| Principle of direct van der Waals epitaxy of single-crystalline films on epitaxial graphene J Kim, C Bayram, H Park, CW Cheng, C Dimitrakopoulos, JA Ott, ... Nature communications 5 (1), 4836, 2014 | 415 | 2014 |
| Epitaxial lift-off process for gallium arsenide substrate reuse and flexible electronics CW Cheng, KT Shiu, N Li, SJ Han, L Shi, DK Sadana Nature communications 4 (1), 1577, 2013 | 348 | 2013 |
| Growth of highly tensile-strained Ge on relaxed InxGa1− xAs by metal-organic chemical vapor deposition Y Bai, KE Lee, C Cheng, ML Lee, EA Fitzgerald Journal of Applied Physics 104 (8), 2008 | 153 | 2008 |
| Towards large size substrates for III-V co-integration made by direct wafer bonding on Si N Daix, E Uccelli, L Czornomaz, D Caimi, C Rossel, M Sousa, H Siegwart, ... APL materials 2 (8), 2014 | 90 | 2014 |
| The effect of interface processing on the distribution of interfacial defect states and the CV characteristics of III-V metal-oxide-semiconductor field effect transistors CW Cheng, G Apostolopoulos, EA Fitzgerald Journal of Applied Physics 109 (2), 2011 | 71 | 2011 |
| III-V finFETs on silicon substrate A Basu, CW Cheng, A Majumdar, RM Martin, U Rana, DK Sadana, ... US Patent 8,937,299, 2015 | 60 | 2015 |
| Memory characteristics of Pt nanocrystals self-assembledfrom reduction of an embedded PtOx ultrathin film in metal-oxide-semiconductor structures JY Tseng, CW Cheng, SY Wang, TB Wu, KY Hsieh, R Liu Applied physics letters 85 (13), 2595-2597, 2004 | 59 | 2004 |
| In situ metal-organic chemical vapor deposition atomic-layer deposition of aluminum oxide on GaAs using trimethyaluminum and isopropanol precursors CW Cheng, EA Fitzgerald Applied Physics Letters 93 (3), 2008 | 58 | 2008 |
| Cubic phase gan on nano‐grooved Si (100) via maskless selective area epitaxy C Bayram, JA Ott, KT Shiu, CW Cheng, Y Zhu, J Kim, M Razeghi, ... Advanced Functional Materials 24 (28), 4492-4496, 2014 | 55 | 2014 |
| Ultra-High Endurance and Low IOFF Selector based on AsSeGe Chalcogenides for Wide Memory Window 3D Stackable Crosspoint Memory HY Cheng, WC Chien, IT Kuo, CW Yeh, L Gignac, W Kim, EK Lai, YF Lin, ... 2018 IEEE International Electron Devices Meeting (IEDM), 37.3. 1-37.3. 4, 2018 | 51 | 2018 |
| Vertical field effect transistors with controlled overlap between gate electrode and source/drain contacts A Basu, CW Cheng, WE Haensch, A Majumdar, KT Shiu US Patent 9,287,362, 2016 | 50 | 2016 |
| Iii-v finfets on silicon substrate A Basu, CW Cheng, A Majumdar, RM Martin, U Rana, DK Sadana, ... US Patent App. 13/800,398, 2014 | 37 | 2014 |
| Self-cleaning and surface recovery with arsine pretreatment in ex situ atomic-layer-deposition of Al2O3 on GaAs CW Cheng, J Hennessy, D Antoniadis, EA Fitzgerald Applied Physics Letters 95 (8), 2009 | 35 | 2009 |
| Projected mushroom type phase‐change memory S Ghazi Sarwat, TM Philip, CT Chen, B Kersting, RL Bruce, CW Cheng, ... Advanced Functional Materials 31 (49), 2106547, 2021 | 32 | 2021 |
| High-performance CMOS-compatible self-aligned In0.53Ga0.47As MOSFETs with GMSAT over 2200 µS/µm at VDD = 0.5 V Y Sun, A Majumdar, CW Cheng, RM Martin, RL Bruce, JB Yau, DB Farmer, ... 2014 IEEE International Electron Devices Meeting, 25.3. 1-25.3. 4, 2014 | 24 | 2014 |
| Comprehensive scaling study on 3D cross-point PCM toward 1Znm node for SCM applications WC Chien, HY Ho, CW Yeh, CH Yang, HY Cheng, W Kim, IT Kuo, ... 2019 Symposium on VLSI Technology, T60-T61, 2019 | 23 | 2019 |
| High performance InGaAs gate-all-around nanosheet FET on Si using template assisted selective epitaxy S Lee, CW Cheng, X Sun, C D'Emic, H Miyazoe, MM Frank, M Lofaro, ... 2018 IEEE International Electron Devices Meeting (IEDM), 39.5. 1-39.5. 4, 2018 | 23 | 2018 |
| High performance and low leakage current InGaAs-on-silicon FinFETs with 20 nm gate length X Sun, C D'Emic, CW Cheng, A Majumdar, Y Sun, E Cartier, RL Bruce, ... 2017 Symposium on VLSI Technology, T40-T41, 2017 | 23 | 2017 |
| Self-aligned III-V MOSFETs: Towards a CMOS compatible and manufacturable technology solution Y Sun, A Majumdar, CW Cheng, YH Kim, U Rana, RM Martin, RL Bruce, ... 2013 IEEE International Electron Devices Meeting, 2.7. 1-2.7. 4, 2013 | 21 | 2013 |
| Si incorporation into AsSeGe chalcogenides for high thermal stability, high endurance and extremely low Vth drift 3D stackable cross-point memory HY Cheng, IT Kuo, WC Chien, CW Yeh, YC Chou, N Gong, L Gignac, ... 2020 IEEE Symposium on VLSI Technology, 1-2, 2020 | 20 | 2020 |
Devendra SadanaibmBestätigte E-Mail-Adresse bei us.ibm.com
