A calibration method for group V fluxes and impact of V/III flux ratio on the growth of InAs/InAsSb type-II superlattices by molecular beam epitaxy H Li, S Liu, OO Cellek, D Ding, XM Shen, EH Steenbergen, J Fan, Z Lin, ... Journal of crystal growth 378, 145-149, 2013 | 19 | 2013 |
Impact of substrate temperature on the structural and optical properties of strain-balanced InAs/InAsSb type-II superlattices grown by molecular beam epitaxy S Liu, H Li, OO Cellek, D Ding, XM Shen, ZY Lin, EH Steenbergen, J Fan, ... Applied Physics Letters 102 (7), 2013 | 19 | 2013 |
Investigation on the origin of crystallographic tilt in lateral epitaxial overgrown GaN using selective etching G Feng, XH Zheng, Y Fu, JJ Zhu, XM Shen, BS Zhang, DG Zhao, ... Journal of crystal growth 240 (3-4), 368-372, 2002 | 19 | 2002 |
Study of InAs/InAsSb type-II superlattices using high-resolution x-ray diffraction and cross-sectional electron microscopy XM Shen, H Li, S Liu, DJ Smith, YH Zhang Journal of crystal growth 381, 1-5, 2013 | 17 | 2013 |
Optimization of cubic GaN growth by metalorganic chemical vapor deposition based on residual strain relaxation ZH Feng, H Yang, XH Zheng, Y Fu, YP Sun, XM Shen, YT Wang Applied physics letters 82 (2), 206-208, 2003 | 15 | 2003 |
An indirect method of studying band alignments in nBn photodetectors using off-axis electron holography XM Shen, ZY He, S Liu, ZY Lin, YH Zhang, DJ Smith, MR McCartney Applied Physics Letters 107 (12), 2015 | 9 | 2015 |
Atomic resolution of interface diffusing in short-period InAs/GaSb superlattice J Cui, Y Yao, DW Jiang, GW Wang, YG Wang, X Shen, RC Yu Journal of Applied Physics 124 (24), 2018 | 8 | 2018 |
Structural characterization of epitaxial lateral overgrown GaN on patterned GaN/GaAs (0 0 1) substrates XM Shen, Y Fu, G Feng, BS Zhang, ZH Feng, YT Wang, H Yang Journal of crystal growth 246 (1-2), 69-72, 2002 | 7 | 2002 |
X-ray diffraction analysis of MOCVD grown GaN buffer layers on GaAs (0 0 1) substrates XM Shen, YT Wang, XH Zheng, BS Zhang, J Chen, G Feng, H Yang Journal of crystal growth 254 (1-2), 23-27, 2003 | 6 | 2003 |
InAs/InAsSb Type-II superlattice: a promising material for mid-wavelength and long-wavelength infrared applications OO Cellek, H Li, XM Shen, Z Lin, EH Steenbergen, D Ding, S Liu, ... Infrared Technology and Applications XXXVIII 8353, 1173-1178, 2012 | 5 | 2012 |
Selective area growth of GaN on GaAs (0 0 1) substrates by metalorganic vapor-phase epitaxy XM Shen, G Feng, BS Zhang, LH Duan, YT Wang, H Yang Journal of crystal growth 252 (1-3), 9-13, 2003 | 5 | 2003 |
InAs/InAs1_xSbx superlattices on GaSb substrates: A promising material system for mid-and long-wavelength infrared detectors EH Steenbergen, OO Cellek, H Li, S Liu, X Shen, D Smith, YH Zhang The Wonder of Nanotechnology: Quantum Optoelectronic Devices and …, 2013 | 2 | 2013 |
Study of structural, optical and electrical properties of inas/inassb superlattices using multiple characterization techniques X Shen Arizona State University, 2015 | 1 | 2015 |
Reduction in crystallographic tilt of lateral epitaxial overgrown GaN by using new patterned shape mask G Feng, XM Shen, JJ Zhu, BS Zhang, H Yang, JW Liang physica status solidi (c), 2167-2170, 2003 | 1 | 2003 |
High-resolution X-ray diffraction analysis of the Bragg peak integrated intensity in highly mismatched III-N epilayers G Feng, XM Shen, JJ Zhu, BS Zhang, DG Zhao, YT Wang, H Yang, ... Journal of Crystal Growth 250 (3-4), 354-358, 2003 | 1 | 2003 |
Determination of Heterointerface Band Alignments in nBn Photodetectors Using Off-Axis Electron Holography XM Shen, ZY He, S Liu, YH Zhang, D Smith, M McCartney Bulletin of the American Physical Society 60, 2015 | | 2015 |
InAs/InAs1_xSbx superlattices on GaSb substrates EH Steenbergen, OO Cellek, H Li, S Liu, X Shen, D Smith, YH Zhang SPIE, 2013 | | 2013 |