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a.el fatimy
a.el fatimy
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Zitiert von
Jahr
Field effect transistors for terahertz detection: Physics and first imaging applications
W Knap, M Dyakonov, D Coquillat, F Teppe, N Dyakonova, J Łusakowski, ...
Journal of Infrared, Millimeter, and Terahertz Waves 30, 1319-1337, 2009
4522009
Resonant and voltage-tunable terahertz detection in InGaAs∕ InP nanometer transistors
A El Fatimy, F Teppe, N Dyakonova, W Knap, D Seliuta, G Valušis, ...
Applied physics letters 89 (13), 2006
2682006
AlGaN/GaN high electron mobility transistors as a voltage-tunable room temperature terahertz sources
A El Fatimy, N Dyakonova, Y Meziani, T Otsuji, W Knap, S Vandenbrouk, ...
Journal of Applied Physics 107 (2), 2010
1952010
Room-temperature terahertz emission from nanometer field-effect transistors
N Dyakonova, A El Fatimy, J Łusakowski, W Knap, MI Dyakonov, ...
Applied physics letters 88 (14), 2006
1942006
Terahertz detection by GaN/AlGaN transistors
A El Fatimy, SB Tombet, F Teppe, W Knap, DB Veksler, S Rumyantsev, ...
Electronics Letters 42 (23), 1342-1344, 2006
1382006
Epitaxial graphene quantum dots for high-performance terahertz bolometers
A El Fatimy, RL Myers-Ward, AK Boyd, KM Daniels, DK Gaskill, P Barbara
Nature nanotechnology 11 (4), 335-338, 2016
1362016
Room temperature tunable detection of subterahertz radiation by plasma waves in nanometer InGaAs transistors
F Teppe, M Orlov, A El Fatimy, A Tiberj, W Knap, J Torres, V Gavrilenko, ...
Applied Physics Letters 89 (22), 2006
932006
Terahertz imaging with GaAs field-effect transistors
A Lisauskas, W Von Spiegel, S Boubanga-Tombet, A El Fatimy, ...
Electronics Letters 44 (6), 1, 2008
832008
Broadband terahertz imaging of documents written with lead pencils
E Abraham, A Younus, A El Fatimy, JC Delagnes, E Nguéma, P Mounaix
Optics Communications 282 (15), 3104-3107, 2009
612009
Ballistic and pocket limitations of mobility in nanometer Si metal-oxide semiconductor field-effect transistors
J Łusakowski, W Knap, Y Meziani, JP Cesso, AE Fatimy, R Tauk, ...
Applied physics letters 87 (5), 2005
602005
Highly sensitive MoS2 photodetectors with graphene contacts
P Han, LS Marie, QX Wang, N Quirk, A El Fatimy, M Ishigami, P Barbara
Nanotechnology 29 (20), 20LT01, 2018
572018
Field effect transistors for terahertz detection and emission
W Knap, S Nadar, H Videlier, S Boubanga-Tombet, D Coquillat, ...
Journal of Infrared, Millimeter, and Terahertz Waves 32, 618-628, 2011
552011
Ambient Effects on Photogating in MoS2 Photodetectors
P Han, E Adler, Y Liu, LS Marie, AE Fatimy, S Melis, E Van Keuren, ...
https://iopscience.iop.org/article/10.1088/1361-6528/ab149e/meta, 2019
472019
Terahertz Emission from Collapsing Field Domains during Switching<? format?> of a Gallium Arsenide Bipolar Transistor
S Vainshtein, J Kostamovaara, V Yuferev, W Knap, A Fatimy, ...
Physical review letters 99 (17), 176601, 2007
452007
Ultra-broadband photodetectors based on epitaxial graphene quantum dots
A El Fatimy, A Nath, BD Kong, AK Boyd, RL Myers-Ward, KM Daniels, ...
Nanophotonics 7 (4), 735-740, 2018
432018
Plasma wave field effect transistor as a resonant detector for 1 terahertz imaging applications
A El Fatimy, JC Delagnes, A Younus, E Nguema, F Teppe, W Knap, ...
Optics Communications 282 (15), 3055-3058, 2009
402009
Phosphorene—an emerging two-dimensional material: recent advances in synthesis, functionalization, and applications
V Chaudhary, P Neugebauer, O Mounkachi, S Lahbabi, A El Fatimy
2D Materials 9 (3), 032001, 2022
362022
Broadening of the plasmon resonance due to plasmon-plasmon intermode scattering in terahertz high-electron-mobility transistors
VV Popov, OV Polischuk, W Knap, A El Fatimy
Applied Physics Letters 93 (26), 2008
362008
Electron mobility in quasi-ballistic Si MOSFETs
J Łusakowski, W Knap, Y Meziani, JP Cesso, A El Fatimy, R Tauk, ...
Solid-state electronics 50 (4), 632-636, 2006
312006
Graphene/Phosphorene nano-heterostructure as a potential anode material for (K/Na)-ion batteries: Insights from DFT and AIMD
Z Mansouri, A Sibari, A Al-Shami, S Lahbabi, A El Kenz, A Benyoussef, ...
Computational Materials Science 202, 110936, 2022
302022
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