A 230–260-GHz Wideband and High-Gain Amplifier in 65-nm CMOS Based on Dual-Peak -Core DW Park, DR Utomo, BH Lam, SG Lee, JP Hong
IEEE Journal of Solid-State Circuits 54 (6), 1613-1623, 2019
69 2019 A 280-/300-GHz three-stage amplifiers in 65-nm CMOS with 12-/9-dB gain and 1.6/1.4% PAE while dissipating 17.9 mW DW Park, DR Utomo, BH Lam, JP Hong, SG Lee
IEEE Microwave and Wireless Components Letters 28 (1), 79-81, 2017
38 2017 The evolution of channelization receiver architecture: Principles and design challenges J Kim, DR Utomo, A Dissanayake, SK Han, SG Lee
IEEE Access 5, 25385-25395, 2017
18 2017 An 80 MHz bandwidth and 26.8 dBm OOB IIP3 transimpedance amplifier with improved nested feedforward compensation and multi-order filtering H Jung, DR Utomo, SK Han, J Kim, SG Lee
IEEE Transactions on Circuits and Systems I: Regular Papers 67 (10), 3410-3421, 2020
17 2020 Interleaved bidirectional dc-dc converter operation strategies and problem challenges: an overview MN Syah, E Firmansyah, DR Utomo
2022 IEEE International Conference in Power Engineering Application (ICPEA), 1-6, 2022
16 2022 Wide locking-range frequency multiplier by 1.5 employing quadrature injection-locked frequency tripler with embedded notch filtering S Shin, DR Utomo, H Jung, SK Han, J Kim, SG Lee
IEEE Transactions on Microwave Theory and Techniques 67 (12), 4791-4802, 2019
15 2019 A D-Band Power Amplifier in 65-nm CMOS by Adopting Simultaneous Output Power-and Gain-Matched Gmax -Core DW Park, DR Utomo, B Yun, HU Mahmood, SG Lee
IEEE Access 9, 99039-99049, 2021
14 2021 Design of High-Gain Sub-THz Regenerative Amplifiers Based on Double-G max Gain Boosting Technique DW Park, DR Utomo, B Yun, HU Mahmood, JP Hong, SG Lee
IEEE Journal of Solid-State Circuits 56 (11), 3388-3398, 2021
14 2021 A fully integrated 490-GHz CMOS heterodyne imager adopting second subharmonic resistive mixer structure KS Choi, DR Utomo, SG Lee
IEEE Microwave and Wireless Components Letters 29 (10), 673-676, 2019
10 2019 A 230–260GHz wideband amplifier in 65nm CMOS based on dual-peak Gmax -core DW Park, DR Utomo, JP Hong, SG Lee
2017 Symposium on VLSI Circuits, C300-C301, 2017
10 2017 A 247 and 272 GHz Two-Stage Regenerative Amplifiers in 65 nm CMOS with 18 and 15 dB Gain Based on Double-Gmax Gain Boosting Technique DW Park, DR Utomo, JP Hong, K Vaesen, P Wambacq, SG Lee
2020 IEEE Symposium on VLSI Circuits, 1-2, 2020
9 2020 High-power 268-GHz push-push transformer-based oscillator with capacitive degeneration DR Utomo, DW Park, SG Lee, JP Hong
IEEE Microwave and Wireless Components Letters 28 (7), 612-614, 2018
9 2018 29.7 a 490GHz 32mw fully integrated CMOS receiver adopting dual-locking FLL KS Choi, DR Utomo, KM Kim, BH Yun, SG Lee, IY Lee
2020 IEEE International Solid-State Circuits Conference-(ISSCC), 452-454, 2020
8 2020 A 30–40 GHz CMOS receiver front-end with 5.9 dB NF and 16.5 dB conversion gain for broadband spectrum sensing applications H Jung, DR Utomo, S Shin, SK Han, SG Lee, J Kim
Electronics 8 (5), 593, 2019
6 2019 A 27 dB Sidelobe Suppression, 1.12 GHz BW−10dB UWB Pulse Generator With Process Compensation HU Mahmood, DR Utomo, J Kim, SG Lee
IEEE Transactions on Circuits and Systems II: Express Briefs 68 (8), 2805-2809, 2021
5 2021 A 201- and 283-GHz Dual-Band Amplifier in 65-Nm CMOS Adopting Dual-Frequency -Core With Dual-Band Matching DW Park, B Yun, DR Utomo, JP Hong, SG Lee
IEEE Transactions on Terahertz Science and Technology 13 (3), 221-230, 2023
4 2023 A 293/440 GHz push-push double feedback oscillators with 5.0/− 3.9 dBm output power and 2.9/0.6% DC-to-RF efficiency in 65 nm CMOS DR Utomo, DW Park, B Yun, SG Lee
2020 IEEE Symposium on VLSI Circuits, 1-2, 2020
4 2020 A Fully Integrated 490-GHz CMOS Receiver Adopting Dual-Locking Receiver-Based FLL KS Choi, KM Kim, DR Utomo, IY Lee, SG Lee
IEEE Journal of Solid-State Circuits 57 (9), 2626-2639, 2022
3 2022 A 264 GHz, 2.3 dBm Push-Push Transformer-Based Hartley Oscillator DR Utomo, DW Park, JP Hong, SG Lee
IEEE Microwave and Wireless Components Letters 31 (7), 893 - 896, 2021
3 2021 A Ku -Band RF Front-End Employing Broadband Impedance Matching with 3.5 dB NF and 21 dB Conversion Gain in 45-nm CMOS Technology HU Mahmood, DR Utomo, SK Han, J Kim, SG Lee
Electronics 9 (3), 539, 2020
3 2020