Folgen
Koustav Ganguly
Koustav Ganguly
Process Development, QuantumScape Battery
Bestätigte E-Mail-Adresse bei quantumscape.com
Titel
Zitiert von
Zitiert von
Jahr
Structure and transport in high pressure oxygen sputter-deposited BaSnO3− δ
K Ganguly, P Ambwani, P Xu, JS Jeong, KA Mkhoyan, C Leighton, ...
APL materials 3 (6), 2015
972015
Stabilization of intrinsic defects at high temperatures in ZnO nanoparticles by Ag modification
RK Sahu, K Ganguly, T Mishra, M Mishra, RS Ningthoujam, SK Roy, ...
Journal of colloid and interface science, 2011
882011
Mobility-electron density relation probed via controlled oxygen vacancy doping in epitaxial BaSnO3
K Ganguly, A Prakash, B Jalan, C Leighton
APL Materials 5 (5), 2017
672017
Critical thickness and strain relaxation in molecular beam epitaxy-grown SrTiO3 films
T Wang, K Ganguly, P Marshall, P Xu, B Jalan
Applied Physics Letters 103 (21), 2013
612013
Wide-voltage-window reversible control of electronic transport in electrolyte-gated epitaxial
H Wang, J Walter, K Ganguly, B Yu, G Yu, Z Zhang, H Zhou, H Fu, ...
Physical Review Materials 3 (7), 075001, 2019
302019
Microstructure characterization of BaSnO3 thin films on LaAlO3 and PrScO3 substrates from transmission electron microscopy
H Yun, K Ganguly, W Postiglione, B Jalan, C Leighton, KA Mkhoyan, ...
Scientific reports 8 (1), 10245, 2018
232018
APL Mater. 3, 062509 (2015)
K Ganguly, P Ambwani, P Xu, JS Jeong, KA Mkhoyan, C Leighton, ...
22
Electronic structure of BaSnO3 investigated by high-energy-resolution electron energy-loss spectroscopy and ab initio calculations
H Yun, M Topsakal, A Prakash, K Ganguly, C Leighton, B Jalan, ...
Journal of Vacuum Science & Technology A 36 (3), 2018
202018
Scattering mechanisms and mobility enhancement in epitaxial BaSnO3 thin films probed via electrolyte gating
H Wang, A Prakash, K Reich, K Ganguly, B Jalan, C Leighton
APL Materials 8 (7), 2020
162020
APL Mater. 5, 056102 (2017)
K Ganguly, A Prakash, B Jalan, C Leighton
14
Opportunities in 3-D stacked CMOS transistors
M Radosavljević, CY Huang, W Rachmady, SH Seung, NK Thomas, ...
2021 IEEE International Electron Devices Meeting (IEDM), 34.1. 1-34.1. 4, 2021
122021
Structure-property relationships and mobility optimization in sputtered La-doped films: Toward mobility
WM Postiglione, K Ganguly, H Yun, JS Jeong, A Jacobson, L Borgeson, ...
Physical Review Materials 5 (4), 044604, 2021
122021
Contact resistance reduction in transistor devices with metallization on both sides
K Ganguly, R Keech, S Rafique, GA Glass, AS Murthy, E Mannebach, ...
US Patent App. 16/911,771, 2021
112021
Rubrene Single-Crystal Transistors with Perfluoropolyether Liquid Dielectric: Exploiting Free Dipoles to Induce Charge Carriers at Organic Surfaces
X Ren, E Schmidt, J Walter, K Ganguly, C Leighton, CD Frisbie
The Journal of Physical Chemistry C 121 (12), 6540-6545, 2017
92017
APL Mater. 8, 071113 (2020)
H Wang, A Prakash, K Reich, K Ganguly, B Jalan, C Leighton
5
Gate-all-around integrated circuit structures having strained source or drain structures on insulator
A Agrawal, AS Murthy, C Bomberger, JT Kavalieros, K Ganguly, R Keech, ...
US Patent App. 16/912,127, 2021
22021
Uncovering the microstructure of BaSnCb thin films deposited on different substrates using TEM
H Yun, K Ganguly, W Postiglione, B Jalan, C Leighton, KA Mkhoyan, ...
Microscopy and Microanalysis 24 (S1), 2198-2199, 2018
22018
Gate-all-around integrated circuit structures having strained source or drain structures on gate dielectric layer
A Agrawal, AS Murthy, JT Kavalieros, K Ganguly, R Keech, S Chouksey, ...
US Patent App. 16/912,136, 2021
12021
Gate-all-around integrated circuit structures having strained dual nanoribbon channel structures
A Agrawal, B Mueller, JT Kavalieros, J Torres, K Jun, S Chouksey, ...
US Patent App. 16/913,333, 2021
12021
Structure and Transport in Epitaxial BaSnO3: Doping, Mobility and the Insulator-Metal Transition
K Ganguly
University of Minnesota, 2018
12018
Das System kann den Vorgang jetzt nicht ausführen. Versuchen Sie es später erneut.
Artikel 1–20