Mohamed Missous
Mohamed Missous
Professor of Semiconductor Materials and Devices
Bestätigte E-Mail-Adresse bei
Zitiert von
Zitiert von
Optimization of photomixers and antennas for continuous-wave terahertz emission
IS Gregory, C Baker, WR Tribe, IV Bradley, MJ Evans, EH Linfield, ...
IEEE Journal of Quantum electronics 41 (5), 717-728, 2005
Unidirectional electron flow in a nanometer-scale semiconductor channel: A self-switching device
AM Song, M Missous, P Omling, AR Peaker, L Samuelson, W Seifert
Applied Physics Letters 83 (9), 1881-1883, 2003
High resistivity annealed low-temperature GaAs with 100 fs lifetimes
IS Gregory, C Baker, WR Tribe, MJ Evans, HE Beere, EH Linfield, ...
Applied physics letters 83 (20), 4199-4201, 2003
Continuous-wave terahertz system with a 60 dB dynamic range
IS Gregory, WR Tribe, C Baker, BE Cole, MJ Evans, L Spencer, M Pepper, ...
Applied Physics Letters 86 (20), 2005
Microwave detection at 110 GHz by nanowires with broken symmetry
C Balocco, AM Song, M Åberg, A Forchel, T González, J Mateos, ...
Nano Letters 5 (7), 1423-1427, 2005
Submicron sensors of local electric field with single-electron resolution at room temperature
II Barbolina, KS Novoselov, SV Morozov, SV Dubonos, M Missous, ...
Applied physics letters 88 (1), 2006
Nano-tesla magnetic field magnetometry using an InGaAs–AlGaAs–GaAs 2DEG Hall sensor
N Haned, M Missous
Sensors and Actuators A: Physical 102 (3), 216-222, 2003
Room-temperature operations of memory devices based on self-assembled InAs quantum dot structures
C Balocco, AM Song, M Missous
Applied physics letters 85 (24), 5911-5913, 2004
Terahertz pulsed imaging with 1.06 μm laser excitation
C Baker, IS Gregory, WR Tribe, IV Bradley, MJ Evans, M Withers, ...
Applied physics letters 83 (20), 4113-4115, 2003
Direct demonstration of the ‘virtual gate’mechanism for current collapse in AlGaN/GaN HFETs
AM Wells, MJ Uren, RS Balmer, KP Hilton, T Martin, M Missous
Solid-state electronics 49 (2), 279-282, 2005
Nonstoichiometry and dopants related phenomena in low temperature GaAs grown by molecular beam epitaxy
M Missous, S O’Hagan
Journal of applied physics 75 (7), 3396-3401, 1994
Evidence for substitutional-interstitial defect motion leading to DX behavior by donors in Al x Ga 1− x As
L Dobaczewski, P Kaczor, M Missous, AR Peaker, Z Żytkiewicz
Physical review letters 68 (16), 2508, 1992
Phase sensitive continuous-wave THz imaging using diode lasers
IS Gregory, WR Tribe, BE Cole, C Baker, MJ Evans, IV Bradley, ...
Electronics Letters 40 (2), 1, 2004
Thermal stability of epitaxial Al/GaAs Schottky barriers prepared by molecular‐beam epitaxy
M Missous, EH Rhoderick, KE Singer
Journal of applied physics 59 (9), 3189-3195, 1986
All-optoelectronic terahertz system using low-temperature-grown InGaAs photomixers
C Baker, IS Gregory, MJ Evans, WR Tribe, EH Linfield, M Missous
Optics express 13 (23), 9639-9644, 2005
Coexistence of deep levels with optically active InAs quantum dots
SW Lin, C Balocco, M Missous, AR Peaker, AM Song
Physical Review B 72 (16), 165302, 2005
On the Richardson constant for aluminum/gallium arsenide Schottky diodes
M Missous, EH Rhoderick
Journal of applied physics 69 (10), 7142-7145, 1991
Under pressure: Control of strain, phonons and bandgap opening in rippled graphene
U Monteverde, J Pal, MA Migliorato, M Missous, U Bangert, R Zan, ...
Carbon 91, 266-274, 2015
Highly resistive annealed low-temperature-grown InGaAs with sub-500fs carrier lifetimes
C Baker, IS Gregory, WR Tribe, IV Bradley, MJ Evans, EH Linfield, ...
Applied Physics Letters 85 (21), 4965-4967, 2004
Stoichiometric low‐temperature GaAs and AlGaAs: A reflection high‐energy electron‐diffraction study
M Missous
Journal of applied physics 78 (7), 4467-4471, 1995
Das System kann den Vorgang jetzt nicht ausführen. Versuchen Sie es später erneut.
Artikel 1–20