Dielectric breakdown mechanisms in gate oxides S Lombardo, JH Stathis, BP Linder, KL Pey, F Palumbo, CH Tung
Journal of applied physics 98 (12), 2005
549 2005 Crystal grain nucleation in amorphous silicon C Spinella, S Lombardo, F Priolo
Journal of Applied physics 84 (10), 5383-5414, 1998
452 1998 A Review on Dielectric Breakdown in Thin Dielectrics: Silicon Dioxide, High‐k , and Layered Dielectrics F Palumbo, C Wen, S Lombardo, S Pazos, F Aguirre, M Eizenberg, F Hui, ...
Advanced Functional Materials 30 (18), 1900657, 2020
193 2020 Room‐temperature luminescence from Er‐implanted semi‐insulating polycrystalline silicon S Lombardo, SU Campisano, GN Van den Hoven, A Cacciato, A Polman
Applied physics letters 63 (14), 1942-1944, 1993
151 1993 Silicon planar technology for single-photon optical detectors E Sciacca, AC Giudice, D Sanfilippo, F Zappa, S Lombardo, R Consentino, ...
IEEE Transactions on Electron Devices 50 (4), 918-925, 2003
142 2003 The impact of gate-oxide breakdown on SRAM stability R Rodriguez, JH Stathis, BP Linder, S Kowalczyk, CT Chuang, RV Joshi, ...
IEEE Electron Device Letters 23 (9), 559-561, 2002
137 2002 Erbium in oxygen‐doped silicon: Optical excitation GN Van den Hoven, JH Shin, A Polman, S Lombardo, SU Campisano
Journal of applied physics 78 (4), 2642-2650, 1995
122 1995 Voltage dependence of hard breakdown growth and the reliability implication in thin dielectrics BP Linder, S Lombardo, JH Stathis, A Vayshenker, DJ Frank
IEEE Electron Device Letters 23 (11), 661-663, 2002
121 2002 How far will silicon nanocrystals push the scaling limits of NVMs technologies? B De Salvo, C Gerardi, S Lombardo, T Baron, L Perniola, D Mariolle, ...
IEEE International Electron Devices Meeting 2003, 26.1. 1-26.1. 4, 2003
114 2003 Microscopy study of the conductive filament in HfO2 resistive switching memory devices S Privitera, G Bersuker, B Butcher, A Kalantarian, S Lombardo, ...
Microelectronic Engineering 109, 75-78, 2013
113 2013 Silicon nanocrystal memories S Lombardo, B De Salvo, C Gerardi, T Baron
Microelectronic Engineering 72 (1-4), 388-394, 2004
112 2004 Percolation path and dielectric-breakdown-induced-epitaxy evolution during ultrathin gate dielectric breakdown transient CH Tung, KL Pey, LJ Tang, MK Radhakrishnan, WH Lin, F Palumbo, ...
Applied Physics Letters 83 (11), 2223-2225, 2003
110 2003 Performance and reliability features of advanced nonvolatile memories based on discrete traps (silicon nanocrystals, SONOS) B De Salvo, C Gerardi, R van Schaijk, SA Lombardo, D Corso, ...
IEEE Transactions on Device and Materials reliability 4 (3), 377-389, 2004
104 2004 Degradation and hard breakdown transient of thin gate oxides in capacitors: Dependence on oxide thickness S Lombardo, A La Magna, C Spinella, C Gerardi, F Crupi
Journal of applied physics 86 (11), 6382-6391, 1999
99 1999 Erbium in oxygen‐doped silicon: Electroluminescence S Lombardo, SU Campisano, GN Van den Hoven, A Polman
Journal of applied physics 77 (12), 6504-6510, 1995
84 1995 Growth and scaling of oxide conduction after breakdown BP Linder, JH Stathis, DJ Frank, S Lombardo, A Vayshenker
2003 IEEE International Reliability Physics Symposium Proceedings, 2003 …, 2003
76 2003 Electrical and thermal transient during dielectric breakdown of thin oxides in metal- -silicon capacitors S Lombardo, F Crupi, A La Magna, C Spinella, A Terrasi, A La Mantia, ...
Journal of applied physics 84 (1), 472-479, 1998
68 1998 Reduction of fixed charges in atomic layer deposited Al2O3 dielectrics J Buckley, B De Salvo, D Deleruyelle, M Gely, G Nicotra, S Lombardo, ...
Microelectronic Engineering 80, 210-213, 2005
67 2005 Dark current in silicon photomultiplier pixels: Data and model R Pagano, D Corso, S Lombardo, G Valvo, DN Sanfilippo, G Fallica, ...
IEEE transactions on electron devices 59 (9), 2410-2416, 2012
65 2012 Conductive filament structure in HfO2 resistive switching memory devices S Privitera, G Bersuker, S Lombardo, C Bongiorno, DC Gilmer
Solid-State Electronics 111, 161-165, 2015
61 2015