Malcolm Carroll
Malcolm Carroll
International Business Machines
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Zitiert von
Zitiert von
Electron spin decoherence in isotope-enriched silicon
WM Witzel, MS Carroll, A Morello, Ł Cywiński, SD Sarma
Physical review letters 105 (18), 187602, 2010
Semiconductor devices with reduced active region defects and unique contacting schemes
JD Bude, M Carroll, CA King
US Patent 7,012,314, 2006
High-fidelity single-shot readout for a spin qubit via an enhanced latching mechanism
P Harvey-Collard, B D’Anjou, M Rudolph, NT Jacobson, J Dominguez, ...
Physical Review X 8 (2), 021046, 2018
Coherent coupling between a quantum dot and a donor in silicon
P Harvey-Collard, NT Jacobson, M Rudolph, J Dominguez, GA Ten Eyck, ...
Nature communications 8 (1), 1029, 2017
A silicon metal-oxide-semiconductor electron spin-orbit qubit
RM Jock, NT Jacobson, P Harvey-Collard, AM Mounce, V Srinivasa, ...
Nature communications 9 (1), 1768, 2018
Observation of percolation-induced two-dimensional metal-insulator transition in a Si MOSFET
LA Tracy, EH Hwang, K Eng, GA Ten Eyck, EP Nordberg, K Childs, ...
Physical Review B 79 (23), 235307, 2009
Quantum decoherence of the central spin in a sparse system of dipolar coupled spins
WM Witzel, MS Carroll, Ł Cywiński, SD Sarma
Physical Review B 86 (3), 035452, 2012
Enhancement-mode double-top-gated metal-oxide-semiconductor nanostructures with tunable lateral geometry
EP Nordberg, GA Ten Eyck, HL Stalford, RP Muller, RW Young, K Eng, ...
Physical Review B 80 (11), 115331, 2009
Semiconductor devices with reduced active region defects and unique contacting schemes
JD Bude, M Carroll, CA King
US Patent 7,297,569, 2007
Valley splitting of single-electron Si MOS quantum dots
JK Gamble, P Harvey-Collard, NT Jacobson, AD Baczewski, E Nielsen, ...
Applied Physics Letters 109 (25), 2016
25-nm p-channel vertical MOSFETs with SiGeC source-drains
M Yang, CL Chang, M Carroll, JC Sturm
IEEE Electron Device Letters 20 (6), 301-303, 1999
Single shot spin readout using a cryogenic high-electron-mobility transistor amplifier at sub-Kelvin temperatures
LA Tracy, DR Luhman, SM Carr, NC Bishop, GA Ten Eyck, T Pluym, ...
Applied Physics Letters 108 (6), 2016
Accurate modelling of average phosphorus diffusivities in germanium after long thermal anneals: evidence of implant damage enhanced diffusivities
MS Carroll, R Koudelka
Semiconductor science and technology 22 (1), S164, 2006
Quantum computer aided design simulation and optimization of semiconductor quantum dots
X Gao, E Nielsen, RP Muller, RW Young, AG Salinger, NC Bishop, ...
Journal of Applied Physics 114 (16), 2013
Implications of simultaneous requirements for low-noise exchange gates in double quantum dots
E Nielsen, RW Young, RP Muller, MS Carroll
Physical Review B 82 (7), 075319, 2010
Spin-orbit interactions for singlet-triplet qubits in silicon
P Harvey-Collard, NT Jacobson, C Bureau-Oxton, RM Jock, V Srinivasa, ...
Physical review letters 122 (21), 217702, 2019
Cryogenic preamplification of a single-electron-transistor using a silicon-germanium heterojunction-bipolar-transistor
MJ Curry, TD England, NC Bishop, G Ten-Eyck, JR Wendt, T Pluym, ...
Applied Physics Letters 106 (20), 2015
Complete suppression of boron transient-enhanced diffusion and oxidation-enhanced diffusion in silicon using localized substitutional carbon incorporation
MS Carroll, CL Chang, JC Sturm, T Büyüklimanli
Applied Physics Letters 73 (25), 3695-3697, 1998
Efficient clocked electron transfer on superfluid helium
FR Bradbury, M Takita, TM Gurrieri, KJ Wilkel, K Eng, MS Carroll, SA Lyon
Physical review letters 107 (26), 266803, 2011
Charge sensing in enhancement mode double-top-gated metal-oxide-semiconductor quantum dots
EP Nordberg, HL Stalford, R Young, GA Ten Eyck, K Eng, LA Tracy, ...
Applied Physics Letters 95 (20), 2009
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