| Broadband reflective optical limiter using GST phase change material A Sarangan, J Duran, V Vasilyev, N Limberopoulos, I Vitebskiy, I Anisimov IEEE Photonics Journal 10 (2), 1-9, 2018 | 91 | 2018 |
| Increasing sensitivity and angle-of-view of mid-wave infrared detectors by integration with dielectric microspheres KW Allen, F Abolmaali, JM Duran, G Ariyawansa, NI Limberopoulos, ... Applied Physics Letters 108 (24), 2016 | 62 | 2016 |
| Photodetector focal plane array systems and methods VN Astratov, KW Allen Jr, NI Limberopoulos, A Urbas, JM Duran US Patent 9,362,324, 2016 | 38 | 2016 |
| Design and modeling of InAs/GaSb type II superlattice based dual-band infrared detectors G Ariyawansa, M Grupen, JM Duran, JE Scheihing, TR Nelson, ... Journal of Applied Physics 111 (7), 2012 | 38 | 2012 |
| InAs/InAsSb strained-layer superlattice mid-wavelength infrared detector for high-temperature operation G Ariyawansa, J Duran, C Reyner, J Scheihing Micromachines 10 (12), 806, 2019 | 34 | 2019 |
| InGaAs/InAsSb strained layer superlattices for mid-wave infrared detectors G Ariyawansa, CJ Reyner, EH Steenbergen, JM Duran, JD Reding, ... Applied Physics Letters 108 (2), 2016 | 34 | 2016 |
| Schottky-barrier photodiode internal quantum efficiency dependence on nickel silicide film thickness J Duran, A Sarangan IEEE Photonics Journal 11 (1), 1-15, 2019 | 31 | 2019 |
| Modified electron beam induced current technique for in (Ga) As/InAsSb superlattice infrared detectors N Yoon, CJ Reyner, G Ariyawansa, JM Duran, JE Scheihing, J Mabon, ... Journal of Applied Physics 122 (7), 2017 | 29 | 2017 |
| Photonic jets for strained-layer superlattice infrared photodetector enhancement KW Allen, JM Duran, G Ariyawansa, JH Vella, NI Limberopoulos, ... NAECON 2014-IEEE National Aerospace and Electronics Conference, 32-33, 2014 | 25 | 2014 |
| Microconical silicon mid-IR concentrators: spectral, angular and polarization response B Jin, GW Bidney, A Brettin, NI Limberopoulos, JM Duran, G Ariyawansa, ... Optics Express 28 (19), 27615-27627, 2020 | 23 | 2020 |
| Fabrication of ultrahigh aspect ratio silicon nanostructures using self-assembled gold metal-assisted chemical etching JM Duran, A Sarangan Journal of Micro/Nanolithography, MEMS, and MOEMS 16 (1), 014502-014502, 2017 | 23 | 2017 |
| Absorption characteristics of mid-wave infrared type-II superlattices G Ariyawansa, E Steenbergen, LJ Bissell, JM Duran, JE Scheihing, ... Infrared Technology and Applications XL 9070, 446-460, 2014 | 21 | 2014 |
| Unipolar infrared detectors based on InGaAs/InAsSb ternary superlattices G Ariyawansa, CJ Reyner, JM Duran, JD Reding, JE Scheihing, ... Applied Physics Letters 109 (2), 2016 | 20 | 2016 |
| Approaches to low-cost infrared sensing CJ Reyner, G Ariyawansa, B Claflin, JM Duran, GJ Grzybowski Applied Optics 60 (25), G162-G169, 2021 | 16 | 2021 |
| Proton irradiation effects on InGaAs/InAsSb mid-wave barrier infrared detectors RA Carrasco, J George, D Maestas, ZM Alsaad, D Garnham, CP Morath, ... Journal of Applied Physics 130 (11), 2021 | 15 | 2021 |
| Light-harvesting microconical arrays for enhancing infrared imaging devices: Proposal and demonstration B Jin, A Brettin, GW Bidney, NI Limberopoulos, JM Duran, G Ariyawansa, ... Applied Physics Letters 119 (5), 2021 | 15 | 2021 |
| Silicon-based infrared photodetectors for low-cost imaging applications J Duran University of Dayton, 2019 | 15 | 2019 |
| A recent review of mid-wavelength infrared type-II superlattices: carrier localization, device performance, and radiation tolerance EH Steenbergen, G Ariyawansa, CJ Reyner, GD Jenkins, CP Morath, ... Quantum Sensing and Nano Electronics and Photonics XIV 10111, 1011104, 2017 | 14 | 2017 |
| Effects of doping and minority carrier lifetime on mid-wave infrared InGaAs/InAsSb superlattice nBn detector performance AT Newell, JV Logan, RA Carrasco, ZM Alsaad, CP Hains, JM Duran, ... Applied Physics Letters 122 (17), 2023 | 13 | 2023 |
| Multispectral imaging with type II superlattice detectors G Ariyawansa, JM Duran, M Grupen, JE Scheihing, TR Nelson, ... Infrared Technology and Applications XXXVIII 8353, 154-167, 2012 | 13 | 2012 |
