Pecz B
Pecz B
Energy Research Centre, MFA, Thin Film Physics
Bestätigte E-Mail-Adresse bei
Zitiert von
Zitiert von
The real structure of ε-Ga 2 O 3 and its relation to κ-phase
I Cora, F Mezzadri, F Boschi, M Bosi, M Čaplovičová, G Calestani, ...
CrystEngComm 19 (11), 1509-1516, 2017
Amorphisation and surface morphology development at low-energy ion milling
A Barna, B Pécz, M Menyhard
Ultramicroscopy 70 (3), 161-171, 1998
Nickel based ohmic contacts on SiC
T Marinova, A Kakanakova-Georgieva, V Krastev, R Kakanakov, ...
Materials Science and Engineering: B 46 (1-3), 223-226, 1997
Tracks induced by swift heavy ions in semiconductors
G Szenes, ZE Horvath, B Pecz, F Paszti, L Toth
Physical Review B 65 (4), 045206, 2002
Realization of vertical and zigzag single crystalline silicon nanowire architectures
VA Sivakov, G Bronstrup, B Pecz, A Berger, GZ Radnoczi, M Krause, ...
The Journal of Physical Chemistry C 114 (9), 3798-3803, 2010
TEM sample preparation by ion milling/amorphization
A Barna, B Pécz, M Menyhard
Micron 30 (3), 267-276, 1999
Control of the in-plane thermal conductivity of ultra-thin nanocrystalline diamond films through the grain and grain boundary properties
J Anaya, S Rossi, M Alomari, E Kohn, L Tóth, B Pécz, KD Hobart, ...
Acta Materialia 103, 141-152, 2016
Thermal stability of ε-Ga2O3 polymorph
R Fornari, M Pavesi, V Montedoro, D Klimm, F Mezzadri, I Cora, B Pécz, ...
Acta Materialia 140, 411-416, 2017
Micro epitaxial lateral overgrowth of GaN/sapphire by metal organic vapour phase epitaxy
E Frayssinet, B Beaumont, JP Faurie, P Gibart, Z Makkai, B Pécz, ...
MRS Internet Journal of Nitride Semiconductor Research 7, 1-7, 2002
Crystallization of amorphous-Si films by flash lamp annealing
B Pécz, L Dobos, D Panknin, W Skorupa, C Lioutas, N Vouroutzis
Applied Surface Science 242 (1-2), 185-191, 2005
Contact formation in SiC devices
B Pécz
Applied Surface Science 184 (1-4), 287-294, 2001
Diamond overgrown InAlN/GaN HEMT
M Alomari, M Dipalo, S Rossi, MA Diforte-Poisson, S Delage, JF Carlin, ...
Diamond and Related Materials 20 (4), 604-608, 2011
Ti3SiC2 formed in annealed Al/Ti contacts to p-type SiC
B Pécz, L Tóth, MA di Forte-Poisson, J Vacas
Applied Surface Science 206 (1-4), 8-11, 2003
Structure of sputtered nanocomposite CrCx∕ aC: H thin films
G Gassner, J Patscheider, PH Mayrhofer, E Hegedus, L Toth, I Kovacs, ...
Journal of Vacuum Science & Technology B: Microelectronics and Nanometer …, 2006
Characterization of ZnO: Al/Au/ZnO: Al trilayers for high performance transparent conducting electrodes
T Dimopoulos, GZ Radnoczi, B Pécz, H Brückl
Thin Solid Films 519 (4), 1470-1474, 2010
In situ TEM study of κ→ β and κ→ γ phase transformations in Ga2O3
I Cora, Z Fogarassy, R Fornari, M Bosi, A Rečnik, B Pécz
Acta Materialia 183, 216-227, 2020
Epitaxial lateral overgrowth of GaN on Si (111)
E Feltin, B Beaumont, P Vennéguès, M Vaille, P Gibart, T Riemann, ...
Journal of Applied Physics 93 (1), 182-185, 2003
Early stages of growth of β-SiC on Si by MBE
K Zekentes, V Papaioannou, B Pecz, J Stoemenos
Journal of Crystal growth 157 (1-4), 392-399, 1995
Diamond-graphene composite nanostructures
P Németh, K McColl, RL Smith, M Murri, LAJ Garvie, M Alvaro, B Pécz, ...
Nano Letters 20 (5), 3611-3619, 2020
Catalytic probe of the surface statistics of palladium crystallites deposited on montmorillonite
B Veisz, Z Király, L Tóth, B Pécz
Chemistry of materials 14 (7), 2882-2888, 2002
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