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Gerhard Abstreiter
Gerhard Abstreiter
TU München, Walter Schottky Institut, Institute for Advanced Study
Bestätigte E-Mail-Adresse bei wsi.tum.de
Titel
Zitiert von
Zitiert von
Jahr
Optically programmable electron spin memory using semiconductor quantum dots
M Kroutvar, Y Ducommun, D Heiss, M Bichler, D Schuh, G Abstreiter, ...
Nature 432 (7013), 81-84, 2004
12552004
Coherent properties of a two-level system based on a quantum-dot photodiode
A Zrenner, E Beham, S Stufler, F Findeis, M Bichler, G Abstreiter
Nature 418 (6898), 612-614, 2002
10442002
How many-particle interactions develop after ultrafast excitation of an electron–hole plasma
R Huber, F Tauser, A Brodschelm, M Bichler, G Abstreiter, A Leitenstorfer
Nature 414 (6861), 286-289, 2001
8472001
Strain-Induced Two-Dimensional Electron Gas in Selectively Doped Superlattices
G Abstreiter, H Brugger, T Wolf, H Jorke, HJ Herzog
Physical review letters 54 (22), 2441, 1985
6551985
Sharp-line photoluminescence and two-photon absorption of zero-dimensional biexcitons in a GaAs/AlGaAs structure
K Brunner, G Abstreiter, G Böhm, G Tränkle, G Weimann
Physical review letters 73 (8), 1138, 1994
6341994
Structural and optical properties of high quality zinc-blende/wurtzite GaAs nanowire heterostructures
D Spirkoska, J Arbiol, A Gustafsson, S Conesa-Boj, F Glas, I Zardo, ...
Physical Review B—Condensed Matter and Materials Physics 80 (24), 245325, 2009
5862009
Ga-assisted catalyst-free growth mechanism of GaAs nanowires by molecular beam epitaxy
C Colombo, D Spirkoska, M Frimmer, G Abstreiter, A Fontcuberta i Morral
Physical Review B—Condensed Matter and Materials Physics 77 (15), 155326, 2008
5292008
Condensation of indirect excitons in coupled AlAs/GaAs quantum wells
LV Butov, A Zrenner, G Abstreiter, G Böhm, G Weimann
Physical review letters 73 (2), 304, 1994
5061994
Direct observation of controlled coupling in an individual quantum dot molecule
HJ Krenner, M Sabathil, EC Clark, A Kress, D Schuh, M Bichler, ...
Physical Review Letters 94 (5), 057402, 2005
4832005
Photoluminescence from a single GaAs/AlGaAs quantum dot
K Brunner, U Bockelmann, G Abstreiter, M Walther, G Böhm, G Tränkle, ...
Physical review letters 69 (22), 3216, 1992
4511992
Light scattering by free carrier excitations in semiconductors
G Abstreiter, M Cardona, A Pinczuk
Light Scattering in Solids IV: Electronics Scattering, Spin Effects, SERS …, 2005
4362005
Quantum dots formed by interface fluctuations in AlAs/GaAs coupled quantum well structures
A Zrenner, LV Butov, M Hagn, G Abstreiter, G Böhm, G Weimann
Physical review letters 72 (21), 3382, 1994
4091994
Coupled quantum dots fabricated by cleaved edge overgrowth: From artificial atoms to molecules
G Schedelbeck, W Wegscheider, M Bichler, G Abstreiter
Science 278 (5344), 1792-1795, 1997
3991997
Nucleation mechanism of gallium-assisted molecular beam epitaxy growth of gallium arsenide nanowires
A Fontcuberta i Morral, C Colombo, G Abstreiter, J Arbiol, JR Morante
Applied Physics Letters 92 (6), 2008
3532008
Intersubband relaxation in GaAs-Al x Ga 1− x As quantum well structures observed directly by an infrared bleaching technique
A Seilmeier, HJ Hübner, G Abstreiter, G Weimann, W Schlapp
Physical review letters 59 (12), 1345, 1987
3461987
Raman spectroscopy of wurtzite and zinc-blende GaAs nanowires: polarization dependence, selection rules, and strain effects
I Zardo, S Conesa-Boj, F Peiro, JR Morante, J Arbiol, E Uccelli, ...
Physical Review B—Condensed Matter and Materials Physics 80 (24), 245324, 2009
2972009
Determination of existing stress in silicon films on sapphire substrate using Raman spectroscopy
T Englert, G Abstreiter, J Pontcharra
Solid-State Electronics 23 (1), 31-33, 1980
2941980
Lasing from individual GaAs-AlGaAs core-shell nanowires up to room temperature
B Mayer, D Rudolph, J Schnell, S Morkötter, J Winnerl, J Treu, K Müller, ...
Nature communications 4 (1), 2931, 2013
2812013
Growth and characterization of self-assembled Ge-rich islands on Si
G Abstreiter, P Schittenhelm, C Engel, E Silveira, A Zrenner, D Meertens, ...
Semiconductor Science and Technology 11 (11S), 1521, 1996
2781996
Raman spectroscopy—A versatile tool for characterization of thin films and heterostructures of GaAs and AlxGa1−xAs
G Abstreiter, E Bauser, A Fischer, K Ploog
Applied physics 16, 345-352, 1978
2761978
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