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Cecile Grezes
Cecile Grezes
LYNRED / CEA / UCLA
Bestätigte E-Mail-Adresse bei seas.ucla.edu - Startseite
Titel
Zitiert von
Zitiert von
Jahr
Hybrid quantum circuit with a superconducting qubit coupled to a spin ensemble
Y Kubo, C Grezes, A Dewes, T Umeda, J Isoya, H Sumiya, N Morishita, ...
Physical review letters 107 (22), 220501, 2011
4782011
Ultra-low switching energy and scaling in electric-field-controlled nanoscale magnetic tunnel junctions with high resistance-area product
C Grezes, F Ebrahimi, JG Alzate, X Cai, JA Katine, J Langer, B Ocker, ...
Applied Physics Letters 108 (1), 2016
2402016
Flux qubits with long coherence times for hybrid quantum circuits
M Stern, G Catelani, Y Kubo, C Grezes, A Bienfait, D Vion, D Esteve, ...
Physical review letters 113 (12), 123601, 2014
1842014
Electric-field-controlled magnetoelectric RAM: Progress, challenges, and scaling
PK Amiri, JG Alzate, XQ Cai, F Ebrahimi, Q Hu, K Wong, C Grèzes, H Lee, ...
IEEE Transactions on Magnetics 51 (11), 1-7, 2015
1812015
Multimode storage and retrieval of microwave fields in a spin ensemble
C Grezes, B Julsgaard, Y Kubo, M Stern, T Umeda, J Isoya, H Sumiya, ...
Physical Review X 4 (2), 021049, 2014
1622014
Quantum memory for microwave photons in an inhomogeneously broadened spin ensemble
B Julsgaard, C Grezes, P Bertet, K Mølmer
Physical review letters 110 (25), 250503, 2013
1582013
Enhancement of voltage-controlled magnetic anisotropy through precise control of Mg insertion thickness at CoFeB| MgO interface
X Li, K Fitzell, D Wu, CT Karaba, A Buditama, G Yu, KL Wong, N Altieri, ...
Applied Physics Letters 110 (5), 2017
1282017
Giant interfacial perpendicular magnetic anisotropy in MgO/CoFe/capping layer structures
S Peng, W Zhao, J Qiao, L Su, J Zhou, H Yang, Q Zhang, Y Zhang, ...
Applied Physics Letters 110 (7), 2017
902017
Storage and retrieval of microwave fields at the single-photon level in a spin ensemble
C. Grezes, B. Julsgaard, Y. Kubo, W. L. Ma, M. Stern, A. Bienfait, K ...
Physical review A 92 (020301), 2015
732015
Towards a Spin-Ensemble Quantum Memory for Superconducting Qubits: Design and Implementation of the Write, Read and Reset Steps
C Grèzes
Springer, 2015
68*2015
Write error rate and read disturbance in electric-field-controlled magnetic random-access memory
C Grezes, H Lee, A Lee, S Wang, F Ebrahimi, X Li, K Wong, JA Katine, ...
IEEE Magnetics Letters 8, 1-5, 2016
572016
Electron spin resonance detected by a superconducting qubit
Y Kubo, I Diniz, C Grezes, T Umeda, J Isoya, H Sumiya, T Yamamoto, ...
Physical Review B—Condensed Matter and Materials Physics 86 (6), 064514, 2012
542012
Perpendicular magnetic tunnel junction with W seed and capping layers
H Almasi, CL Sun, X Li, T Newhouse-Illige, C Bi, KC Price, S Nahar, ...
Journal of Applied Physics 121 (15), 2017
362017
In-plane magnetic field effect on switching voltage and thermal stability in electric-field-controlled perpendicular magnetic tunnel junctions
C Grezes, A Rojas Rozas, F Ebrahimi, JG Alzate, X Cai, JA Katine, ...
AIP Advances 6 (7), 2016
302016
Predictive materials design of magnetic random-access memory based on nanoscale atomic structure and element distribution
X Li, T Sasaki, C Grezes, D Wu, K Wong, C Bi, PV Ong, F Ebrahimi, G Yu, ...
Nano letters 19 (12), 8621-8629, 2019
252019
Spin-Torque Ferromagnetic Resonance in Stacks
C He, G Yu, C Grezes, J Feng, Z Zhao, SA Razavi, Q Shao, A Navabi, X Li, ...
Physical Review Applied 10 (3), 034067, 2018
252018
Hybrid VC-MTJ/CMOS non-volatile stochastic logic for efficient computing
S Wang, S Pal, T Li, A Pan, C Grezes, P Khalili-Amiri, KL Wang, P Gupta
Design, Automation & Test in Europe Conference & Exhibition (DATE), 2017 …, 2017
222017
A spintronic voltage-controlled stochastic oscillator for event-driven random sampling
H Lee, C Grezes, A Lee, F Ebrahimi, PK Amiri, KL Wang
IEEE Electron Device Letters 38 (2), 281-284, 2016
212016
MTJ variation monitor-assisted adaptive MRAM write
S Wang, H Lee, C Grezes, P Khalili, KL Wang, P Gupta
Proceedings of the 53rd Annual Design Automation Conference, 1-6, 2016
172016
Source line sensing in magneto-electric random-access memory to reduce read disturbance and improve sensing margin
H Lee, C Grezes, S Wang, F Ebrahimi, P Gupta, PK Amiri, KL Wang
IEEE Magnetics Letters 7, 1-5, 2016
172016
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