Christophe Gaquiere
Christophe Gaquiere
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Zitiert von
Zitiert von
Can InAlN/GaN be an alternative to high power/high temperature AlGaN/GaN devices?
F Medjdoub, JF Carlin, M Gonschorek, E Feltin, MA Py, D Ducatteau, ...
2006 International Electron Devices Meeting, 1-4, 2006
Current instabilities in GaN-based devices
I Daumiller, D Theron, C Gaquiere, A Vescan, R Dietrich, A Wieszt, ...
IEEE Electron Device Letters 22 (2), 62-64, 2001
AlGaN/GaN high electron mobility transistors as a voltage-tunable room temperature terahertz sources
A El Fatimy, N Dyakonova, Y Meziani, T Otsuji, W Knap, S Vandenbrouk, ...
Journal of Applied Physics 107 (2), 2010
Room-temperature terahertz emission from nanometer field-effect transistors
N Dyakonova, A El Fatimy, J Łusakowski, W Knap, MI Dyakonov, ...
Applied physics letters 88 (14), 2006
Testing the temperature limits of GaN-based HEMT devices
D Maier, M Alomari, N Grandjean, JF Carlin, MA Diforte-Poisson, C Dua, ...
IEEE Transactions on device and materials reliability 10 (4), 427-436, 2010
Output power density of 5.1/mm at 18 GHz with an AlGaN/GaN HEMT on Si substrate
D Ducatteau, A Minko, V Hoel, E Morvan, E Delos, B Grimbert, ...
IEEE Electron Device Letters 27 (1), 7-9, 2005
AlInN/AlN/GaN HEMT technology on SiC with 10-W/mm and 50% PAE at 10 GHz
N Sarazin, E Morvan, MA di Forte Poisson, M Oualli, C Gaquiere, O Jardel, ...
IEEE Electron Device Letters 31 (1), 11-13, 2009
Terahertz detection by GaN/AlGaN transistors
A El Fatimy, SB Tombet, F Teppe, W Knap, DB Veksler, S Rumyantsev, ...
Electronics Letters 42 (23), 1342-1344, 2006
InAlAs/InGaAs metamorphic HEMT with high current density and high breakdown voltage
M Zaknoune, B Bonte, C Gaquiere, Y Cordier, Y Druelle, D Theron, ...
IEEE Electron Device Letters 19 (9), 345-347, 1998
Status of the emerging InAlN/GaN power HEMT technology
F Medjdoub, JF Carlin, C Gaquière, N Grandjean, E Kohn
The Open Electrical & Electronic Engineering Journal 2 (1), 2008
Trap effects studies in GaN MESFETs by pulsed measurements
S Trassaert, B Boudart, C Gaquière, D Théron, Y Crosnier, F Huet, ...
Electronics Letters 35 (16), 1386-1388, 1999
A conventional double-polysilicon FSA-SEG Si/SiGe:C HBT reaching 400 GHz fMAX
P Chevalier, F Pourchon, T Lacave, G Avenier, Y Campidelli, L Depoyan, ...
2009 IEEE Bipolar/BiCMOS Circuits and Technology Meeting, 1-4, 2009
AlGaN/GaN HEMT on (111) single crystalline diamond
M Alomari, A Dussaigne, D Martin, N Grandjean, C Gaquiere, E Kohn
Electronics letters 46 (4), 1, 2010
InAlN/GaN MOSHEMT with self-aligned thermally generated oxide recess
M Alomari, F Medjdoub, JF Carlin, E Feltin, N Grandjean, A Chuvilin, ...
IEEE electron device letters 30 (11), 1131-1133, 2009
Investigation of the thermal boundary resistance at the III-nitride/substrate interface using optical methods
J Kuzmik, S Bychikhin, D Pogany, C Gaquière, E Pichonat, E Morvan
Journal of Applied Physics 101 (5), 2007
Electrical characterization of (Ni/Au)/Al0. 25Ga0. 75N/GaN/SiC Schottky barrier diode
S Saadaoui, M Mongi Ben Salem, M Gassoumi, H Maaref, C Gaquière
Journal of Applied Physics 110 (1), 2011
Characteristics of Al2O3/AlInN/GaN MOSHEMT
F Medjdoub, N Sarazin, M Tordjman, M Magis, MA di Forte-Poisson, ...
Electronics letters 43 (12), 691-692, 2007
Diamond overgrown InAlN/GaN HEMT
M Alomari, M Dipalo, S Rossi, MA Diforte-Poisson, S Delage, JF Carlin, ...
Diamond and Related Materials 20 (4), 604-608, 2011
Ultrathin InAlN/AlN barrier HEMT with high performance in normally off operation
C Ostermaier, G Pozzovivo, JFÇ Carlin, B Basnar, W Schrenk, Y Douvry, ...
IEEE Electron Device Letters 30 (10), 1030-1032, 2009
Experimental demonstration of direct terahertz detection at room-temperature in AlGaN/GaN asymmetric nanochannels
P Sangaré, G Ducournau, B Grimbert, V Brandli, M Faucher, C Gaquière, ...
Journal of Applied Physics 113 (3), 2013
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