Didier Theron
Didier Theron
chercheur CNRS-IEMN NAM6
Bestätigte E-Mail-Adresse bei
Zitiert von
Zitiert von
Gallium nitride as an electromechanical material
M Rais-Zadeh, VJ Gokhale, A Ansari, M Faucher, D Théron, Y Cordier, ...
Journal of Microelectromechanical Systems 23 (6), 1252-1271, 2014
Current instabilities in GaN-based devices
I Daumiller, D Theron, C Gaquière, A Vescan, R Dietrich, A Wieszt, ...
IEEE Electron Device Letters 22 (2), 62-64, 2001
Room-temperature terahertz emission from nanometer field-effect transistors
N Dyakonova, A El Fatimy, J Lusakowskil, W Knap, MI Dyakonov, ...
2006 Joint 31st International Conference on Infrared Millimeter Waves and …, 2006
AlGaN/GaN high electron mobility transistors as a voltage-tunable room temperature terahertz sources
A El Fatimy, N Dyakonova, Y Meziani, T Otsuji, W Knap, S Vandenbrouk, ...
Journal of Applied Physics 107 (2), 2010
Terahertz detection by GaN/AlGaN transistors
A El Fatimy, SB Tombet, F Teppe, W Knap, DB Veksler, S Rumyantsev, ...
Electronics Letters 42 (23), 1342-1344, 2006
InAlAs/InGaAs metamorphic HEMT with high current density and high breakdown voltage
M Zaknoune, B Bonte, C Gaquiere, Y Cordier, Y Druelle, D Theron, ...
IEEE Electron Device Letters 19 (9), 345-347, 1998
A 17 GHz molecular rectifier
J Trasobares, D Vuillaume, D Theron, N Clement
Nature communications 7 (1), 12850, 2016
Trap effects studies in GaN MESFETs by pulsed measurements
S Trassaert, B Boudart, C Gaquiere, D Theron
Electron. Lett 35, 1386, 1999
Surface potential of n-and p-type GaN measured by Kelvin force microscopy
S Barbet, R Aubry, MA di Forte-Poisson, JC Jacquet, D Deresmes, T Melin, ...
Applied Physics Letters 93 (21), 2008
An interferometric scanning microwave microscope and calibration method for sub-fF microwave measurements
T Dargent, K Haddadi, T Lasri, N Clément, D Ducatteau, B Legrand, ...
Review of Scientific Instruments 84 (12), 2013
Cross-talk artefacts in Kelvin probe force microscopy imaging: a comprehensive study
S Barbet, M Popoff, H Diesinger, D Deresmes, D Theron, T Melin
Journal of Applied Physics 115 (14), 2014
AlGaN-GaN HEMTs on Si with power density performance of 1.9 W/mm at 10 GHz
A Minko, V Hoel, E Morvan, B Grimbert, A Soltani, E Delos, D Ducatteau, ...
IEEE Electron Device Letters 25 (7), 453-455, 2004
12 GHz GaN/AlN/AlGaN Nanowire MISFET
S Vandenbrouck, K Madjour, D Théron, Y Dong, Y Li, CM Lieber, ...
IEEE Electron Device Letters 30 (4), 322-324, 2009
The indium content in metamorphic InxAl1− xAs/InxGa1− xAs HEMTs on GaAs substrate: a new structure parameter
S Bollaert, Y Cordier, M Zaknoune, H Happy, V Hoel, S Lepilliet, D Théron, ...
Solid-State Electronics 44 (6), 1021-1027, 2000
Measurement techniques for RF nanoelectronic devices: new equipment to overcome the problems of impedance and scale mismatch
H Happy, K Haddadi, D Theron, T Lasri, G Dambrine
IEEE Microwave Magazine 15 (1), 30-39, 2014
Amplified piezoelectric transduction of nanoscale motion in gallium nitride electromechanical resonators
M Faucher, B Grimbert, Y Cordier, N Baron, A Wilk, H Lahreche, P Bove, ...
Applied Physics Letters 94 (23), 2009
Field effect transistors for terahertz detection and emission
W Knap, S Nadar, H Videlier, S Boubanga-Tombet, D Coquillat, ...
Journal of Infrared, Millimeter, and Terahertz Waves 32, 618-628, 2011
Comparison between TiAl and TiAlNiAu ohmic contacts to n-type GaN
B Boudart, S Trassaert, X Wallart, JC Pesant, O Yaradou, D Théron, ...
Journal of electronic materials 29, 603-606, 2000
Estimation of π–π electronic couplings from current measurements
J Trasobares, J Rech, T Jonckheere, T Martin, O Alévêque, E Levillain, ...
Nano letters 17 (5), 3215-3224, 2017
Note: Quantitative (artifact-free) surface potential measurements using Kelvin force microscopy
T Melin, S Barbet, H Diesinger, D Théron, D Deresmes
Review of scientific instruments 82 (3), 2011
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