt, KK Chan, M Copel, JA Ott, PM Kozlowski, ...
Digest. International Electron Devices Meeting,, 441-444, 2002
Interfacial oxidation process for high-k gate dielectric process integration
AW Ballantine, DA Buchanan, EA Cartier, KK Chan, MW Copel, ...
US Patent 6,444,592, 2002
80 nm polysilicon gated n-FETs with ultra-thin Al/sub 2/O/sub 3/gate dielectric for ULSI applications
DA Buchanan, EP Gusev, E Cartier, H Okorn-Schmidt, K Rim, ...
International Electron Devices Meeting 2000. Technical Digest. IEDM (Cat. No …, 2000
High temperature stability of dielectrics on Si: Interfacial metal diffusion and mobility degradation
S Guha, EP Gusev, H Okorn-Schmidt, M Copel, LÅ Ragnarsson, ...
Applied Physics Letters 81 (16), 2956-2958, 2002
Ultrathin high-K dielectrics grown by atomic layer deposition: a comparative study of ZrO2, HfO2, Y2O3 and Al2O3
EP Gusev, E Cartier, M Copel, M Gribelyuk, D Buchanan, ...
Electrochemical Society Proceedings 9, 189-195, 2001
Impact of the electrochemical properties of silicon wafer surfaces on copper outplating from HF solutions
I Teerlinck, PW Mertens, HF Schmidt, M Meuris, MM Heyns
Journal of The Electrochemical Society 143 (10), 3323, 1996
Sonic cleaning with an interference signal
EE Fisch, GW Gale, HF Okorn-Schmidt, WA Syverson
US Patent 6,276,370, 2001
Particle cleaning technologies to meet advanced semiconductor device process requirements
HF Okorn-Schmidt, F Holsteyns, A Lippert, D Mui, M Kawaguchi, ...
ECS Journal of Solid State Science and Technology 3 (1), N3069, 2013
H2O2 decomposition and its impact on silicon surface roughening and gate oxide integrity
HF Schmidt, M Meuris, PW Mertens, ALP Rotondaro, MM Heyns, TQ Hurd, ...
Japanese journal of applied physics 34 (2S), 727, 1995
New wet cleaning strategies for obtaining highly reliable thin oxides
MM Heyns, S Verhaverbeke, M Meuris, PP Mertens, H Schmidt, M Kubota, ...
MRS Online Proceedings Library (OPL) 315, 35, 1993
IEDM Tech. Dig.
EP Gusev, DA Buchanan, E Cartier, A Kumar, D DiMaria, S Guha, ...
P451, 2001
Tumour markers in prostate cancer: EGTM recommendations
A Semjonow, W Albrecht, P Bialk, A Gerl, R Lamerz, HP Schmidt, ...
Anticancer research 19, 2785-2820, 1999
High-dielectric constant insulators for FEOL capacitors
AW Ballantine, DA Buchanan, EA Cartier, DD Coolbaugh, EP Gousev, ...
US Patent 6,511,873, 2003
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