Fahd A. Mohiyaddin
Fahd A. Mohiyaddin
Research Scientist, Intel
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Zitiert von
Zitiert von
Spin-valley lifetimes in a silicon quantum dot with tunable valley splitting
CH Yang, A Rossi, R Ruskov, NS Lai, FA Mohiyaddin, S Lee, C Tahan, ...
Nature Communications 4, 2069, 2013
Silicon quantum processor with robust long-distance qubit couplings
G Tosi, FA Mohiyaddin, SB Tenberg, R Rahman, G Klimeck, A Morello
Nature Communications 8 (450), 2017
Electrically controlling single-spin qubits in a continuous microwave field
A Laucht, JT Muhonen, FA Mohiyaddin, R Kalra, JP Dehollain, S Freer, ...
Science advances 1 (3), e1500022, 2015
A Dressed Spin Qubit in Silicon
A Laucht, R Kalra, S Simmons, JP Dehollain, JT Muhonen, ...
Nature Nanotechnology 12 (61-66), 2017
Quantum Computing Circuits and Devices
TS Humble, H Thapliyal, E Munoz-Coreas, FA Mohiyaddin, RS Bennink
IEEE Design & Test 36 (3), 2019
Investigation of Microwave Loss Induced by Oxide Regrowth in High-Q Niobium Resonators
J Verjauw, A Potočnik, M Mongillo, R Acharya, F Mohiyaddin, G Simion, ...
Physical Review Applied 16 (1), 014018, 2021
Coherent control of a single si 29 nuclear spin qubit
JJ Pla, FA Mohiyaddin, KY Tan, JP Dehollain, R Rahman, G Klimeck, ...
Physical review letters 113 (24), 246801, 2014
Strain-induced spin resonance shifts in silicon devices
JJ Pla, A Bienfait, G Pica, J Mansir, FA Mohiyaddin, Z Z, N YM, A Morello, ...
Physical Review Applied 9, 044014, 2018
Noninvasive spatial metrology of single-atom devices
FA Mohiyaddin, R Rahman, R Kalra, G Klimeck, LCL Hollenberg, JJ Pla, ...
Nano letters 13 (5), 1903-1909, 2013
A single-atom quantum memory in silicon
S Freer, S Simmons, A Laucht, JT Muhonen, JP Dehollain, R Kalra, ...
Quantum Science and Technology 2 (1), 2017
Circuit-quantum electrodynamics with direct magnetic coupling to single-atom spin qubits in isotopically enriched 28Si
Guilherme Tosi, Fahd A. Mohiyaddin, Hans Huebl, Andrea Morello
AIP Advances 4 (8), 087122, 2014
Quantum processing apparatus and a method of operating a quantum processing apparatus
A Morello, G Tosi, FA Mohiyaddin
US Patent 10,528,884, 2020
High-fidelity adiabatic inversion of a 31P electron spin qubit in natural silicon
A Laucht, R Kalra, JT Muhonen, JP Dehollain, FA Mohiyaddin, F Hudson, ...
Applied Physics Letters 104 (9), 2014
Exchange coupling in a linear chain of three quantum-dot spin qubits in silicon
KW Chan, H Sahasrabudhe, W Huang, Y Wang, HC Yang, M Veldhorst, ...
Nano Letters 21 (3), 1517-1522, 2021
Quantum Accelerators for High-Performance Computing Systems
KA Britt, FA Mohiyaddin, TS Humble
IEEE International Conference on Rebooting Computing, 2017
Path toward manufacturable superconducting qubits with relaxation times exceeding 0.1 ms
J Verjauw, R Acharya, J Van Damme, T Ivanov, DP Lozano, ...
npj Quantum Information 8 (1), 93, 2022
A flexible 300 mm integrated Si MOS platform for electron-and hole-spin qubits exploration
R Li, NID Stuyck, S Kubicek, J Jussot, BT Chan, FA Mohiyaddin, ...
2020 IEEE International Electron Devices Meeting (IEDM), 38.3. 1-38.3. 4, 2020
Transport of spin qubits with donor chains under realistic experimental conditions
FA Mohiyaddin, R Kalra, A Laucht, R Rahman, G Klimeck, A Morello
Physical Review B 94 (4), 045314, 2016
Millikelvin temperature cryo-CMOS multiplexer for scalable quantum device characterisation
A Potočnik, S Brebels, J Verjauw, R Acharya, A Grill, D Wan, M Mongillo, ...
Quantum Science and Technology 7 (1), 015004, 2021
Multiphysics simulation & design of silicon quantum dot qubit devices
FA Mohiyaddin, G Simion, NID Stuyck, R Li, F Ciubotaru, G Eneman, ...
2019 IEEE International Electron Devices Meeting (IEDM), 39.5. 1-39.5. 4, 2019
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