Arnaud Wilk
Arnaud Wilk
Nokia-Bell Labs
Bestätigte E-Mail-Adresse bei
Zitiert von
Zitiert von
Amplified piezoelectric transduction of nanoscale motion in gallium nitride electromechanical resonators
M Faucher, B Grimbert, Y Cordier, N Baron, A Wilk, H Lahreche, P Bove, ...
Applied Physics Letters 94 (23), 2009
Type-II InAsSb/InAs strained quantum-well laser diodes emitting at 3.5 μm
A Wilk, M El Gazouli, M El Skouri, P Christol, P Grech, AN Baranov, ...
Applied Physics Letters 77 (15), 2298-2300, 2000
GaInSb/AlGaAsSb strained quantum well semiconductor lasers for 1.55 m operation
G Almuneau, F Genty, A Wilk, P Grech, A Joullié, L Chusseau
Semiconductor science and technology 14 (1), 89, 1999
High-power 1.3 μm InAs/GaInAs/GaAs QD lasers grown in a multiwafer MBE production system
A Wilk, AR Kovsh, SS Mikhrin, C Chaix, II Novikov, MV Maximov, ...
Journal of crystal growth 278 (1-4), 335-341, 2005
Growth and characterization of vertical cavity structures on InP with GaAsSb/AlAsSb Bragg mirrors for 1.55 μm emission
F Genty, G Almuneau, L Chusseau, A Wilk, S Gaillard, G Boissier, P Grech, ...
Journal of crystal growth 201, 1024-1027, 1999
InAs (PSb)-based “W” quantum well laser diodes emitting near 3.3 μm
A Joullié, EM Skouri, M Garcia, P Grech, A Wilk, P Christol, AN Baranov, ...
Applied Physics Letters 76 (18), 2499-2501, 2000
MBE growth of InAs/InAsSb/AlAsSb structures for mid-infrared lasers
A Wilk, F Genty, B Fraisse, G Boissier, P Grech, M El Gazouli, P Christol, ...
Journal of crystal growth 223 (3), 341-348, 2001
InAs/InAs (P, Sb) quantum-well laser structure for the midwavelength infrared region
P Christol, P Bigenwald, A Wilk, A Joullie, O Gilard, H Carrere, ...
IEE Proceedings-Optoelectronics 147 (3), 181-187, 2000
Continuous-wave operation of GaInAsSb-GaSb type-II quantum-well ridge-lasers
A Joullié, G Glastre, R Blondeau, JC Nicolas, Y Cuminal, AN Baranov, ...
IEEE Journal of selected topics in quantum electronics 5 (3), 711-714, 1999
Broadly and finely tunable hybrid silicon laser with nanosecond-scale switching speed
B Stern, K Kim, C Calò, C Fortin, D Lanteri, K Mekhazni, JG Provost, ...
Optics Letters 45 (22), 6198-6201, 2020
First microwave power performance of AlGaN/GaN HEMTs on SopSiC composite substrate
V Hoel, N Defrance, JC De Jaeger, H Gerard, C Gaquiere, H Lahreche, ...
Electronics Letters 44 (3), 238-239, 2008
Recent achievements in SopSiC substrates for high power and high frequency applications
R Langer, B Faure, A Boussagol, P Bove, H Lahreche, A Wilk, J Thuret, ...
CS Mantech Conference, 24-27, 2006
MBE growth of InAs/InAsSb/InAlAsSb “W” quantum well laser diodes emitting near 3 μm
A Wilk, B Fraisse, P Christol, G Boissier, P Grech, M El Gazouli, ...
Journal of crystal growth 227, 586-590, 2001
CBr4 and Be heavily doped InGaAs grown in a production MBE system
S Godey, S Dhellemmes, A Wilk, M Zaknoune, F Mollot
Journal of crystal growth 278 (1-4), 600-603, 2005
Low-κ, narrow linewidth III-V-on-SOI distributed feedback lasers with backside sampled Bragg gratings
JM Ramirez, A Souleiman, PF de la Horie, D Neel, N Vaissiere, V Ramez, ...
Optics Express 30 (20), 36717-36726, 2022
Growth of Be-doped GaInP/GaAs heterostructure bipolar transistor by all solid-source multiwafer production molecular beam epitaxy
A Wilk, M Zaknoune, S Godey, S Dhellemmes, P Gerard, C Chaix, ...
Journal of Vacuum Science & Technology B: Microelectronics and Nanometer …, 2004
Recent achievement in the AlGaN/GaN HEMT epitaxy on silicon and engineering substrates exhibiting improved performances
H Lahreche, A Wilk, P Bove, M Lijadi, R Langer, J Thuret, JC De Jaeger, ...
Proceedings of the 31th Workshop on Compound Semiconductor Devices and …, 2007
As–P interface-sensitive GaInP/GaAs structures grown in a production MBE system
S Dhellemmes, S Godey, A Wilk, X Wallart, F Mollot, RIPT Lab
Journal of crystal growth 278 (1-4), 564-568, 2005
Reflective Electroabsorption Modulators for Beyond 25 Gb/s Colorless Transmissions
K Atra, G Cerulo, JG Provost, K Mekhazni, C Calo, F Pommereau, ...
Journal of Lightwave Technology 39 (15), 5035-5041, 2021
Novel technology of III-V die-bonded SOI photonic integrated circuits
D Néel, A Shen, PF de La Horie, N Vaissière, A Wilk, V Muffato, ...
Emerging Applications in Silicon Photonics II 11880, 35-45, 2021
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